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IXTH20N60 MegaMOS FET
型号:   IXTH20N60
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描述:   MegaMOS FET
文件大小 :   108 K    4 页
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品牌   IXYS [ IXYS CORPORATION ]
购买 :   
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100%
MegaMOS
TM
FET
IXTH 20N60
IXTM 20N60
V
DSS
= 600 V
= 20 A
I
D25
R
DS(on)
= 0.35
N-Channel Enhancement Mode
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
15N60
20N60
15N60
20N60
Maximum Ratings
600
600
±20
±30
15
20
60
80
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-247 AD (IXTH)
D (TAB)
TO-204 AE (IXTM)
D
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
I
GSS
I
DSS
R
DS(on)
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
±100
200
1
0.35
nA
µA
mA
l
l
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
l
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
l
V
GS(th)
2
4.5
V
l
V
DS
= V
GS
, I
D
= 250
µA
l
V
DSS
V
GS
= 0 V, I
D
= 250
µA
600
V
l
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Applications
Switch-mode and resonant-mode
power supplies
Motor control
Uninterruptible Power Supplies (UPS)
DC choppers
l
l
l
l
91537E(5/96)
1-4
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