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IXTP5N50P PolarHV Power MOSFET - N-Channel Enhancement Mode
型号:   IXTP5N50P
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描述:   PolarHV Power MOSFET - N-Channel Enhancement Mode
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品牌   IXYS [ IXYS CORPORATION ]
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Advance Technical Information
PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
IXTA 5N50P
IXTP 5N50P
IXTY 5N50P
V
DSS
= 500 V
= 4.8 A
I
D25
R
DS(on)
1.4
Ω
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/μs, V
DD
V
DSS
,
T
J
150°C, R
G
= 20
Ω
T
C
= 25°C
Maximum Ratings
500
500
±
30
±
40
4.8
10
5
20
250
10
89
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
°C
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
G
D S
(TAB)
TO-252 (IXTY)
G
S
(TAB)
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque
TO-220
TO-263
TO-252
(TO-220)
300
260
M
d
Weight
1.13/10 Nm/lb.in.
4
3
0.8
g
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 50μA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.0
±100
5
50
1.4
V
V
nA
μA
μA
Ω
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
μs,
duty cycle d
2 %
© 2005 IXYS All rights reserved
DS99446(08/05)
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