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HER102 HIGH EFFICIENT RECTIFIER DIODES
型号:   HER102
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描述:   HIGH EFFICIENT RECTIFIER DIODES
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品牌   EIC [ EIC DISCRETE SEMICONDUCTORS ]
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HER101 - HER108
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
HIGH EFFICIENT
RECTIFIER DIODES
DO - 41
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55
°C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
HER
101
50
35
50
HER
102
100
70
100
HER
103
200
140
200
HER
104
300
210
300
HER
105
400
280
400
HER
106
600
420
600
HER
107
800
560
800
HER
108
1000
700
1000
UNIT
V
V
V
A
1.0
I
FSM
V
F
I
R
I
R(H)
Trr
30
1.1
5
50
50
50
- 65 to + 150
- 65 to + 150
75
1.7
A
V
µA
µA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
C
J
T
J
T
STG
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 01 : April 2, 2002
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