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1N5809 ULTRAFAST RECOVERY RECTIFIER DIODES
型号:   1N5809
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描述:   ULTRAFAST RECOVERY RECTIFIER DIODES
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  浏览型号1N5809的Datasheet PDF文件第2页  
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Certificate
:
TH97/10561QM
Certificate :
TW00/17276EM
1N5807 - 1N5811
PRV : 50 - 150 Volts
Io : 6.0 Amperes
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ultrafast recovery time
Pb / RoHS Free
ULTRAFAST RECOVERY
RECTIFIER DIODES
D2A
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100µA
Maximum Average Forward Current
Maximum Forward Surge Current
(3)
Maximum Peak Forward Voltage at I
F
= 4.0 A.
Maximum Reverse Current at V
RWM
Maximum Reverse Recovery Time
(4)
Thermal Resistance, Junction to Lead
Junction Temperature Range
Storage Temperature Range
Ta = 25 °C
Ta = 100 °C
SYMBOL
V
RWM
V
BR(Min)
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Trr
R
ӨJL
T
J
T
STG
1N5807
50
60
1N5809
100
110
6.0
(1)
3.0
(2)
125
0.875
5.0
150
30
22
- 65 to + 175
- 65 to + 175
1N5811
150
160
UNIT
V
V
A
A
V
μA
ns
°C/W
°C
°C
Notes :
(1) Rated at T
L
=75
°C
at 3/8 inc lead length. Derate at 60 mA/°C for T
L
above 75
°C.
(2) Derate linearly at 25 mA/°C above Ta = 55 °C. This rating is typical for PC boards where thermal resistance from mounting
point to ambient is sufficiently controlled where T
J(max)
dose not exceed 175 °C.
(3) Ta = 25 °C @ I
F(AV)
= 3A and V
RWM
for ten 8.3 ms surges at 1 minute intervals.
(4) I
F
= 1A, I
RM
= 1A, I
R(REC)
= 0.1 A and di/dt = 10 A/μs min.
Page 1 of 2
Rev. 00 : April 4, 2007
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