RFPA2172PCK-411 [QORVO]
ISM Band 3.6V, 250mW AMP with Analog Gain Control;
| 型号： | RFPA2172PCK-411 |
| 厂家： | 
Qorvo |
| 描述： | ISM Band 3.6V, 250mW AMP with Analog Gain Control ISM频段 |
| 文件： | 总12页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFMD + TriQuint = Qorvo
RFPA2172
RFPA2172
ISM Band 3.6V, 250mW AMP with
Analog Gain Control
Package: QFN, 16-pin,
4.0mm x 4.0mm
The RFPA2172 is a medium-power high efficiency amplifier IC targeting
3.6 V handheld systems. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and
has been designed for use as the final RF amplifier in 2.45 GHz
Bluetooth applications and frequency hopping/direct sequence spread-
spectrum cordless telephones or other applications in the 902 MHz to
928 MHz ISM band. The device is packaged in a compact 4 mm x 4 mm
QFN. The device features analog gain control to optimize transmit
power while maximizing battery life in portable equipment requiring up to
100 mW transmit power at the antenna port.
Features
■
■
■
■
■
■
23.5dBm Typical Output Power
0dB to 28dB Variable Gain
45% Efficiency at Max Output
On-Board Power Down Mode
2.4GHz to 2.5GHz Operation
902MHz to 928MHz Operation
Applications
■
Bluetooth™ PA
1
16
15
14
13
■
2.4GHz to 2.5GHz ISM Band
Systems
2
3
4
12
11
10
GND
RF OUT
RF OUT
GND
■
■
■
■
902MHz to 928MHz ISM Band
Systems
RF IN
GND
3.6V Spread-Spectrum Cordless
Phones
Bias
7
Portable Battery-Powered
Equipment
5
6
8
9
Spread-Spectrum Systems
Functional Block Diagram
Ordering Information
RFPA2172
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
Standard 5000 piece reel
RFPA2172SR
RFPA2172TR13
RFPA2172TR13-5K
RFPA2172PCK-410
Fully assembled evaluation board tuned for
902MHz to 928MHz with 5 piece bag
RFPA2172PCK-411
Fully assembled evaluation board tuned for
2.4GHz to 2.5GHz with 5 piece bag
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Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
1 of 12
RFMD + TriQuint = Qorvo
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Rating
-0.5 to +6.0
+10
Unit
VDC
mA
VDC
dBm
°C
Supply Voltage (RF off)
APC Current (Maximum)
Control Voltage (VPD)
Input RF Power
-0.5 to +6.0
+10
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of antimony
trioxide in polymeric materials and red
phosphorus as a flame retardant, and
<2% antimony in solder.
Operating Case Temperature
Storage Temperature
-40 to +85
-55 to +155
°C
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Specification
Parameter
Unit
Condition
Min
Typ
Max
Overall
T= 25°C, VCC= 3.6V, VPD= 3.6V, VAPC= 3.0V
Usable Frequency Range
Input Impedance
400 to 2500
50
MHz
Ω
Input VSWR
1.8:1
Without Input Match
Output Load VSWR
<10:1
<6:1
0≤VAPC≤3.0V
0≤VAPC≤3.6V
2.45GHz Operation
Freq= 2.4GHz to 2.5GHz, PIN= 0dBm
Operating Frequency
Maximum Output Power
Total Efficiency
2.4 to 2.5
+23.5
45
GHz
dBm
%
22
24.5
Reverse Isolation
Second Harmonic
Third Harmonic
-45
dB
-38
-34
-40
dBc
dBc
dBc
-45
All Other Spurious
-50
Gain Control Voltage
High Gain
0 to VCC
V
23.5
dB
dB
VAPC= 3.6V, VCC= 3.6V, PIN= 0dBm
VAPC= 0V, VCC= 3.6V, PIN= 0dBm
Low Gain
-9
900MHz Operation
Freq= 902MHz to 928MHz, PIN= 3.0dBm
Operating Frequency
Maximum Output Power
Total Efficiency
902 to 928
+26
MHz
dBm
%
58
Reverse Isolation
Second Harmonic
Third Harmonic
-35
dB
-40
dBc
dBc
dBc
V
-40
All Other Spurious
Gain Control Voltage
Gain Control Slope
Gain
-50
0 to VCC
20
dB/V
dB
0 to 28
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Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
2 of 12
RFPA2172
RFMD + TriQuint = Qorvo
Specification
Typ
Parameter
Unit
Condition
Min
Max
Power Supply
Power Supply Voltage
Power Supply Current
3.0
3.6
155
25
V
mA
mA
VCC= 3.6V , VAPC= 3.6V, PIN= -3dBm, VPD= 3.6V
Power Supply Current – Low
Power Mode
T= 25°C, VCC= 3.6V, VPD= 3.6V, VAPC= 0V, PIN = 0dBm
Idle Current
Power Down Current
I(PD)
35
2.8
65
10
mA
µA
VAPC= 3.6V, PIN≤ -30dBm, VPD= 3.6V
VCC= 3.6V , VAPC= 0V, VPD= 0V total ICC
VCC= 3.6V , VPD= 3.6V into PD pin
VCC= 3.0V , VPD= 3.0V into PD pin
4.5
mA
mA
I(PD)
2.25
Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
3 of 12
RFPA2172
RFMD + TriQuint = Qorvo
Application Schematic 915MHz
VCC
22 nF
8.2 nH
1
16
15
14
13
12
2.4 pF
3.9 nH
22 nF
VCC
2
3
4
22 nF
RF IN
11
10
22 nF
4 pF
RF OUT
2.7 nH
Bias
7
5
6
8
9
RAPC
3 k
22 nF
22 nF
VPD
VAPC
Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
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RFPA2172
RFMD + TriQuint = Qorvo
Application Schematic 2.45GHZ
VCC
22 nF
4 pF
10
1
16
15
14
13
12
22 nF
VCC
2
3
4
1.5 nH
22 nF
RF IN
22 nF
11
10
RF OUT
0.5 pF
1.5 pF
Bias
7
5
6
8
9
5 pF
5 pF
10
200
VCC
VAPC
22 nF
22 nF
Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
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RFPA2172
RFMD + TriQuint = Qorvo
Evaluation Board Schematic 915 MHz
P1
P2
1
VCC2
1
2
P1-1
P1-3
VCC2
GND
VCC3
P2-1
P2-3
VAPC
GND
VCC1
2
22 nF
L1
8.2 nH
R1*
OPEN
3
3
CON3
CON3
1
16
15
14
13
C7
C8
2.4 pF
22 nF
2
3
4
12
VCC3
C2
22 nF
L3
3.9 nH
50 strip
C6
22 nF
J1
RF IN
11
10
50 strip
J2
RF OUT
L2
2.7 nH
Bias
7
C5
4 pF
5
6
8
9
R2
3 k
VCC1
VAPC
C3
22 nF
C4
22 nF
Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
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RFPA2172
RFMD + TriQuint = Qorvo
Evaluation Board Schematic 2.45GHz
VCC2
P1
1
P2
1
2
P1-1
P1-3
VCC2
GND
VCC3
P2-1
P2-3
VAPC
GND
VCC1
C11
22 nF
2
R3
10
3
3
CON3
CON3
C10
4 pF
L1
1.5 nH
1
16
15
14
13
12
VCC3
C9
22 nF
2
3
4
C2
22 nF
50 strip
J1
RF IN
C8
22 nF
11
10
50 strip
C1
0.5 pF
J2
RF OUT
Bias
7
C7
1.5 pF
5
6
8
9
2172401-
C3
C6
5 pF
5 pF
R1
10
R2
200
VCC1
VAPC
C4
22 nF
C5
22 nF
Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
7 of 12
RFPA2172
RFMD + TriQuint = Qorvo
Pin Out
1
16
15
14
13
2
3
4
12
11
10
GND
RF OUT
RF OUT
GND
RF IN
GND
5
6
7
8
9
Package Outline Drawing (Dimensions in millimeters)
Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
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RFPA2172
RFMD + TriQuint = Qorvo
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical
thickness is 3 µinch to 8 µinch gold over 180µinch nickel.
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been
developed and tested for optimized assembly at RFMD; it may require some modifications to address company
specific assembly processes. The PCB land pattern has been developed to accommodate lead and package
tolerances.
PCB Metal Land Pattern
Figure 1. PCB Metal Land Pattern (Top View)
Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
9 of 12
RFPA2172
RFMD + TriQuint = Qorvo
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown
for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance
around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to
create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier.
Figure 2. PCB Solder Mask (Top View)
Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
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RFPA2172
RFMD + TriQuint = Qorvo
Figure 3. PCB Stencil Pattern (Top View)
Thermal Pad and Via Design
The PCB metal land pattern has been designed with a thermal pad that matches the die paddle size on the
bottom of the device.
Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern
has been designed to address thermal, power dissipation and electrical requirements of the device as well as
accommodating routing strategies.
The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished
hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a
design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results.
Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
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RFPA2172
RFMD + TriQuint = Qorvo
Pin Names and Descriptions
Pin
Name
Description
Interface Schematic
Ground connection. For best performance, keep traces
1
GND
GND
physically short and connect immediately to the ground plane.
Ground connection for the driver stage. For best
performance, keep traces physically short and connect
immediately to the ground plane.
2
3
RF input. This is a 50Ω input. No external matching is
needed. An external DC blocking capacitor is required if this
port is connected to a DC path to ground or a DC voltage.
See pin 15
RF IN
See pin 1.
GND
GND
VPD
4
5
See pin 1.
Power down pin. When this pin is OV, the device will be in
power down mode, dissipating minimum DC power. This pin
also serves as the VCC supply pin for the bias circuitry. VPD
should be at the supply voltage when the part is not in power
down mode.
6
7
APC
Analog power control. Output power varies as a function of
the voltage on this pin. See graph. This pin must be driven
through a series resistor with a voltage between OV and VCC.
Series resistor determines dynamic range of power control.
See plot “POUT versus Gain Control versus Gain Control
Resistor”.
APC
Bias
Network
RF IN
1st
Stage
See pin 1.
See pin 1.
See pin 1.
8
9
GND
GND
10
GND
RF output. An external matching network is required to
provide the optimum load impedance at this pin.
See pin 15
See pin 15
RF OUT
11
RF output and power supply for the output stage. Bias voltage
for the output stage is provided through this pin. A shunt cap
resonating with the bond wire inductance at 2xf0 can also be
used at this pin to provide a second harmonic trap.
RF OUT
12
See pin 1.
13
14
GND
GND
VCC
See pin 1.
VCC
Power supply for driver stage and interstage matching. This
pin forms the shunt inductance needed for proper tuning of
the interstage. Refer to the application schematic for the
proper configuration. Note: Position and value of the
components are important.
Inductor
External Cap
Pin 15
GND
Bond
Wire
15
RF OUT
RF OUT
RF IN
2nd Stage
1st Stage
See pin 1.
GND
GND
16
Ground connection for the output stage. This pad should be
connected to the groundplane by vias directly under the
device. A short path is required to obtain optimum
performance, as well as provide a good thermal path to the
PCB for maximum heat dissipation.
Pkg Base
Revision DS20170508
Disclaimer: Subject to change without notice
© 2015 RF Micro Devices, Inc.
www.rfmd.com / www.qorvo.com
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