QPM2637TR7 [QORVO]
9 â 10.5 GHz GaN T/R Module;
| 型号： | QPM2637TR7 |
| 厂家： | 
Qorvo |
| 描述： | 9 â 10.5 GHz GaN T/R Module |
| 文件： | 总18页 (文件大小：1097K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Product Description
The QPM2637 is a Gallium Nitride MMIC front-end module
(FEM) designed for X-Band radar applications within the
9-10.5 GHz range. The MMIC combines a T/R switch,
low-noise amplifier, and a power amplifier. The receive
path has dual-outputs which offer 21dB gain and 2.7dB
noise figure. The transmit path delivers 4W of saturated
power with 23dB large signal gain. The FEM is a high
robustness device with up to 4W of input power into the
ANT port eliminating the need for a limiter.
The QPM2637 is fabricated on Qorvo's QGaN25 0.25um
GaN-on-SiC process. The air-cavity EHS (embedded
copper heat slug) surface mount package, coupled with a
low thermal resistance die-attach process, allows the
QPM2637 to perform well at extreme case temperatures.
Its compact size supports tight lattice spacing
requirements needed for X-Band phased array radar
applications.
Functional Block Diagram
Product Features
• Frequency Range: 9ꢀ–ꢀ10.5ꢀGHz
• RX Noise Figure: 2.7 dB
• RX Small Signal Gain: 21 dB
• RX OTOI : 21 dBm
• TX Large Signal Gain: 23 dB
• TX Saturated Power: 36 dBm, Pulsed
• TX PAE: 38% @ 36 dBm Pout, Pulsed
• Package Dimensions: 6 x 5 x 1.8 mm
• Switching Time: < 35 nS
Performance is typical at room temperature.
Please reference electrical specification table and data
plots for more details.
Applications
Ordering Information
• Electronics Warfare (EW)
• Commercial and Military Radar
• Communications
Part No.
QPM2637
Description
QPM2637, Shipping Tray, Qty 10
QPM2637, Tape and Reel, Qty 250
QPM2637 Evaluation Board, Qty 1
QPM2637TR7
QPM2637EVB
Data Sheet Rev G, May 2021 | Subject to change without notice
- 1 of 18 -
www.qorvo.com
QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Normal Operating Conditions
Parameter
RX Drain Voltage (RXVD)
Value
10
Units
V
RX Drain Quiescent Current (RXIDQ)
RX Gate Control (RXVG)
30
mA
V
-2.5
TX Drain Voltage (TXVD)
28
V
TX Drain Quiescent Current (TXIDQ)
TX Gate Voltage (TXVG)
50
mA
V
-2.5
TX Gate Current (TXIDQ, normal operation)
Control Voltage (TXSW / RXSW)
Operating Temperature Range
25
mA
V
0 or -28
−55 to 100
°C
Gate voltage shown are typical, can be adjusted to set required drain current. Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all recommended operating conditions.
Absolute Maximum Ratings
Parameter
Drain Voltage (TXVD and RXVD)
Drain Current (TXID)
Drain Current (RXID)
Gate Voltage (RXVG, TXVG)
Gate Current (RXIG)
Gate Current (TXIG)
Switch Control Voltage (TXSW, RXSW)
Switch Control Current
Min Value
Max Value
Units
V
mA
mA
V
mA
mA
V
-
-
32
600
60
0
20
100
0
-
-5
-
-
-50
-
20
mA
-
-
RF Input Power (All RF ports, 85 °C)
Channel Temperature, TCH
Mounting Temperature (30 seconds)
Storage Temperature
36
dBm
°C
°C
225
260
150
-
-55
°C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions to
the device may reduce device reliability.
Data Sheet Rev G, May 2021 | Subject to change without notice
- 2 of 18 -
www.qorvo.com
QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Electrical Specifications, Receive
Test conditions unless otherwise noted: 25 °C, RXVD = 10 V, RXIDQ = 30 mA, RXSW = -28 V, TXSW = 0 V, PA off.
Data de-embedded to device reference plane
Parameter
Frequency
Min
9
Typical
Max
10.5
Units
GHz
dB
Small Signal Gain
Noise Figure
21
2.7
10
23
21
dB
Input Return Loss
Output Return Loss
Output TOI
dB
dB
dBm
Gate Leakage Current (RXVG Leak)
(RXVD = 10 V, RXVG = -3.7 V, RXSW = -28 V, TXSW = -28 V)
-0.55
-0.01
mA
1
Switch Settling Time, Rising Edge
5
nS
nS
2
Switch Settling Time, Falling Edge
35
Gain Temperature Coefficient
−0.038
dB/°C
1
2
From 50% trigger signal to 90 % of RF on (Trigger signal to switch driver to DUT)
From 50% trigger signal to 10 % of RF off (Trigger signal to switch driver to DUT)
Electrical Specifications, Transmit
Test conditions unless otherwise noted: 25 °C, TXVD = 28 V, TXIDQ = 50 mA, RXSW = 0 V, TXSW = -28 V, LNA off.
Data de-embedded to device reference plane
Parameter
Frequency
Min
9
Typical
Max
10.5
Units
GHz
dB
Large Signal Gain
Input Return Loss
Output Return Loss
Saturated Output Power
23
15
8
dB
dB
1
36
42
30
dBm
PAE at Saturated Power (@ 13 dBm Pin)
%
dBc
Harmonic Suppression up to Saturated Power
Gate Leakage Current (TXVG Leak)
(TXVD = 10 V, RXVG = -3.7 V, RXSW = -28 V, TXSW = -28 V)
-2.2
-0.01
mA
2
Switch Settling Time, Rising Edge
30
8
nS
nS
3
Switch Settling Time, Falling Edge
Gain Temperature Coefficient
−0.045
dB/°C
1. Power and PAE measured with DC drain pulsed, PW = 200 uS, Duty Cycle = 10%
2. From 50% trigger signal to 90 % of RF on (Trigger signal to switch driver to DUT)
3. From 50% trigger signal to 10 % of RF off (Trigger signal to switch driver to DUT)
Data Sheet Rev G, May 2021 | Subject to change without notice
- 3 of 18 -
www.qorvo.com
QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Performance Plots,ꢀReceive Channel
Test Conditions unless otherwise stated: RXVD = 10 V, RXIDQ = 30 mA, RXSW = - 28 V, TXSW = 0 V, PA off, 25C
Data de-embedded to device reference plane, Port 1: Common Port, Port 2: RXOUT1, Port 3: RXOUT2
RX1 Gain vs. Frequency vs. Temp.
RX2 Gain vs. Frequency vs. Temp.
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
10
-55 C
- 25C
+25 C
10
+100 C
11
-55 C
- 25C
+25 C
10
+100 C
11
7
8
9
12
7
8
9
12
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
RX Output Isolation vs. Freq. vs. Temp.
0
0
-55 C
-25 C
+25 C
+100 C
-55 C
- 25 C
+25 C
+100 C
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
7
8
9
10
11
12
7
8
9
10
11
12
Frequency (GHz)
Frequency (GHz)
RXOUT1 Return Loss vs. Freq. vs. Temp.
RXOUT2 Return Loss vs. Freq. vs. Temp.
0
-5
0
-5
-55 C
- 25 C
+25 C
+100 C
-55 C
- 25 C
+25 C
+100 C
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
7
8
9
10
11
12
7
8
9
10
11
12
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev G, May 2021 | Subject to change without notice
- 4 of 18 -
www.qorvo.com
QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Performance Plots,ꢀReceive Channel
Test Conditions unless otherwise stated: RXVD = 10 V, RXIDQ = 30 mA, RXSW = -28 V, TXSW = 0 V, PA off, 25C
Data de-embedded to device reference plane, Port 1: Common Port, Port 2: RXOUT1, Port 3: RXOUT2
RX1 Gain vs. Frequency vs. VD
RX2 Gain vs. Frequency vs. VD
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
10
8V
10V
12V
10
8V
10V
12V
7
8
9
11
12
12
12
7
8
9
10
11
12
12
12
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Freq. vs. VD
RX Output Isolation vs. Freq. vs. VD
0
0
8V
10V
12V
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
8V
10V
12V
10
7
8
9
11
7
8
9
10
11
Frequency (GHz)
Frequency (GHz)
RXOUT1 Return Loss vs. Freq. vs. VD.
RXOUT2 Return Loss vs. Freq. vs. VD
0
-5
0
-5
8V
10V
12V
8V
10V
12V
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
7
8
9
10
11
7
8
9
10
11
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Performance Plots, Receive Channel
Test Conditions unless otherwise stated: VD = 10 V, RXIDQ = 30 mA, RXSW = -28 V, TXSW = 0 V,
10 MHz tone spacing, Pin = - 20dBm, PA off. Data de-embedded to device reference plane, 25C
NF vs Freq vs Temp
NF vs Freq vs Voltage
5.0
4.5
4.0
3.5
3.0
2.5
2.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
8V
10V
12V
+ 25 C
+ 100C
7.0
8.0
9.0
10.0
11.0
12.0
7.0
8.0
9.0
10.0
11.0
12.0
Freq (GHz)
Freq (GHz)
IMD3 vs Pout vs Freq
0
-10
-20
-30
-40
-50
-60
-70
-80
9.2 GHz
9.7 GHz
10.2 GHz
-25
-20
-15
-10
-5
0
5
10
Pout (dBm)
OTOI vs Freq vs Temp
OTOI vs Freq vs Voltage
24
24
22
20
18
16
14
12
10
22
20
18
16
14
12
10
8 V
9.4
10 V
12 V
10.0
- 25 C
9.4
+ 25C
+ 100 C
10.0
9.0
9.2
9.6
9.8
10.2
10.4
9.0
9.2
9.6
9.8
10.2
10.4
Freq (GHz)
Freq (GHz)
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Performance Plots, Receive Channel
Test Conditions unless otherwise stated: VD = 10 V, RXIDQ = 30 mA, Pin = 5 dBm RXSW = -28 V, TXSW = 0 V, PA off
Data de-embedded to device reference plane, 25C
RX Psat vs Freq vs Voltage
RX Psat vs Freq vs Temp
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
- 25 C
+ 25 C
+ 100 C
10.5
8 V
10 V
12 V
8.5
9.0
9.5
10.0
10.5
11.0
8.5
9.0
9.5
10.0
11.0
Freq (GHz)
Freq (GHz)
Output Power vs Pin vs Freq
Power Gain vs Pin vs Freq
14
12
10
8
25
20
15
10
5
6
4
2
0
-2
-4
-6
9.2 GHz
-15
9.7 GHz
-10
10.2 GHz
-5
9.2 GHz
-15
9.7 GHz
-10
10.2 GHz
-5
0
-25
-20
0
5
-25
-20
0
5
Input Power (dBm)
Input Power (dBm)
Drain Current vs Pin vs Freq
55
50
45
40
35
30
25
9.2 GHz
-15
9.7 GHz
-10
10.2 GHz
-5
20
-25
-20
0
5
Input Power (dBm)
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Performance Plots, Transmit Channel
Test Conditions unless otherwise stated: TXVD = 28 V, TXIDQ = 50 mA, TXVG fixed over temperature
RXSW = 0V, TXSW = -28 V, LNA off. Data de-embedded to device reference plane, 25C
Input Return Loss vs. Freq. vs. Temp.
Gain vs. Frequency vs. Temp.
0
-5
34
32
30
28
26
24
22
20
18
16
14
12
10
-55 C
-25 C
+25 C
+100 C
-10
-15
-20
-25
-30
-55 C
9.0
- 25C
9.5
+25 C
10.0
+100 C
10.5
8.5
11.0
8.5
9
9.5
10
10.5
11
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
Isolation vs. Frequency vs. Temp.
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-5
-10
-15
-20
-25
-30
-55 C
9
- 25 C
9.5
+25 C
10
+100 C
10.5
-55 C
- 25C
9.5
+25 C
10
+100 C
10.5
8.5
11
8.5
9
11
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev G, May 2021 | Subject to change without notice
- 8 of 18 -
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Performance Plots, Transmit Channel
Test Conditions unless otherwise stated: VD = 28 V, TXIDQ = 50 mA, TXVG fixed over temperature
RXSW = 0V, TXSW = -28 V, LNA off. Data de-embedded to device reference plane, 25C
Gain vs. Frequency vs. VD
Input Return Loss vs. Freq. vs. VD
0
-5
34
32
30
28
26
24
22
20
18
16
14
12
10
20 V
25 V
28 V
30 V
32 V
-10
-15
-20
-25
-30
20 V
9.0
25 V
9.5
28 V
10.0
30 V
32 V
10.5
8.5
9
9.5
10
10.5
11
8.5
11.0
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Freq. vs. VD
Isolation vs. Frequency vs. VD
0
-5
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-15
-20
-25
-30
20 V
9
25 V
28 V
30 V
32 V
10.5
20V
25 V
9.5
28 V
30 V
32 V
10.5
8.5
9
10
11
8.5
9.5
10
11
Frequency (GHz)
Frequency (GHz)
Noise Figure vs. Freq. vs. Temp
Noise Figure vs. Freq. vs. Voltage
10
9
10
9
8
8
7
7
6
6
20 V
9.0
25 V
28 V
30 V
32 V
10.5
+ 25C
9.5
+ 100C
10.0
5
5
8.5
9.0
10.5
11.0
8.5
9.5
Freq (GHz)
10.0
11.0
Frequency (GHz)
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Performance Plots, Transmit Channel
Test Conditions unless otherwise stated: TXVD = 28 V, TXIDQ = 50 mA, TXVG fixed over temperature, RXSW = 0V
TXSW = -28 V, Pin = 13 dBm, PW = 200uS, DC = 10%, LNA off. Data de-embedded to device reference plane, 25C
Output Power vs. Freq. vs. Temp
Output Power vs. Freq. vs. Voltage
40
38
36
34
32
30
40
38
36
34
32
30
20V
9.5
25V
28V
10
30V
32V
10.5
- 25C
+ 25 C
10
+100C
9
11
9
9
9
9.5
10.5
11
11
11
Frequency (GHz)
Frequency (GHz)
PAE vs. Freq. vs. Voltage
PAE vs. Freq. vs. Temp
46
44
42
40
38
36
34
32
30
46
44
42
40
38
36
34
32
30
- 25C
+ 25 C
10
+ 100 C
10.5
20V
9.5
25V
28V
10
30V
32V
10.5
9.5
9
11
Frequency (GHz)
Frequency (GHz)
Power Gain vs. Freq. vs. Temp
Power Gain vs. Freq. vs. Voltage
26
24
22
20
18
16
26
24
22
20
18
16
- 25C
+ 25 C
10
+ 100 C
10.5
20V
9.5
25V
28V
10
30V
32V
10.5
9.5
9
11
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Performance Plots, Transmit Channel
Test Conditions unless otherwise stated: TXVD = 28 V, TXIDQ = 50 mA, RXSW = 0V, TXSW = -28 V
PW = 200 uS, DC = 10%, LNA off. Data de-embedded to device reference plane, 25C
Gain vs. Pin. vs. Frequency
Output Power vs. Pin. vs. Frequency
38
36
34
32
30
28
26
24
22
20
18
38
36
34
32
30
28
26
24
22
20
18
9 GHz
9.5 GHz
10 GHz
11 GHz
9 GHz
9.5 GHz
10 GHz
10.5 GHz
8 10 12 14
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
-10 -8 -6 -4 -2
0
2
4
6
Pin (dBm)
Pin (dBm)
Drain Current vs. Pin vs. Frequency
PAE vs. Pin vs. Frequency
450
400
350
300
250
200
150
100
50
50
45
40
35
30
25
20
15
10
5
9 GHz
9.5 GHz
10 GHz
4
10.5 GHz
10 12 14
9 GHz
9.5 GHz
10 GHz
10.5 GHz
8 10 12 14
0
0
-10 -8 -6 -4 -2
0
2
4
6
-10 -8 -6 -4 -2
0
2
6
8
Pin (dBm)
Pin (dBm)
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Performance Plots, Transmit Channel
Test Conditions unless otherwise stated: TXVD = 28 V, TXIDQ = 50 mA, TXVG fixed over temperature
RXSW = 0V, TXSW = -28 V, Freq: 10.2 GHz, LNA off. Data de-embedded to device reference plane, 25C
3rd Harmonic vs. Pout. vs. Freq
2nd Harmonic vs. Pout. vs. Freq
-20
-25
-30
-35
-40
-45
-50
-55
-60
-20
-25
-30
-35
-40
-45
-50
-55
-60
9.2 GHz
9.7 GHz
10.2 GHz
9.2 GHz
9.7 GHz
10.2 GHz
16 18 20 22 24 26 28 30 32 34 36 38
Output Power (dBm)
16 18 20 22 24 26 28 30 32 34 36 38
Output Power (dBm)
2nd Harmonic vs. Pout. vs. Temp
3rd Harmonic vs. Pout. vs. Temp
-20
-25
-30
-35
-40
-45
-50
-55
-60
-20
-25
-30
-35
-40
-45
-50
-55
-60
- 25C
+ 25C
+ 100C
- 25C
+ 25C
+ 100C
16 18 20 22 24 26 28 30 32 34 36 38
Output Power (dBm)
16 18 20 22 24 26 28 30 32 34 36 38
Output Power (dBm)
2nd Harmonic vs. Pout. vs. Voltage
3rd Harmonic vs. Pout. vs. Voltage
-20
-25
-30
-35
-40
-45
-50
-55
-60
-20
-25
-30
-35
-40
-45
-50
-55
-60
20 V
25 V
28 V
30 V
32 V
20 V
25 V
28 V
30 V
32 V
16 18 20 22 24 26 28 30 32 34 36 38
Output Power (dBm)
16 18 20 22 24 26 28 30 32 34 36 38
Output Power (dBm)
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Application Circuit
Bias-up Procedure
Bias-down Procedure
1. Set TXVD current limit to 600 mA, RXVD current limit
to 60 mA, RXVG current limit to 10 mA, TXVG current
limit to 100 mA, switch control current limit to 10 mA
2. Set RXVG and TXVG to − 5 V
1. Turn off RF signal
2. Set RXVG, TXVG to −5 V
(TXVG will draw ~50mA current)
3. Set TXSW = - 28 V (or 0 V), RXSW = 0 V (or – 28 V)
for TX (RX) channel operation
3. Set RXVD = 0 V, TXVD = 0 V
4. Set RXVD = +10 V, TXVD = +28 V
4. Turn off drain supply
5. Turn off TXSW, RXSW
6. Turn off gate supply
5. Adjust TXVG, RXVG to achieve required drain
current for TX and RX ( −2.5 V Typical)
6. Apply RF signal
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Mechanical Drawing & Pad Description
Dimensions in mm. Package lead finish: Ni / Au plating with minimum gold thickness of 0.1 um
Part Marking: QPM2637: Part Number, YY = Part Assembly Year, WW = Part Assembly Week, MXXX = Batch ID
Pin Number
1, 2, 3, 4, 6, 7, 15, 17, 19, 21, Slug
Label
GND
Description
GROUND
5
ANT
Common Port to Antenna
Transmit Drain Supply
Transmit Gate Control
Receive Switch Control
Transmit Switch Control
Receive Output 2
9
TXVD
TXVG
RXSW
TXSW
RXOUT2
TXIN
12
13
14
16
18
Transmit Input
20
RXOUT1
RXVD
RXVG
N/C
Receive Output 1
24
Receive Drain Supply
Receive Gate Control
No Internal Connections
27
8, 10, 11, 22, 23, 25, 26, 28
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Evaluation Board and Assembly
RF Layer is 0.008” thick Rogers Corp. RO4003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the
connector interface is optimized for the Southwest Microwave end launch connector 1492-04A-5.
Ref. Des.
Component Value
Manuf. Part Number
C3, C6, C11, C17 SMT Cap.
CAP, 0402 1000pF +/-10% 50V 0402 X7R ROHS
CAP, 1206 1.0uF +/-10% 50V X7R ROHS
RES, 0402 10 OHM, 5% 50V, ROHS
Various
C1, C4, C13, C19 SMT Cap.
Various
Various
R1, R2, R3, R4,
SMT Res.
R7, R8, R11, R12
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Thermal and Reliability Information
Parameter
Values
Units
Conditions
TX Channel, Thermal Resistance (θJC) (1,2)
6.92
°C/W
TBASE = 100°C, TXVD = 28 V, TXIDQ =50 mA
TXID_DRIVE = 376 mA, PIN = 13 dBm,
Channel Temperature (TCH)
RX Channel, Thermal Resistance (θJC) (1)
Channel Temperature (TCH)
Notes:
145.70
12.37
103.71
°C
°C/W
°C
Freq = 10GHz, PDISS = 6.60 W (PA only, LNA off)
TBASE = 100°C, RXVD = 10 V, RXIDQ =30 mA
PDISS = 0.3 W (LNA only, PA off)
1. Thermal resistance is referenced to package backside.
2. Transmit Channel, RF drive is under pulse drain supply condition, PW = 200 uS, DC = 10%, PDISS and ID_DRIVE are peak values.
3. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates.
Assembly Notes
1. Compatible with both lead-free (260°C peak reflow temp.) and tin/lead (245°C peak reflow temp.) soldering
processes.
2. This package is air-cavity and non-hermetic, and therefore cannot be subjected to aqueous washing. The use of no-
clean solder to avoid washing after soldering is highly recommended.
3. Solder rework not recommended.
Recommended Soldering Temperature Profile
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Tape and Reel Information
Standard T/R size = 250 pieces on a 7” reel.
Distance Between
Centerline (mm)
Carrier Tape Cover
(mm)
Carrier (mm)
Material
Vendor
Cavity (mm)
Length
direction
(P2)
Width
Direction
(F)
Length Width
Depth
(K0)
Pitch
(P1)
Width
(W)
Width
(W)
Vendor P/N
(A0)
(B0)
Advantek BCA389-A
5.30
6.30
2.1
8.0
2.00
5.50
12.0
9.20
Data Sheet Rev G, May 2021 | Subject to change without notice
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QPM2637
9 –ꢀ10.5ꢀGHz GaN T/R Module
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
TBD
ESDAꢁ/ꢁJEDEC JS-001-2012
ESDAꢁ/ꢁJEDEC JS-002-2014
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) TBD
JEDEC standard IPC/JEDEC
J-STD-020
MSLꢀ–ꢀConvection Reflow 260ꢀ°C
TBD
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
Important Notice
The information contained in this Data Sheet and any associated documents (“Data Sheet Information”) is believed to be reliable;
however, Qorvo makes no warranties regarding the Data Sheet Information and assumes no responsibility or liability whatsoever for the
use of said information. All Data Sheet Information is subject to change without notice. Customers should obtain and verify the latest
relevant Data Sheet Information before placing orders for Qorvo® products. Data Sheet Information or the use thereof does not grant,
explicitly, implicitly or otherwise any rights or licenses to any third party with respect to patents or any other intellectual property whether
with regard to such Data Sheet Information itself or anything described by such information.
DATA SHEET INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting
the generality of the foregoing, Qorvo® products are not warranted or authorized for use as critical components in medical, life-saving,
or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death. Applications described in the Data Sheet Information are for illustrative purposes only. Customers are responsible for validating
that a particular product described in the Data Sheet Information is suitable for use in a particular application.
© 2021 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be
reproduced or distributed, in whole or in part, without the express written consent of Qorvo US, Inc. | QORVO® is a registered
trademark of Qorvo US, Inc.
Data Sheet Rev G, May 2021 | Subject to change without notice
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