QPD0020 [QORVO]
35 W, 48 V, DC â 6 GHz, GaN RF Power Transistor;
| 型号： | QPD0020 |
| 厂家： | 
Qorvo |
| 描述： | 35 W, 48 V, DC â 6 GHz, GaN RF Power Transistor |
| 文件： | 总11页 (文件大小：1029K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPD0020
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
®
Product Overview
The QPD0020 is a 35 W unmatched discrete GaN on SiC
HEMT which operates from DC to 6 GHz on a +48 V supply
rail. It is ideally suited for base station, radar and
communications applications and can support both CW and
pulsed mode of operations.
The QPD0020 can be used in Doherty architecture for the
final stage of a base station power amplifier for small cell,
microcell, and active antenna systems. The QPD0020 can
also be used as a driver in a macrocell base station power
amplifier.
20 Pin 4x3 mm QFN Package
Key Features
• Operating Frequency Range: DC to 6 GHz
• Operating Drain Voltage: +48 V
• Maximum Output Power (PSAT): 34.7 W (1)
• Maximum Drain Efficiency: 77.8% (1)
• Efficiency-Tuned P3dB Gain: 18.8 dB (1)
• Surface Mount Plastic Package
The device is housed in an industry-standard 4x3 mm
surface mount QFN package.
Lead-free and ROHS compliant.
Notes:
1. Based on 2.7 GHz load pull data.
Functional Block Diagram
Applications
• W-CDMA / LTE
• Macrocell Base Station Driver
• Microcell Base Station
• Small Cell Final Stage
• Active Antenna
• Land Mobile and Military Radio Communications
• General Purpose Applications
Ordering Information
Part Number Description
QPD0020S2
Sample – 2 Pieces
QPD0020TR7
QPD0020EVB02
7” Reel – 500 Pieces
2.62 – 2.69 GHz Evaluation Board
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
1 of 11
www.qorvo.com
QPD0020
®
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
+165 V
Parameter
Min Typ Max Units
Breakdown Voltage (BVDG
Gate Voltage Range (VG1,2
Drain Voltage (VD1,2
Peak RF Input Power
)
Gate Voltage (VG)
Drain Voltage (VD)
Quiescent Current (IDQ
−2.7
+48
30
V
)
−7 to +2 V
+55 V
V
)
)
mA
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
29 dBm
VSWR Mismatch, P1dB Pulse (20%
Duty Cycle, 100 µs Width), T = +25°C
10:1
Storage Temperature
−65 to 150°C
Exceeding any one or a combination of the Absolute Maximum
Rating conditions may cause permanent damage to the device.
Extended application of Absolute Maximum Rating conditions to
device may reduce device reliability.
Electrical Specifications
Parameter
Conditions
Min
Typ
Max
Units
Operational Frequency Range
Quiescent Current
Gain
2620
2690
MHz
mA
dB
30
3 dB Compression
3 dB Compression
3 dB Compression
16.7
44.1
68.2
Power (PSAT
)
dBm
%
Drain Efficiency
Test conditions unless otherwise noted: VD = +48ꢀV, IDQ = 30 mA, Tꢀ=ꢀ+25°C, pulsed CW signal (10% duty cycle, 1 ms width) on a
single-ended reference design fixture tuned for 2620 – 2690 MHz.
Thermal Information
Parameter
Conditions
Values
Units
Thermal Resistance, Peak IR Surface TCASE = +105°C, TCH = 144°C
Temperature at Average Power (θJC) CW: PDISS = 7.4 W, POUT = 1.6 W
5.3
°C/W
Thermal Resistance, Peak IR Surface TCASE = +105°C, TCH = 169°C
5.9
°C/W
Temperature at Average Power (θJC)
CW: PDISS = 10.9 W, POUT = 5.6 W
Notes:
1. Thermal resistance is measured to package backside.
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
2 of 11
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QPD0020
®
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
QPD0020EVB02 Layout – 2.62 – 2.69 GHz Reference Design
QPD0020EVB02 Bill of Materials
Reference Des. Value Description
Manuf.
ATC
Part Number
600F3R0BT250XT
C1, C2
3 pF
Capacitor, 3 pF, ±0.1pF, 250 V, C0G, 0805
C3
2 pF
Capacitor, 2 pF, ±0.1 pF, 250 V, C0G, 0805
ATC
600F2R0BT250XT
C4, C7
C5, C6
C8, C9
10 pF Capacitor, 10 pF, ±1%, 250 V, C0G, 0805
4.7 µF Capacitor, 4.7 µF, ±20%, 50 V, X5R, 0805
10 µF Capacitor, 10 µF, ±20%, 50 V, STD, 2220
ATC
600F100FT250XT
Murata
TDK
GRT21BR61H475ME13L
C5750X7R1H106K230KB
United
Chemi-Con
C10
220 µF Capacitor, 220 µF, ±20%, 50 V, Electrolytic
EMVY500ADA221MJA0G
R1
R2
U1
47 Ω Resistor, 47 Ω, ±5%, 1/10 W, 0805
20 Ω Resistor, 20 Ω, ±5%, 1/10 W, 0805
Panasonic
Panasonic
Qorvo
ERJ-6GEYJ470
ERJ-6GEYJ200
QPD0020
–
35 W, 48 V, DC – 6 GHz, GaN RF Transistor
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
3 of 11
www.qorvo.com
QPD0020
®
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
QPD0020EVB02 Performance Plots
Gain vs. Output Power
VD = +48 V, IDQ = 30 mA
Drain Efficiency vs. Output Power
22
80
T = +25°C
VD = +48 V, IDQ = 30 mA
T = +25°C
Pulsed CW (Duty Cycle = 10%, Period = 1 ms)
Pulsed CW (Duty Cycle = 10%, Period = 1 ms)
21
20
19
18
17
16
15
14
70
60
50
40
30
20
10
0
2620 MHz
2655 MHz
2690 MHz
2620 MHz
2655 MHz
2690 MHz
27
29
31
33
35
37
39
41
43
45
27
29
31
33
35
37
39
41
43
45
Output Power (dBm)
Output Power (dBm)
Gain vs. Average Output Power
Drain Efficiency vs. Average Output Power
22
21
20
19
18
17
16
55
50
45
40
35
30
25
20
15
10
VD = +48 V, IDQ = 30 mA
VD = +48 V, IDQ = 30 mA
T = +25°C
T = +25°C
1C WCDMA, PAR = 8 dB @ 0.01% CCDF
1C WCDMA, PAR = 8 dB @ 0.01% CCDF
2620 MHz
2655 MHz
2690 MHz
2620 MHz
2655 MHz
2690 MHz
27 28 29 30 31 32 33 34 35 36 37 38 39 40
Average Output Power (dBm)
27 28 29 30 31 32 33 34 35 36 37 38 39 40
Average Output Power (dBm)
Peak Power vs. Average Output Power
ACPR vs. Average Output Power
47
46
45
44
43
42
41
40
39
38
37
36
35
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
VD = +48 V, IDQ = 30 mA
T = +25°C
VD = +48 V, IDQ = 30 mA
T = +25°C
1C WCDMA, PAR = 8 dB @ 0.01% CCDF
1C WCDMA, PAR = 8 dB @ 0.01% CCDF
2620 MHz
2655 MHz
2690 MHz
2620 MHz
2655 MHz
2690 MHz
27 28 29 30 31 32 33 34 35 36 37 38 39 40
Average Output Power (dBm)
27 28 29 30 31 32 33 34 35 36 37 38 39 40
Average Output Power (dBm)
Test conditions unless otherwise noted: VD = +48 V, IDQ = 30 mA, T = +25°C, pulsed CW signal (10% duty cycle, 1 ms period) on a
2620 – 2690 MHz reference design fixture.
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
4 of 11
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QPD0020
®
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
QPD0020EVB02 Performance Plots
Small Signal Gain vs. Frequency
Return Loss vs. Frequency
VD = +48 V, IDQ = 30 mA
25
2
VD = +48 V, IDQ = 30 mA
T = +25°C
T = +25°C
20
15
10
5
0
-2
-4
-6
0
-8
-5
-10
-12
-14
-16
-18
IRL
-10
-15
-20
-25
ORL
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
Test conditions unless otherwise noted: VD = +48 V, IDQ = 30 mA, T = +25°C, pulsed CW signal (10% duty cycle, 1 ms period) on a
2620 – 2690 MHz reference design fixture.
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
5 of 11
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QPD0020
®
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
Power-Matched Load Pull Performance
Frequency Source Impedance Load Impedance
P3dB
(dBm)
45.3
Drain Efficiency
G3dB
(dB)
18.5
(MHz)
2500
(Ω)
(Ω)
(%)
62.5
67.6
68.2
2.87 + j1.08
2.86 + j1.07
4.10 + j0.01
14.06 + j5.73
13.72 + j7.59
14.16 + j7.51
2600
45.3
18.5
2700
45.4
17.5
Test conditions unless otherwise noted: VD = +48ꢀV, IDQ = 30 mA, Tꢀ=ꢀ+25°C, pulsed CW (20% duty cycle, 100 µs width).
Efficiency-Matched Load Pull Performance
Frequency Source Impedance Load Impedance
P3dB
(dBm)
43.4
Drain Efficiency
G3dB
(dB)
20.4
(MHz)
2500
(Ω)
(Ω)
(%)
78.3
76.8
77.8
2.87 + j1.08
2.86 + j1.07
4.10 + j0.01
9.32 + j17.22
10.41 + j15.61
8.59 + j16.46
2600
43.8
19.6
2700
43.1
18.8
Test conditions unless otherwise noted: VD = +48ꢀV, IDQ = 30 mA, Tꢀ=ꢀ+25°C, pulsed CW (20% duty cycle, 100 µs width).
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
6 of 11
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QPD0020
®
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
Load Pull Contours
Test Conditions unless otherwise noted: VDꢀ=ꢀ+48ꢀV, IDQ = 30 mA, T = +25°C, pulsed CW (20% duty cycle, 100 µs width).
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
7 of 11
www.qorvo.com
QPD0020
®
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
Package Marking and Pin Configuration
Marking:
Qorvo Logo
Part Number – 0020
Date Code – YYWW
Production Lot Number - MXXX
Pin Number
1, 2
Label
NC
Description
Not Connected
3, 4
RF IN / VG
NC
RF Input / Gate Voltage
Not Connected
5, 6, 7, 8, 9, 10, 11, 12
13, 14
RF OUT / VD
NC
RF Output / Drain Voltage
Not Connected
15, 16, 17, 18, 19, 20
21
GND
Source to be connected to ground
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
8 of 11
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QPD0020
®
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
Package Dimensions
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. General tolerance is ±0.25.
3. Part is overmold encapsulated.
4. Contact plating is NiPdAu. Au thickness is 0.00254 to 0.01501 µm.
Bias Procedure
Bias-Up Procedure
1. Set VG to −4 V.
Bias-Down Procedure
1. Turn off RF signal.
2. Apply +48 V VD.
2. Turn off VD.
3. Slowly adjust VG until ID is set to 30 mA.
4. Apply RF.
3. Wait two (2) seconds to allow drain capacitor to discharge.
4. Turn off VG.
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
9 of 11
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QPD0020
®
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
Recommended Solder Temperature Profile
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
10 of 11
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QPD0020
®
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
Handling Precautions
Parameter
Rating
TBD
Standard
ANSI/ESDA/JEDEC Standard JS-001
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharged Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
TBD
ANSI/ESDA/JEDEC Standard JS-002
TBD
IPC/JEDEC Standard J-STD-020
Caution!
ESD-Sensitive Device
Solderability
Compatible with lead-free (260°C max. reflow temp.) soldering processes.
Package lead plating is NiPdAu. Au thickness is 0.00254 to 0.01501 µm.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
For technical questions and application information:
Email: BTSApplications@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
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such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
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EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2018 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.
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