QPA9501_V01 [QORVO]
3-Stage LTE-U/LAA Power Amplifier;
| 型号： | QPA9501_V01 |
| 厂家： | 
Qorvo |
| 描述： | 3-Stage LTE-U/LAA Power Amplifier LTE |
| 文件： | 总10页 (文件大小：850K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA9501
3-Stage LTE-U/LAA Power Amplifier
®
General Description
The QPA9501 is high power amplifier module containing an
internally matched 3-stage PA, compensated DC biasing
circuit and output power detector. This PA module is
optimized for the WiFi bands from 5.1-5.9GHz and hence
well suited for LTE-U/LAA applications. It provides high
gain (32ꢀdB) and -47dBc ACLR at Pout of 22dBm with a
20MHz LTE signal without any DPD.
4ꢀxꢀ4ꢀmm 20-pin Leadless QFN Package
The QPA9501 features chipset logic compatible control
voltages and buffered PA enable pin (PAEN) all of which
draw very low current to facilitate ease of use and
compatibility with current and future transceiver
generations. With its optimized power dissipation, this
amplifier module is well suited for implementation into next
generation MIMO configurations and well designed to work
with or without digital pre-distortion (DPD).
Product Features
• 4.9 GHz to 5.9 GHz Operational Bandwidth
• Fully Integrated Power Amplifier Module With Power
Detector
• Internally Matched Inputꢀ/ꢀOutput
• -47dBc ACLR with Pout = 22dBm avg
• Temperature Compensated Bias Network
• High Gainꢀ=ꢀ32ꢀdB
The QPA9501 is assembled in a small footprint 4.0 x 4.0 x
0.85 mm 20-pin QFN package.
• Integrated CMOS Compatible Logic and Shutdown
• Supply Voltage: +3.3 V to +5.0 V
• Leadless 4.0ꢀxꢀ4.0ꢀxꢀ0.85 mm Pb-Free QFN Package
Applications
Functional Block Diagram
• 5G, Pre-5G Small Cell BTS
• LTE-U/LAA
Pin 1 Reference Mark
• WiFi Access Points and Small Cells
• Telematics
• Point-to-point and Backhaul
• ISM Band
20
19
18
17
16
1
2
15
GND
NC
DC Biasing/
Control Circuit
14 GND
GND
13
12
11
RFOUT
GND
3
RFIN
4
5
GND
PA_EN
GND
6
7
8
9
10
Backside Paddle
RF/DC GND
Ordering Information
Top View
Part No.
Description
QPA9501TR13
QPA9501PCB401
2,500 pieces on a 13” reel (standard)
Evaluation Board
Datasheet, August 31, 2018 | Subject to change without notice
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QPA9501
3-Stage LTE-U/LAA Power Amplifier
®
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
−40 to 150ꢀ°C
+5 dBm
Parameter
Min
+3.15
−40
Typ
+5
Max Units
Storage Temperature
RF Input Power, CW, 50 Ω, T = 25ꢀ°C
Device Voltage
VCC1, VCC2, VCC3
+5.5
+105
170
V
TAMB
25
°C
°C
+6.0 V
Tj (for>106 hours MTTF)
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Parameter
Conditions(1)
Min
Typ
Max
Units
MHz
dB
Operational Freq. Range
4900
5900
4900 MHz
5200 MHz
5800 MHz
5800 MHz
33.6
34
Small Signal Gain
30
36
36
dB
29.5
32
dB
Input Return Loss
Output Return Loss
10
dB
8
dB
4900 MHz
5200 MHz
5800 MHz
4900 MHz
5200 MHz
5800 MHz
4900 MHz
5200 MHz
5800 MHz
6.0
6.2
6.5
-46
-47
-48
+31.1
+31.8
+33
7
%
Power Added Efficiency (2)
5.5
5.5
%
%
dBc
dBc
dBc
dBm
dBm
dBm
dB
ACLR (2)
P1dB
-45
-45
+29.5
+29.5
Noise Figure
Rise/Fall Time
0.4
+3.0
0.8
VCC1
+0.45
100
us
Input Voltage for High State
Input Voltage for Low State
+1.8
0
PA Enable Voltage
V
PA Enable Current
μA
mA
mA
μA
Icq
Total current with no RF
Operating current with Pout = 22dBm
PA_EN= Low, No RF
No RF
250
450
350
520
450
Icc
650
TX Shut Down Current
8
+0.25
+0.35
+0.68
+0.38
Detector Voltage
Stability
V
Pout = +22ꢀdBm
Pout = +28 dBm,
VSWR = 6:1, all phases
Junction to backside paddle
All non-harmonically related
outputs < –50 dBc/100 kHz
-
Thermal Resistance, θjc
17
°C/W
Notes:
1. Test conditions unless otherwise noted: VCC1ꢁ=ꢁVCC2ꢁ=ꢁVCC3 =ꢁ+5.0 V, PA Enable High = 3.0 V. Temp.ꢀ=ꢀ+25ꢀ°C
2. Pout = 22dBm average, 20MHz LTE, PAR 9.5dB
Datasheet, August 31, 2018 | Subject to change without notice
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QPA9501
3-Stage LTE-U/LAA Power Amplifier
®
Timing Diagram
Transmit Timing Diagram
RF/DC Power On/Off Sequence
VCC
PA-EN
RF On
TX RF Signal
RF OFF
Time
Td ≥ 1 us
Td Td
Td
Td
Notes: DC and RF signal levels per data sheet specification.
Observe the timing sequence shown in the diagram above and described below.
prior to turning on or pulsing PA enable.
Turn off PA enable prior to turning off VCC.
Apply VCC
Turn on PA enable prior to applying RF signal.
Turn off RF signal prior to turning off PA enable.
Logic Truth Table
PA Mode
Disabled
Enabled
PA_EN
Low
High
Datasheet, August 31, 2018 | Subject to change without notice
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QPA9501
3-Stage LTE-U/LAA Power Amplifier
®
Evaluation Board
C2
220pF
C11
R2
0
R3
0
10uF
R8
0
C8
10uF
C10
220pF
R7
27
Only for 5V operation. For lower
Vcc, R7 = 0
C9
220pF
R4
27.4K
R5
2
R6
2
C7
0.1uF
C6
0.1uF
R2
20
19
18
17
16
C8
C9
C6
R5
1
2
15
14
GND
GND
NC
J1
U1
J2
C1
GND
J2
J1
U1
4X4_20-pin
3
13
RF_OUT
RF_IN
GND
C1
10pF
RF
Output
RF
Input
4
5
12
11
GND
GND
PA_EN
6
7
8
9
10
Bill of Material ꢀ–ꢀ QPA9501PCB401
Reference Des.
n/a
Value Description
Manuf.
Qorvo
Part Number
1099541
n/a
n/a
Printed Circuit Board
U1
High Power 5GHz PA
Qorvo
QPA9501
R2, R8, R3
C1
0 Ω
Resistor, Chip, 0402, 5%
Capacitor, Chip, 0402, 5%
Capacitor, Chip, 0402, 10%
Capacitor, Chip, 0402, 10%
various
various
various
various
various
various
various
various
10 pF
0.1 uF
10 uF
C6, C7
C8, C11
C9, C10, C2
R7 (1)
220 pF Capacitor, Chip, 0402, 10%
0 to 27 Ω Resistor, Chip, 0402, 5%, 1/10W
2 Ω Resistor, Chip, 0402, 5%, 1/16W
27.4 KΩ Resistor, Chip, 0402, 5%, 1/16W
R5, R6 (2)
R4
Datasheet, August 31, 2018 | Subject to change without notice
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QPA9501
3-Stage LTE-U/LAA Power Amplifier
®
Performance Plots
VCC1ꢁ=ꢁVCC2ꢁ=ꢁVCC3 =ꢁ+5.0 V, PA_EN = +3.0V, Temp.ꢀ=ꢀ+25ꢀ°C
Wideband Gain vs. Frequency
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
40
30
20
10
0
0
-4
0
-4
+85ꢁ°C
+25ꢁ°C
−40ꢁ°C
+85°C
+25°C
−40°C
+85ꢁ°C
+25ꢁ°C
−40ꢁ°C
-8
-8
-12
-16
-20
-12
-16
-20
-10
3.8
4.2
4.6
5
5.4
5.8
6.2
6.6
7
7.4
7.8
4.8
5
5.2
5.4
5.6
5.8
6
4.8
5
5.2
5.4
5.6
5.8
6
Frequency (GHz)
Frequency (GHz)
Frequency (GHz)
ACLR vs Pout
PAE vs Pout
Vdet vs. Output Power
-33
-35
-37
-39
-41
-43
-45
-47
-49
-51
-53
-55
22
20
18
16
14
12
10
8
1.0
LTE 20MHz signal, PAR = 9.5dB
LTE 20MHz signal, PAR = 9.5dB
5855 MHz
5500 MHz
5200 MHz
0.9
0.8
0.7
0.6
0.5
0.4
0.3
5200 MHz
5500 MHz
5800 MHz
5200 MHz
6
5500 MHz
5800 MHz
4
2
0
0
4
8
12
16
20
24
28
16 17 18 19 20 21 22 23 24 25 26 27 28 29
Pout (dBm)
16 17 18 19 20 21 22 23 24 25 26 27 28 29
Pout (dBm)
Output Power (dBm)
ACPR vs Pout
ACPR vs Pout
ACPR vs Pout
-30
-35
-40
-45
-50
-55
-30
-35
-40
-45
-50
-55
-30
Frequency = 5200 MHz
Frequency = 5500 MHz
Frequency = 5800 MHz
+105°C
+105°C
+85°C
+25°C
−40°C
20MHz LTE signal, PAR=9.5dB
20MHz LTE signal, PAR=9.5dB
20MHz LTE signal, PAR=9.5dB
+85°C
+25°C
−40°C
-35
-40
-45
-50
-55
+105°C
+85°C
+25°C
−40°C
16 17 18 19 20 21 22 23 24 25 26 27 28
Pout (dBm)
16 17 18 19 20 21 22 23 24 25 26 27 28
Pout (dBm)
16 17 18 19 20 21 22 23 24 25 26 27 28
Pout (dBm)
PAE vs Pout
18
16
14
12
10
8
Frequency = 5800 MHz
20MHz LTE signal, PAR=9.5dB
6
-40degC
25degC
85degC
105degC
4
2
0
16 17 18 19 20 21 22 23 24 25 26 27 28
Pout (dBm)
Datasheet, August 31, 2018 | Subject to change without notice
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QPA9501
3-Stage LTE-U/LAA Power Amplifier
®
Pin Configuration and Description
Pin 1 Reference Mark
20
19
18
17
16
1
15
GND
NC
DC Biasing/
Control Circuit
2
3
14 GND
GND
13
12
11
RFOUT
GND
RFIN
4
5
GND
PA_EN
GND
6
7
8
9
10
Backside Paddle
RF/DC GND
Pin No.
Label
Description
1
NC
No internal connection. This pin can be grounded or N/C on PCB.
2
GND
Ground
3
RF_IN
GND
RF Input
4
Ground
5
PA_EN
NC
PA Enable
6
No internal connection. This pin can be grounded or N/C on PCB.
7
DET_ALT
NC
Alternate Detector Output
8
No internal connection. This pin can be grounded or N/C on PCB.
9
VCC3
DET
Supply voltage for third stage PA
10
11
12
13
14
15
16
17
18
19
20
Detector Output
GND
Ground
GND
Ground
RF_OUT
GND
RF Output
Ground
GND
Ground
GND
Ground
GND
Ground
VCC3
VCC2
VCC1
Supply voltage for third stage PA
Supply voltage for second stage PA
Supply voltage for first stage PA
RF/DC ground. Use recommended via pattern to minimize inductance and
thermal resistance. See PCB Mounting Pattern for suggested footprint.
Backside Paddle
RF/DC GND
Datasheet, August 31, 2018 | Subject to change without notice
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QPA9501
3-Stage LTE-U/LAA Power Amplifier
®
Package Marking and Dimensions
0.85±0.05
A
4.00
(0.203)
(0.03)
(0.250)
2.50
B
PIN
1 INDICATOR
PIN # 1 I.D.
(0.30X45°)
3x (R0.10)
®
9501
4.00
2.50
Trace Code
20x 0.25
R0.05
0.10
0.05
A
C
B C
0.10
C
0.10
C A B
20x 0.50
0.50
Notes:
1. All dimensions are in millimeters.
PCB Mounting Pattern
4.40
2.70
.25
.500
.350
.500
.250
.800
.700
.700
4.400
.200
2.700
4.500
2.500
4.400
.200
1.00
.508
.508
2.500
.200
.500
1.00
4.500
BOARD METAL & VIA PATTERN
TOP VIEW
SOLDER MASK
TOP VIEW
STENCIL APERATURE
TOP VIEW (NOTE 4)
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Via holes are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We
recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25 mm (0.01”).
4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
Datasheet, August 31, 2018 | Subject to change without notice
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QPA9501
3-Stage LTE-U/LAA Power Amplifier
®
Tape and Reel Information – Carrier and Cover Tape Dimensions
Feature
Measure
Symbol
Size (in)
0.171
0.171
0.051
0.315
0.079
0.217
0.362
0.472
Size (mm)
4.35
Length
A0
B0
K0
P1
P2
F
Width
4.35
Cavity
Depth
1.30
Pitch
8.00
Cavity to Perforation - Length Direction
2.00
Centerline Distance
Cavity to Perforation - Width Direction
5.50
Cover Tape
Carrier Tape
Width
Width
C
9.20
W
12.0
Datasheet, August 31, 2018 | Subject to change without notice
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QPA9501
3-Stage LTE-U/LAA Power Amplifier
®
Tape and Reel Information – Reel Dimensions
Standard T/R size = 2,500 pieces on a 13” reel.
Feature
Measure
Symbol
Size (in)
12.992
0.717
Size (mm)
330.00
18.20
Diameter
A
W2
W1
N
Flange
Thickness
Space Between Flange
Outer Diameter
Arbor Hole Diameter
Key Slit Width
Key Slit Diameter
0.504
12.80
4.016
102.00
13.00
C
0.512
Hub
B
0.079
2.00
D
0.787
20.00
Tape and Reel Information – Tape Length and Label Placement
Notes:
1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A.
2. Labels are placed on the flange opposite the sprockets in the carrier tape.
Datasheet, August 31, 2018 | Subject to change without notice
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QPA9501
3-Stage LTE-U/LAA Power Amplifier
®
Handling Precautions
Parameter
Rating
Standard
ESDꢁ–ꢁHuman Body Model (HBM)
Class 1C
ESDAꢀ/ꢀJEDEC JS-001-2012
JEDEC JESD22-C101F
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
ESDꢁ–ꢁCharged Device Model (CDM) Class C3
MSLꢁ–ꢁMoisture Sensitivity Level
Level 1
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: NiPdAu
RoHS Compliance
This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
• Qorvo Green
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
For technical questions and application information:
Email: appsupport@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2018 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Datasheet, August 31, 2018 | Subject to change without notice
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