RFCM3328SR [QORVO]
45-1218 MHz GaAs/GaN Power Doubler Module;型号: | RFCM3328SR |
厂家: | Qorvo |
描述: | 45-1218 MHz GaAs/GaN Power Doubler Module |
文件: | 总8页 (文件大小:681K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RFCM3328
®
45-1218 MHz GaAs/GaN Power Doubler Module
Product Overview
The RFCM3328 is a Power Doubler amplifier SMD
Module. The part employs GaAs pHEMT die and GaN
HEMT die, has high output capability, and is operated
from 45 MHz to 1218 MHz. It provides excellent linearity
and superior return loss performance with low noise and
optimal reliability.
RFCM3328
9 pin, 9.0 mm x 8.0 mm x 1.375 mm
DC current of the device can be externally adjusted for
optimum
distortion
performance
versus
power
consumption over a wide range of output level.
Key Features
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all Terminations
Extremely High Output Capability
25 dB Min. Gain at 1218 MHz
480 mA Max. at 24 VDC
Temperature Sensing Feature
Functional Block Diagram
Current
Setting
Temperature
Sensing
V+
INPUT
OUTPUT
Applications
45 MHz to 1218 MHz CATV Amplifier Systems
RFCM3328
Ordering Information
Part No.
Description
RFCM3328SB
RFCM3328SQ
RFCM3328SR
RFCM3328TR7
RFCM3328TR13
Sample bag with 5 pieces
Sample bag with 25 pieces
7” Reel with 100 pieces
7” Reel with 500 pieces
13” Reel with 1000 pieces
RFCM3328PCBA-410 Fully Assembled Evaluation Board
Data Sheet Rev.B, June 28, 2016 | Subject to change without notice
1 of 8
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RFCM3328
®
45-1218 MHz GaAs/GaN Power Doubler Module
Absolute Maximum Ratings
Parameter
Rating
RF Input Voltage (single tone; on evaluation board)
75 dBmV
DC Supply Over-Voltage (5 minutes)
30 V
Storage Temperature
−40 to +100ꢀ°C
−30 to +110ꢀ°C
Operating Mounting Base Temperature
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the
device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability.
Electrical Specifications
Parameter
Conditions(1)
Min
45
Typ
Max
1218
24.0
26.5
3.0
Units
MHz
dB
Operational Frequency Range
Power Gain
45 MHz
23.0
25.0
1.0
23.5
25.5
2.0
1218 MHz
dB
Slope(2)
45 MHz to 1218 MHz
45 MHz to 1218 MHz (Peak to Valley)
45 MHz to 320 MHz
dB
Flatness of Frequency Response
Input Return Loss
1.5
dB
-20
-19
-18
-16
-15
-18
-17
-15
dB
320 MHz to 640 MHz
dB
640 MHz to 870 MHz
dB
870 MHz to 1000 MHz
1000 MHz to 1218 MHz
45 MHz to 320 MHz
dB
dB
Output Return Loss
dB
320 MHz to 640 MHz
dB
640 MHz to 1218 MHz
50 MHz to 1218 MHz
dB
Noise Figure
2.5
470
3.7
-80
-76
-80
58
3.5
dB
Total Current Consumption (DC)
480
mA
K/W
dBc
dBc
dBc
dB
Thermal Resistance
Junction to Mounting Base
CTB
XMOD
CSO
CIN
VO = 61 dBmV at 1218 MHz,
22 dB extrapolated tilt,
79 analog channels plus
111 digital channels (-6 dB offset)(3)(5)
-74
-72
-74
55
CTB
VO = 62 dBmV at 1000 MHz,
18 dB extrapolated tilt,
79 analog channels plus
75 digital channels (-6 dB offset)(4)(5)
-73
-68
-68
55
dBc
dBc
dBc
dB
XMOD
CSO
CIN
Notes:
1. Test conditions unless otherwise noted: V+=24 V, TMB=30 °C, ZS=ZL=75 Ω, IDC=IDC typical.
2. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
3. 79 analog channels, NTSC frequency raster: 55.25 MHz to 547.25 MHz, +39 dBmV to +48.3 dBmV tilted output level,
plus 111 digital channels, -6 dB offset relative to the equivalent analog carrier.
4. 79 analog channels, NTSC frequency raster: 55.25 MHz to 547.25 MHz, +44 dBmV to +53.4 dBmV tilted output level,
plus 75 digital channels, -6 dB offset relative to the equivalent analog carrier.
5. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by ANSI/SCTE 6.
Composite Triple Beat (CTB) - The CTB parameter is defined by ANSI/SCTE 6.
Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of
the carrier being tested.
Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
Data Sheet Rev.B, June 28, 2016 | Subject to change without notice
2 of 8
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RFCM3328
®
45-1218 MHz GaAs/GaN Power Doubler Module
RFCM3328 Current Adjustment
The RFCM3328 can be operated over a wide range of current to provide maximum required performance with minimum
current consumption. Changing the value of resistor R3 on application circuit allows a variation of the current between
470 mA and 350 mA (typ.). Within the recommended range of current between 470 mA and 370 mA gain (S21) change is
less than 0.2 dB (typ.) and noise figure change is less than 0.2 dB (typ.).
Device Current versus Resistor R3 (typical values)
I [mA]
480
460
440
Device Current [mA], typical
R3 [Ω]
1500
1350
1200
1050
420
400
380
360
340
470
430
390
350
Test conditions: V+=24 V, TMB=30 °C, ZS=ZL=75 Ω
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
R3 [Ω]
Device Current versus Distortion Degradation (typical values)
I [mA]
480
460
440
420
CTB
400
CIN
380
360
340
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
CTB and CIN degradation [dB]
Test condition:
V+=24 V, TMB=30 °C, ZS=ZL=75 Ω; VO = 61 dBmV at 1218 MHz, 22 dB extrapolated tilt,
79 analog channels plus 111 digital channels (-6 dB offset)
Data Sheet Rev.B, June 28, 2016 | Subject to change without notice
3 of 8
www.qorvo.com
RFCM3328
®
45-1218 MHz GaAs/GaN Power Doubler Module
RFCM3328 Temperature Sensing Feature
The RFCM3328 provides an internal NTC resistor for temperature sensing. This resistor is located right next to the output
transistor stage. Within the application circuit the NTC is part of a voltage divider. The output voltage of the voltage divider
(Vt) can be correlated to the module backside temperature.
Module Backside Temperature versus Vt (typical values)
Temperature [°C]
120
110
100
90
80
70
60
50
40
30
20
750
1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000
Vt [mV]
Data Sheet Rev.B, June 28, 2016 | Subject to change without notice
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RFCM3328
®
45-1218 MHz GaAs/GaN Power Doubler Module
Evaluation Board Schematic
FB1
Bead 60Ω
V+
R1
5.1kΩ
C1
220pF
D1
R13
3.3kΩ
Vt
TGL34-33A
R2
3kΩ
C13
4.7nF
D2
MM3Z5V6T1
GND
R3
1.5kΩ
C15
0.1pF
C17
DNI
C8
4.7nF
C3
4.7nF
T1
T2
RFXF0008
9
8
7
6
5
RFXF0006
RF OUT +
Rt
1
2
3
4
C4
1.2pF
T3
RFXF0009
3
4
5
2
1
RF IN +
GND
R5
1kΩ
3
4
2
1
3
4
2
1
C2
4.7nF
C7
4.7nF
R4
5.6Ω
U1
RFCM3328
V+
GND
RF IN
RF OUT
R6
1kΩ
GND
R7
DNI
R10
DNI
C6
4.7nF
RF IN -
C9
DNI
C14
DNI
C10
C11
C19
DNI
C12
0.5pF
RF OUT -
0.5pF
0.5pF
C5
1.2pF
R8
DNI
R11
DNI
C16
0.1pF
C18
DNI
back
side
R9
DNI
R12
DNI
Evaluation Board Assembly Drawing
Note: The ground plane of the RFCM3328 module should be soldered onto a board equipped with as many thermal vias as possible.
Underneath this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module DC
power (up to 11.3 Watts). In any case the module backside temperature should not exceed 110 °C.
Data Sheet Rev.B, June 28, 2016 | Subject to change without notice
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RFCM3328
®
45-1218 MHz GaAs/GaN Power Doubler Module
Evaluation Board Bill of Materials (BOM)
Reference Des.
Value
n/a
Description
Printed Circuit Board
Manuf.
Qorvo
Part Number
n/a
C1
PI844A
220 pF
4.7 nF
1.2 pF
DNI
Cap., 0402, 50V, NP0/C0G
Cap., 0402, ±10%, 50V, X7R
Cap., 0402, ±0.25pF, 50V, NP0/C0G
Cap., 0402, NP0/C0G(1)
various
C2, C3, C6, C7, C8, C13
various
C4, C5
various
C9, C14, C17, C18, C19
various
C10, C11, C12
0.5 pF
0.1 pF
5.1 kΩ
3 kΩ
Cap., 0402, ±0.1pF, 50V, NP0/C0G(1)
Cap., 0402, ±0.05pF, 50V, NP0/C0G(1)
Res., 0603, ±1%, TK100
various
C15, C16
various
R1
various
R2
Res., 0402, ±1%, TK100
various
R3
1.5 kΩ
5.6 Ω
1 kΩ
Res., 0402, ±1%, TK100
various
R4
Res., 0402, ±1%, TK200
various
R5, R6
Res., 0402, ±1%, TK100
various
R7, R8, R9, R10, R11, R12
DNI
Res., 0402, 0Ω(1)
various
R13
FB1
D1
D2
T1
3.3 kΩ
Res., 0402, ±1%, TK100
various
60 Ω @ 100 MHz Impedance Bead
Taiyo Yuden
Diotec
BK 1608HS600-T
TGL34-33A
MM3Z5V6T1G
RFXF0006
TGL34-33A
5.6 V
Transient Voltage Suppressor Diode
Zener Diode
Transformer
Transformer
Transformer
DUT
ON Semiconductor
Qorvo
RFXF0006
RFXF0008
RFXF0009
RFCM3328
T2
Qorvo
RFXF0008
T3
Qorvo
RFXF0009
U1
Qorvo
RFCM3327
Note:
1. Optional to improve matching in application.
Pin Out
RF OUT +
9
8
7
6
5
RF IN +
GND
1
2
3
4
Rt
GND
Top View
6 of 8
V+
GND
GND
RF OUT -
RF IN -
Data Sheet Rev.B, June 28, 2016 | Subject to change without notice
www.qorvo.com
RFCM3328
®
45-1218 MHz GaAs/GaN Power Doubler Module
Package Outline and Branding Drawing
(Dimensions in millimeters)
9.000±0.100
3.700
Pin1
PIN 1 Indicator
A
A
A
A
A
A
A
A
A
2x 2.000
1.000
1.000
0.650
0.000
0.650
RFCM3328
YYWW
Trace Code
DATA CODE
(YEAR/WEEK)
2x 2.000
3.700
A= 0.600 x 0.600 mm
molding cap
substrate
Pin Names and Descriptions
Pin
1
Name
RF IN +
GND
Description
RF AMP Positive Input
2, 3, 6
Ground pins
4
5
7
8
9
RF IN -
RF OUT -
V+
RF AMP Negative Input
RF AMP Negative Output
Supply Voltage, +24V
Rt
NTC Output for Temperature Sensing
RF AMP Positive Output
RF OUT +
Data Sheet Rev.B, June 28, 2016 | Subject to change without notice
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RFCM3328
®
45-1218 MHz GaAs/GaN Power Doubler Module
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
Class 1A
ESDAꢁ/ꢁJEDEC JS-001-2012
JEDEC JESD22-C101F
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) Class C1
MSLꢀ–ꢀMoisture Sensitivity Level
Level 3
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: NiPdAu
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS
DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS
WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR
OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in
medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe
personal injury or death.
Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev.B, June 28, 2016 | Subject to change without notice
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