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HYE18M512160BF-6 [QIMONDA]

DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant; DRAM的移动应用程序512兆位的DDR移动-RAM符合RoHS标准

HYE18M512160BF-6


元器件型号：	HYE18M512160BF-6
生产厂家：	QIMONDA AG
描述和应用：	DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant DRAM的移动应用程序512兆位的DDR移动-RAM符合RoHS标准动态存储器双倍数据速率
PDF文件：	总24页 (文件大小：795K)
下载文档：	下载PDF数据表文档文件
型号参数：HYE18M512160BF-6参数

HYE18M512160BF-7.5

DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant

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28 QIMONDA

HYE18P16161AC

16M Asynchronous/Page CellularRAM

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15 INFINEON

HYE18P16161AC-60

MEMORY SPECTRUM

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17 INFINEON

HYE18P16161AC-70

16M Asynchronous/Page CellularRAM

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12 INFINEON

HYE18P16161AC-85

16M Asynchronous/Page CellularRAM

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17 INFINEON

HYE18P16161ACL70

16M Asynchronous/Page CellularRAM

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16 INFINEON

HYE18P16161AC-L70

Pseudo Static RAM, 1MX16, 70ns, CMOS, PBGA48, PLASTIC, VFBGA-48

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0 INFINEON

HYE18P16161ACL85

16M Asynchronous/Page CellularRAM

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16 INFINEON

HYE18P16161AC-L85

Pseudo Static RAM, 1MX16, 85ns, CMOS, PBGA48, PLASTIC, VFBGA-48

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0 INFINEON

HYE18P32160AC

32M Synchronous Burst CellularRAM

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19 INFINEON

HYE18P32160AC-125

32M Synchronous Burst CellularRAM

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21 INFINEON

HYE18P32160AC-15

32M Synchronous Burst CellularRAM

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14 INFINEON

HYE18P32160AC-96

32M Synchronous Burst CellularRAM

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17 INFINEON

HYE18P32160AC-L12.5

Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, PLASTIC, VFBGA-54

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0 INFINEON

HYE18P32160ACL125

32M Synchronous Burst CellularRAM

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14 INFINEON

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