QPA4501EVB01 [QORVO]
3 W, 28 V, 4.4 â 5.0 GHz GaN PA Module;
| 型号： | QPA4501EVB01 |
| 厂家： | 
Qorvo |
| 描述： | 3 W, 28 V, 4.4 â 5.0 GHz GaN PA Module |
| 文件： | 总12页 (文件大小：756K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA4501
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
®
Product Overview
The QPA4501 is an integrated 2-stage Power Amplifier
Module designed for massive MIMO applications up to
3 W RMS at the device output covering frequency range
from 4.4 to 5.0 GHz.
The module is 50 Ω input and output and requires minimal
external components. The module is also compact and
offers a much smaller footprint than traditional discrete
component solutions.
36 Pad 6 xꢀ10ꢀmm Plastic QFN Package
Key Features
• Operating Frequency Range: 4.4ꢁ–ꢁ5.0ꢁGHz
• Operating Drain Voltage: +28 V
The QPA4501 incorporates a Doherty final stage delivering
high power added efficiency for the entire module up to
3 W average power.
• 50 Ω Input / Output
• Integrated Doherty Final Stage
RoHS compliant.
• Gain at 1.25 W Avg.: 29.9 dB
• Power Added Efficiency at 1.25 W Avg.: 25.7%
• Power Added Efficiency at 3 W Avg.: 38%
• 6 x 10 mm Plastic Surface Mount Package
Note: T = +25°C, single-carrier, 20 MHz LTE signal with 7.8 dB PAR at
0.01% CCDF.
Functional Block Diagram
Applications
• 5G Massive MIMO
• W-CDMA / LTE
• Macrocell Base Station Driver
• Microcell Base Station
• Small Cell Final Stage
• Active Antenna
• General Purpose Applications
Ordering Information
Part No.
Description
QPA4501SB
QPA4501SR
QPA4501TR13
QPA4501EVB01
Sample Bag – 5 Pieces
Short Reel – 100 Pieces
13” Reel – 2500 Pieces
Tested 4.4 – 5.0 GHz EVB
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Value
120
Units
V
Parameter
Min
Typ
−2.6
−4.2
−2.6
+28
50
Max Units
Breakdown Voltage (BVDG
)
Gate Voltage (VG1
Gate Voltage (VG2
Gate Voltage (VG3
)
)
)
V
V
Gate Voltage (VG1,2,3
)
−7 to +2
+40
V
Drain Voltage (VD1,2,3
RF Input Power (1)
)
V
V
+12
dBm
Drain Voltage (VD1,2,3
)
V
VSWR Mismatch, P3dB Pulse
(10% Duty Cycle, 100 µs
Pulse Width), T = +25°C
Quiescent Current (IDQ1
Quiescent Current (IDQ3
Power Dissipation
)
)
mA
mA
W
10:1
63
75
3.8
Power Dissipation
Notes:
W
Note: Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
1. Tested at 4.7 GHz, T = +25°C, single-carrier, 20 MHz LTE signal
with 7.8 dB PAR at 0.01% CCDF.
2. Exceeding any one or a combination of the Absolute Maximum
Rating conditions may cause permanent damage to the device.
Extended application of Absolute Maximum Rating conditions to
the device may reduce device reliability.
Electrical Specifications
Parameter
Conditions
Min
Typ
Max
Units
GHz
mA
Frequency Range
4.4
5.0
Driver Quiescent Current (IDQ1
)
50
75
Carrier Quiescent Current (IDQ3
Gain
)
mA
PAVG = 31 dBm
26.0
41.9
19.8
29.9
43.5
25.7
−35.1
dB
Saturated Power (PSAT
)
Pulse (10% Duty Cycle, 500 µs Width), PIN = 19 dBm
PAVG = 31 dBm
dBm
%
Power Added Efficiency (PAE)
Raw ACLR
PAVG = 31 dBm
dBc
Test conditions unless otherwise noted: VD1,2,3ꢁ=ꢁ+28ꢁV, IDQ1 = 50 mA, IDQ3 = 75 mA, VG2 = −4.2 V, T = +25°C, using a single-carrier, 20 MHz LTE signal
with 7.8 dB PAR at 0.01% CCDF on the reference design fixture.
Thermal Information
Parameter
Conditions
Values
Units
Peak IR Surface Thermal Resistance TCASE = +85°C, TCH = 91°C
1.5
°C/W
at Average Power (θJC)
CW: PDISS = 4 W, POUT = 1.25 W
Notes:
1. Based on expected carrier amplifier efficiency of Doherty.
2. POUT assumes 10% peaking amplifier contribution of total average Doherty rated power.
3. Thermal resistance is measured to package backside.
4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
QPA4501 4.4 – 5.0 GHz Reference Design
EVB Layout
EVB Schematic
PCB Stackup and Material
Notes:
1. All dimensions are in inches.
2. PCB is soldered on a 2 in. x 2 in. copper base plate with 0.25 in. thickness.
Bill of Materials – QPA4501 4.4 – 5.0 GHz Evaluation Board
Reference Des.
C1, C10
Value Description
220 µF Capacitor, 220 µF, electrolytic, 50 V
22,000 pF Capacitor, 22,000 pF, 10%, 50 V, X7R, 0603
Manufacturer
Panasonic
Murata
Part Number
EEEFK1H221P
GRM188R71H223KA01D
GRM31CR71H475KA12L
GRM32ER71H106KA
PAF-S00-000
C4, C7, C14
C3, C8, C11, C13
C2, C9, C12
J1, J2
4.7 µF
10 µF
Capacitor, 4.7 µF, 10%, 50 V, X7R, 1206
Capacitor, 10 µF, 10%, 50 V, X7R, 1210
Connector, SMA, 4-Hole Panel Mount Jack
Connector, HDR, ST, PLRZD, 5-Pin, 0.100”
Connector, HDR, ST, 3-PIN, T/H
Murata
Murata
Gigalane
ITW Pancon
Molex
P1, P2
MPSS100-5-C
P3
22-28-4033
U1
3 W 4.4 – 5.0 GHz GaN PA Module
Qorvo
QPA4501
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
Performance Plots
Gain vs. Average Output Power
IDQ1 = 50 mA, IDQ3 = 75 mA,VG2 = −4.2 V,VD1,2,3 = +28 V,
PAE vs. Average Output Power
IDQ1 = 50 mA, IDQ3 = 75 mA,VG2 = −4.2 V,VD1,2,3 = +28 V,
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
55
50
45
40
35
30
25
20
15
10
5
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
4.4 GHz
4.6 GHz
4.8 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
Temp.=+25°C
5.0 GHz
Temp. = +25°C
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
Peak Power vs. Average Output Power
IDQ1 = 50 mA, IDQ3 = 75 mA,VG2 = −4.2 V,VD1,2,3 = +28 V,
ACPR vs. Average Output Power
IDQ1 = 50 mA, IDQ3 = 75 mA,VG2 = −4.2 V,VD1,2,3 = +28 V,
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
4.4 GHz
4.6 GHz
4.8 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
Temp. = +25°C
5.0 GHz
Temp. = +25°C
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
Test conditions unless otherwise noted: VD1,2,3ꢁ=ꢁ+28ꢁV, IDQ1 = 50 mA, IDQ3 = 75 mA, VG2 = −4.2 V, T = +25°C, tested using a single-carrier, 20 MHz LTE
signal with 7.8 dB PAR at 0.01% CCDF on a reference design fixture.
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
4 of 12
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
Performance Plots
Gain vs. Average Output Power
IDQ1 = 50 mA, IDQ3 = 75 mA,VD1,2,3 = +28 V, 1C 20 MHz LTE,
PAR = 7.8 dB @ 0.01% CCDF Freq = 4.6 GHz
PAE vs. Average Output Power
IDQ1 = 50 mA, IDQ3 = 75 mA,VD1,2,3 = +28 V, 1C 20 MHz LTE,
PAR = 7.8 dB @ 0.01% CCDF Freq = 4.6 GHz
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
55
50
45
40
35
30
25
20
15
10
5
−40°C, VG2 = -3.77 V
+25°C, VG2 = -4.08 V
+105°C, VG2 = -4.16 V
−40°C, VG2 = -3.77 V
+25°C, VG2 = -4.08 V
+105°C, VG2 = -4.16 V
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
Peak Power vs. Average Output Power
IDQ1 = 50 mA, IDQ3 = 75 mA,VD1,2,3 = +28 V, 1C 20 MHz LTE,
PAR = 7.8 dB @ 0.01% CCDF Freq = 4.6 GHz
ACPR vs. Average Output Power
IDQ1 = 50 mA, IDQ3 = 75 mA,VD1,2,3 = +28 V, 1C 20 MHz LTE,
PAR = 7.8 dB @ 0.01% CCDF Freq = 4.6 GHz
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
−40°C, VG2 = -3.77 V
+25°C, VG2 = -4.08 V
+105°C, VG2 = -4.16V
−40°C, VG2 = -3.77 V
+25°C, VG2 = -4.08 V
+105°C, VG2 = -4.16 V
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
Test conditions unless otherwise noted: VD1,2,3ꢁ=ꢁ+28ꢁV, IDQ1 = 50 mA, IDQ3 = 75 mA, VG2 = −4.2 V, tested at 4.6 GHz using a single-carrier, 20 MHz LTE
signal with 7.8 dB PAR at 0.01% CCDF on a reference design fixture.
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
Pad Configuration and Description
Pad No.
Label
VD1
Description
1
Driver Amplifier, Drain Bias
Driver Amplifier, Gate Bias
RF Input
4
VG1
6
RF IN
VG3
11
16
19
27
32
Carrier Amplifier, Gate Bias
Carrier Amplifier, Drain Bias
RF Output
VD3
RF OUT
VD2
Peaking Amplifier, Drain Bias
Peaking Amplifier, Gate Bias
VG2
2 – 3, 5, 7, 10, 12 – 15, 17 – 18,
20 – 26, 28 – 31, 33 – 36
GND
Internal Grounding. Recommend connecting to Epad ground.
DC/RF Ground. Must be soldered to EVB ground plane over array of
vias for thermal and RF performance. Solder voids under EPAD will
result in excessive junction temperatures causing permanent damage.
EPAD
GND
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
Package Marking and Dimensions
Marking: Qorvo Logo
Part Number – QPA4501
Date Codeꢁ–ꢁYYWW
Batch Code – MXXXX
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Exposed metallization is NiPdAu plated. Au thickness is 0.095 µm.
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
Mounting Footprint Pattern
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. All vias are plated thru hole (PTH)
to ground.
3. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
Tape and Reel Information – Carrier and Cover Tape Dimensions
Feature
Measure
Symbol
Size (in)
0.248
0.406
0.061
0.472
0.079
0.295
0.524
0.630
Size (mm)
6.30
Length
A0
B0
K0
P1
P2
F
Width
10.3
Cavity
Depth
1.55
Pitch
12.0
Cavity to Perforation - Length Direction
2.00
Centerline Distance
Cavity to Perforation - Width Direction
7.5
Cover Tape
Carrier Tape
Width
Width
C
13.3
W
16.0
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
Tape and Reel Information – Reel Dimensions
Standard T/R size = 2,500 pieces on a 13” reel.
Feature
Measure
Symbol
Size (in)
12.992
0.874
Size (mm)
330.0
22.2
Diameter
A
W2
W1
N
Flange
Thickness
Space Between Flange
Outer Diameter
Arbor Hole Diameter
Key Slit Width
Key Slit Diameter
0.661
16.8
4.016
102.0
13.0
C
0.512
Hub
B
0.079
2.0
D
0.787
20.0
Tape and Reel Information – Tape Length and Label Placement
Notes:
1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A.
2. Labels are placed on the flange opposite the sprockets in the carrier tape.
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
Recommended Solder Temperature Profile
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4 – 5.0 GHz GaN PA Module
Handling Precautions
Parameter
Rating
Standard
ANSI/ESDA/JEDEC Standard JS-001
ESDꢁ–ꢁHuman Body Model (HBM)
Class 1B (500 V)
ESDꢁ–ꢁCharged Device Model (CDM) Class C3 (1000 V) ANSI/ESDA/JEDEC Standard JS-002
MSLꢁ–ꢁ260°C Convection Reflow
Level 3
IPC/JEDEC Standard J-STD-020
Caution!
ESD-Sensitive Device
Solderability
Compatible with lead-free (260°C max. reflow temp.) soldering processes.
Package lead plating is NiPdAu. Au thickness is 0.095 µm.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
For technical questions and application information:
Email: BTSApplications@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2021 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. C, Sep 8th, 2021 | Subject to change without notice.
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