电子元器件数据表 IC PDF查询
English 中文版
  品牌   我要上传
型号:  
描述:
IXTY01N100 High Voltage MOSFET N-Channel, Enhancement Mode
型号:   IXTY01N100
PDF文件: 下载PDF文件   鼠标右键选目标另存为
网页直接浏览   不需安装PDF阅读软件
在线打开PDF文件   需安装PDF阅读软件
描述:   High Voltage MOSFET N-Channel, Enhancement Mode
文件大小 :   67 K    2 页
Logo:   
品牌   IXYS [ IXYS CORPORATION ]
购买 :   
  浏览型号IXTY01N100的Datasheet PDF文件第2页  
100%
High Voltage MOSFET
N-Channel, Enhancement Mode
IXTU 01N100
IXTY 01N100
V
DSS
I
D25
R
DS(on)
= 1000 V
= 100mA
= 80
Symbol
Test Conditions
Maximum Ratings
01N100
1000
1000
±20
±30
100
400
25
-55 ... +150
150
-55 ... +150
V
V
TO-251 AA
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
T
L
Weight
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C; T
J
= 25°C to 150°C
T
C
= 25°C, pulse width limited by max. T
J
T
C
= 25°C
G
V
V
mA
mA
W
°C
°C
°C
°C
g
D
S
D (TAB)
TO-252 AA
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
1.6 mm (0.063 in) from case for 5 s
300
0.8
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2
4.5
±50
T
J
= 25°C
T
J
= 125°C
60
10
200
80
V
V
V
nA
µA
µA
Features
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 25
µA
V
DS
= V
GS
, I
D
= 25
µA
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
International standard packages
JEDEC TO-251 AA, TO-252 AA
l
Low R
DS (on)
HDMOS
TM
process
l
l
Rugged polysilicon gate cell structure
Fast switching times
Applications
l
l
l
l
Level shifting
Triggers
Solid state relays
Current regulators
V
GS
= 10 V, I
D
= I
D25
Pulse test, t
300 ms, duty cycle d
2 %
© 2001 IXYS All rights reserved
98812B (11/01)
首页 - - 友情链接
Copyright© 2001 - 2014 ICPDF All Rights Reserved ICPDF.COM

粤公网安备 44030402000629号


粤ICP备13051289号-7