QPA3333SR [QORVO]
45-1218 MHz GaAs/GaN Power Doubler Module;
| 型号： | QPA3333SR |
| 厂家： | 
Qorvo |
| 描述： | 45-1218 MHz GaAs/GaN Power Doubler Module |
| 文件： | 总9页 (文件大小：381K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA3333
45-1218 MHz GaAs/GaN Power Doubler Module
®
Product Description
QPA3333
The QPA3333 is a Power Doubler amplifier SMD Module.
The part employs GaAs MESFET, GaAs pHEMT and GaN
HEMT die and is operated from 45MHz to 1218MHz. It
provides excellent linearity and superior return loss
performance with low noise and optimal reliability. DC
current of the device can be externally adjusted for
optimum distortion performance versus power consumption
over a wide range of output level.
9 pin, 11.0 mm x 8.5 mm x 1.375 mm package
Product Features
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Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Functional Block Diagram
Current
Setting
Temperature
Sensing
V+
Low Noise
Unconditionally Stable Under all Terminations
27.0dB Min Gain at 1218 MHz
470mA max at 24 VDC
INPUT
OUTPUT
QPA3333
Applications
• 45ꢀ–ꢀ1218 MHz CATV Amplifier Systems
Ordering Information
Part No.
Description
QPA3333SB
QPA3333SR
QPA3333TR7
QPA3333PCBA-410
Sample bag 5 pcs
7” Reel with 100 pcs
7” Reel with 500 pcs
Fully assembled Evaluation Board
Data Sheet Rev. D, October 2021 | Subject to change without notice
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QPA3333
®
Absolute Maximum Ratings
Parameter
Valueꢀ/ꢀRange
+30V
DC Supply over-voltage (5 minutes)
Storage Temperature
-40 to +100 °C
-30 to +100 °C
Operating Mounting Base Temperature
Moisture Sensitivity Level
IPC/JEDEC J-STD-20
MSL3 @ 260 °C
75dBmV
RF Input Voltage (single tone; on
Evaluation Board)
Operation of this device outside the parameter ranges given above may
cause permanent damage.
Electrical Specifications
Conditions (V+=24V, TMB=30°C, ZS=ZL=75 Pin3 not
connected)
Parameter
Min
Typ
Max
Units
Operational Frequency Range
–
45
–
1218
470
MHz
mA
Current (IDD
)
–
450
26.3
27.8
1.4
Gain
fo = 45 MHz
Gain
fo = 1218 MHz
27.0
29.0
dB
Gain Slope
45 to 1218 MHz [1]
45 to 1218 MHz
fo= 45 to 320 MHz
fo= 320 to 640 MHz
fo= 640 to 870 MHz
fo= 870 to 1003 MHz
fo= 1003 to 1218 MHz
fo= 45 to 320 MHz
fo= 320 to 640 MHz
fo= 640 to 870 MHz
fo= 870 to 1003 MHz
fo= 1003 to 1218 MHz
fo= 50 to 1218 MHz
Junction to Mounting Base
Gain Flatness
0.6
20
19
19
17
16
20
19
19
17
16
–
–
Input Return Loss (-S11)
–
dB
–
–
–
–
Output Return Loss (-S22)
–
dB
–
–
Noise Figure
Thermal Resistance
CTB
4.6
3.6
-80
-75
-74
60
5.0
dB
K/W
dBc
dBc
dBc
dB
-76
-70
-70
Vo = 58dBmV at 1218MHz, 16.5dB extrapolated tilt,
79 analog channels plus 111 digital channels
(-6dB offset) [2,3], TCP[4] = 70.0dBmV
XMOD
CSO
CIN
56
Notes:
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +41.5dBmV to +48.5dBmV tilted output level, plus 111
digital channels, -6dB offset relative to the equivalent analog carrier.
3. Composite Second Order (CSO) – The CSO parameter (both sum and difference products) is defined by ANSI/SCTE 6.
Composite Triple Beat (CTB) – The CTB parameter us defined by ANSI/SCTE6. Cross Modulation (XMOD) – Cross
modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of carrier being
tested, Carrier to Intermodulation Noise (CIN) – The CIN parameter is defined by ANSI/SCTE17 (Test procedure for carrier to
noise)
4. Total Composite Power
Data Sheet Rev. D, October 2021 | Subject to change without notice
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QPA3333
®
Evaluation Board Assembly Drawing
Note:
Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. A via drill diameter of 0.4mm and a
minimum via wall copper plating thickness of 25um is recommended. Open vias are preferred to allow flux and gases to escape during reflow soldering
and therefore to minimize voiding. Underneath this via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete
module DC power (up to 11.5 Watts). In any case the module backside temperature should not exceed 100 °C.
Evaluation Board Schematic
FB1
Bead 60Ω
V+
C1
4n7
R1
10kΩ
D1
PTVS28VS1UR
R2
3.3kΩ
Vt
C8
4.7nF
D2
GND
MM3Z5V6T1
C11
DNI
1
2
9
8
7
6
5
RF IN +
5.6V V+
RF OUT +
Rt
T1
RFXF0010
T2
RFXF0008H
T3
C5
C3
1.8pF
3
4
5
2
1
RFXF0007
4.7nF
RF OUT
3
4
2
1
3
4
2
1
C2
4.7nF
R3
10Ω
U1
QPA3333
24V V+
GND
RF IN
R4
R8
DNI
C7
0.3pF
C13
DNI
3
4
IDC Adjust
RF IN -
R5
DNI
D3
C6
4.7nF
C9
DNI
C10
DNI
TQP200002
25V
R9
DNI
C12
DNI
RF OUT -
R6
DNI
C4
1.8pF
R10
DNI
R7
DNI
Data Sheet Rev. D, October 2021 | Subject to change without notice
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QPA3333
®
Evaluation Board Bill of Materials (BOM)
Reference Des.
n/a
Value
n/a
Description
Printed Circuit Board
Manuf.
Qorvo
Part Number
C1, C2, C5, C6, C8
4.7nF
1.8pF
0.3pF
DNI
Cap., 0402, 10%, 50V, X7R
Cap., 0402, ±0.25pF, 50V, C0G
Cap., 0402, ±0.1pF, 50V, C0G
various
various
various
C3, C4
C7
C9, C10, C11, C12, C13
R1
10kΩ
Res., 0603, ±1%, TK100
Res., 0402, ±1%, TK100
Res., 0402, ±1%, TK100
Optional to set current value
Res., 0402, 0Ω, TK100
various
various
R2
3.3kΩ
10Ω
R3
various
R4
See page 5
DNI
various
R5, R6, R7, R8, R9, R10
various
FB1
D1
60Ω at 100MHz
28V
Impedance Bead
Taiyo Yuden
NXP
BK 1608 HS 600
Transient Voltage Suppressor Diode
PTVS28VS1UR
ON
D2
5.6V
Zener Diode
MM3Z5V6T1G
Semiconductor
D3
T1
T2
T3
U1
25V
ESD Diode
Qorvo / Unisem TQP200002
RFXF0010
RFXF0008H
RFXF0007
QPA3333
Transformer
Qorvo
Qorvo
Qorvo
Qorvo
RFXF0010
RFXF0008H
RFXF0007
QPA3333
Transformer
Transformer
CATV Power Doubler Module
Data Sheet Rev. D, October 2021 | Subject to change without notice
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QPA3333
®
Current Adjustment
The QPA3333canbeoperatedoverawiderangeofcurrenttoprovidemaximumrequiredperformancewithminimum
current consumption. Changing the value of resistor R4on application circuit allows a variation of the current between
450 mA and 320 mA (typ.). Within the recommended range of current between 450 mA and 320mA gain (S21) change is
less than 0.4 dB (typ.) and noise figure change is less than 0.2 dB (typ.).
Device Current vs. Resistor R4 (typical values)
470
Device Current
[mA] (typical)
R4 [Ω]
450
430
410
390
370
350
330
310
450
430
410
390
370
350
330
320
open
10000
4300
2200
1100
560
180
0
100
1000
10000
Resistor R4 [Ω]
Device Current vs. Distortion Degradation (typical values)
460
440
420
400
380
360
340
320
CTB
CIN
0
2
4
6
8
10
CTB and CIN degradation [dB]
Test Condition: V+=24V, TMB=30°C, ZS=ZL=75Ω, IDC=IDC (typ.), NTSC, 79ch analog: 48.5dBmV @ 547.25 MHz; 7 dB tilt, with 111 J.83/B
QAM256 channels (6 dB down)
Data Sheet Rev. D, October 2021 | Subject to change without notice
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QPA3333
®
QPA3333 Temperature Sensing Feature
The QPA3333 provides an internal NTC resistor for temperature sensing. This resistor is located right next to the output
transistor stage. Within the application circuit the NTC is part of a voltage divider. The output voltage of the voltage divider
(Vt) can be correlated to the module backside temperature.
Module Backside Temperature versus Vt (typical values)
Temperature [°C]
120
110
100
90
80
70
60
50
40
30
20
750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500
Vt [mV]
Data Sheet Rev. D, October 2021 | Subject to change without notice
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QPA3333
®
Pin Configuration
1
2
9
8
7
RF OUT +
RF IN +
5.6V V+
Rt
GND
24V V+
GND
3
4
6
5
IDC Adjust
RF IN -
RF OUT -
TOP PIN VIEW
Pin Description
Pin No.
Label
Description
1
2
3
4
5
6
7
8
9
RF IN (+)
5.6V V+
IDC Adjust
RF IN (-)
RF OUT (-)
GND
RF AMP Positive Input
Supply Voltage 5.6V
Current Adjustment
RF AMP Negative Input
RF AMP Negative Output
Ground
24V V+
Supply Voltage 24V
Rt
NTC Output for Temperature Sensing
RF AMP Positive Output
RF OUT (+)
Data Sheet Rev. D, October 2021 | Subject to change without notice
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QPA3333
®
Package Outline Drawing (Dimensions in millimeters)
11.000±0.100
4.100
Pin1
A
A
A
A
A
A
A
2x 3.000
1.600
1.600
2x 1.500
0.000
A
A
2x 1.500
2x 3.000
4.100
TOP VIEW
A= 0.600 x 0.600 mm
BOTTOM PIN VIEW
molding cap
substrate
SIDE VIEW
Data Sheet Rev. D, October 2021 | Subject to change without notice
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QPA3333
®
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
1B
JEDEC JS-001
JEDEC JS-002
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) C3
MSLꢀ–ꢀMoisture Sensitivity Level
Level 3
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: NiPdAu
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Halogen Free (Chlorine, Bromine)
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2017 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. D, October 2021 | Subject to change without notice
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