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1N6263 SCHOTTKY BARRIER DIODES
型号:   1N6263
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描述:   SCHOTTKY BARRIER DIODES
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品牌   EIC [ EIC DISCRETE SEMICONDUCTORS ]
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1N5711 and 1N6263
V
RRM
: 70V , 60V
FEATURES :
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices, steering, biasing and coupling diodes for
fast switching and low logic level applications.
• This diode is also available in the MiniMELF case with
type designation LL5711 and LL6263.
• Pb / RoHS Free
SCHOTTKY BARRIER DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
0.020 (0.52)max.
1.00 (25.4)
min.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Repetitive Peak Reverse Voltage
Power Dissipation (Infinite Heatsink)
Maximum Single Cycle Surge 10
µs
Square Wave
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
1N5711
1N6263
25
°
C ambient temperature unless otherwise specified.
Symbol
V
RRM
P
D
I
FSM
R
θ
JA
T
J
T
S
Value
70
60
400
(1)
2
0.3
(1)
125
(1)
(1)
Unit
V
mW
A
°C/mW
°C
°C
-55 to + 150
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Reverse Current
Forward Voltage Drop
Diode Capacitance
Reverse Recovery Time
Note:
(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature..
Symbol
1N5711
1N6263
V
(BR)R
I
R
V
F
1N5711
1N6263
Cd
Trr
Test Condition
I
R
= 10
µA
V
R
= 50 V
I
F
= 1mA
I
F
= 15mA
V
R
= 0 V, f = 1MHz
I
F
= I
R
= 5mA,
recover to 0.1I
R
Min
70
60
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
-
-
200
0.41
1.0
2.0
2.2
1
Unit
V
nA
V
pF
ns
Page 1 of 2
Rev. 02 : March 24, 2005
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