电子元器件数据表 IC PDF查询
English 中文版
  品牌   我要上传
型号:  
描述:
LC5512MV-45FN672C  OS103012MU2QP1  TLE2062MUB  LC5512MV-45FN208C  S72MS01GPF0HF04V2  S72MS01GPF0HF04V0  LC5512MV-45FN208I  L202112MS02B  LC5512MV-45FN672I  TLE2142MUB  
IXFN36N100 HiPerFET Power MOSFETs Single Die MOSFET
型号:   IXFN36N100
PDF文件: 下载PDF文件   鼠标右键选目标另存为
网页直接浏览   不需安装PDF阅读软件
在线打开PDF文件   需安装PDF阅读软件
描述:   HiPerFET Power MOSFETs Single Die MOSFET
文件大小 :   124 K    4 页
Logo:   
品牌   IXYS [ IXYS CORPORATION ]
购买 :   
  浏览型号IXFN36N100的Datasheet PDF文件第2页 浏览型号IXFN36N100的Datasheet PDF文件第3页 浏览型号IXFN36N100的Datasheet PDF文件第4页  
100%
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz, RMS
I
ISOL
1 mA
t = 1 min
t=1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C, Chip capability
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2
T
C
= 25°C
IXFN 36N100
V
DSS
I
D25
R
DS(on)
= 1000V
=
36A
= 0.24Ω
D
G
S
S
Maximum Ratings
1000
1000
±20
±30
36
144
36
64
4
5
700
-55 ... +150
150
-55 ... +150
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard packages
miniBLOC, with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Fast intrinsic Rectifier
Applications
DC-DC converters
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
5.0
±200
T
J
= 25°C
T
J
= 125°C
100
2
0.24
V
V
nA
µA
mA
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
Advantages
Easy to mount
Space savings
High power density
© 2001 IXYS All rights reserved
98520C (02/01)
首页 - - 友情链接
Copyright© 2001 - 2014 ICPDF All Rights Reserved ICPDF.COM

粤公网安备 44030402000629号


粤ICP备13051289号-7