电子元器件数据表 IC PDF查询
English 中文版
  品牌   我要上传
型号:  
描述:
TSC80C51-L16IID/883  AAT3216IJS-3.0-T1  AAT3216IJS-2.0-T1  AAT3216IJS-3.3-T1  TC7116IJL  LP2966IMM-3636  TSC80C51-16IHD/883  LT1086IK-12  TC426IJA  LT1016IN8  
BAT54C SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL
型号:   BAT54C
PDF文件: 下载PDF文件   鼠标右键选目标另存为
网页直接浏览   不需安装PDF阅读软件
在线打开PDF文件   需安装PDF阅读软件
描述:   SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL
文件大小 :   107 K    2 页
Logo:   
品牌   EIC [ EIC DISCRETE SEMICONDUCTORS ]
购买 :   
  浏览型号BAT54C的Datasheet PDF文件第2页  
100%
Certificate TH97/10561QM
Certificate TW00/17276EM
BAT54/54A/54C/54S
PRV : 30 Volts
Io : 200 mA
FEATURES :
* These diodes feature very low turn-on voltage
* Fast switching
* These devices are protected by a PN junction
guard ring against excessive voltage, such
as electrostatic discharges
* Pb / RoHS Free
SMALL SIGNAL SCHOTTKY
DIODE, SINGLE & DUAL
SOT-23
1.40
0.95
0.50
0.35
0.19
0.08
1
3.10
2.70
1.65
1.20
3.0
2.2
1.02
0.89
3
2
0.100
0.013
2.04
1.78
MECHANICAL DATA :
* Case : SOT-23 plastic Case
* BAT54 Marking Code : L4
* BAT54A Marking Code : L42
* BAT54C Marking Code : L43
* BAT54S Marking Code : L44
BAT54
3
Dimensions in millimeters
BAT54A
3
BAT54C
3
BAT54S
3
1
2
1
2
1
2
1
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Rectified Average Forward Current
Maximum Repetitive Peak Forward Current
Maximum Peak Forward Surge Current at tp < 1 s
Total Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
P
tot
R
ӨJA
T
J
T
STG
Value
30
200
(1)
300
(1)
600
(1)
230
430
125
-65 to +150
(1)
Unit
V
mA
mA
mA
mW
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(Rating at
Parameter
Reverse Breakdown Voltage
Leakage Current (Note 2)
Forward Voltage (Note 2)
25 °C ambient temperature unless otherwise specified.)
Test Condition
I
R
= 100 µA pulses
V
R
= 25 V
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA through I
R
= 10 mA,
to Irr = 1A , R
L
= 100
Symbol
V
(BR)
I
R
V
F
V
F
V
F
V
F
V
F
C
tot
Trr
Min.
30
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
2
240
320
400
500
800
10
5
Unit
V
µA
mV
mV
mV
mV
mV
pF
ns
Diode Capacitance
Reverse Recovery Time
Notes :
(1) Device on fiberglass substrate
(2) Pulse test tp < 300 µs,
δ<
2%
Page 1 of 2
Rev. 01 : April 17, 2006
首页 - - 友情链接
Copyright© 2001 - 2014 ICPDF All Rights Reserved ICPDF.COM

粤公网安备 44030402000629号


粤ICP备13051289号-7