T2G6003028-FSEVB2 [QORVO]
30W, 28V DC â 6 GHz, GaN RF Power Transistor;
| 型号： | T2G6003028-FSEVB2 |
| 厂家： | 
Qorvo |
| 描述： | 30W, 28V DC â 6 GHz, GaN RF Power Transistor |
| 文件： | 总21页 (文件大小：2497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
Functional Block Diagram
• Frequency: DC to 6 GHz
• Output Power (P3dB): 42.7 W at 3 GHz
• Linear Gain: >14 dB at 3 GHz
• Operating Voltage: 28 V
1
• Low thermal resistance package
2
General Description
Pin Configuration
The Qorvo T2G6003028-FS is a 30W (P3dB) discrete GaN
on SiC HEMT which operates from DC to 6 GHz. The
device is constructed with Qorvo’s proven QGaN25
process, which features advanced field plate techniques
to optimize power and efficiency at high drain bias
operating conditions. This optimization can potentially
lower system costs in terms of fewer amplifier line-ups
and lower thermal management costs.
Pin No.
1
Label
VD / RF OUT
VG / RF IN
Source
2
Flange
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Ordering Information
Part ECCN
Description
Packaged part
Flangeless
T2G6003028-FS EAR99
T2G6003028-FS-
EAR99
5.4 – 5.9 GHz
Evaluation Board
EVB1
T2G6003028-FS-
EAR99
1.3 – 1.9 GHz
Evaluation Board
EVB2
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 1 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Recommended Operating Conditions(1)
Parameter
Value
Parameter
Value
12 - 40 V
Breakdown Voltage (BVDG
Gate Voltage Range (VG)
Drain Current (ID)
)
100 V
-7 to 0 V
5.5 A
Drain Voltage Range (VD)
Drain Quiescent Current (IDQ
Peak Drain Current ( ID)
Gate Voltage (VG)
)
200 mA (Typ.)
1.7 A (Typ.)
-3.3 V (Typ.)
225 °C (Max)
35 W (Max)
40 W (Max)
Gate Current (IG)
-10 to 28 mA
47.5 W
Power Dissipation (PD)
Channel Temperature (TCH)
Power Dissipation, CW (PD)
Power Dissipation, Pulse (PD) (2)
RF Input Power, CW,
T = 25°C (PIN)
40 dBm
275 °C
Channel Temperature (TCH)
1. Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Mounting Temperature
(30 Seconds)
320 °C
2. Pulse Width = 380 uS, Duty Cycle = 50%
Storage Temperature
-40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Optimum Power Tuned Load Pull Performance
Test conditions unless otherwise noted: T = 25°C.
Parameter
Frequency (F)
Typical Value
4
Units
GHz
V
1
2
28
3
5
28
6
Drain Voltage (VD)
28
28
28
28
Bias Current (IDQ
Output P3dB (P3dB
PAE @ P3dB (PAE3dB
)
200
45.7
64.9
19.9
200
46
200
46.3
68.1
11.3
200
46.5
54.6
10.1
200
46.8
55.9
200
46.2
54.7
12.1
mA
)
dBm
%
)
64.2
15.7
Gain @ P3dB (G3dB
)
10.7
dB
Notes:
1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20%
2. Characteristic Impedance (Zo) = 10 Ω. See pg. 18 for Load Pull Reference Planes.
RF Characterization – Optimum Efficiency Tune Load Pull Performance
Test conditions unless otherwise noted: T = 25°C.
Parameter
Frequency (F)
Typical Value
4
Units
GHz
V
1
28
2
28
3
5
6
28
Drain Voltage (VD)
28
28
28
Bias Current (IDQ
Output P3dB (P3dB
PAE @ P3dB (PAE3dB
)
200
43.1
73
200
43.1
76
200
44.6
46.1
11.7
200
44.1
65.1
10.8
200
44.9
69.5
12.4
200
45.7
60
mA
)
dBm
%
)
Gain @ P3dB (G3dB
)
19.7
16.2
12.9
dB
Notes:
1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20%.
2. Characteristic Impedance (Zo) = 10 Ω. See pg. 18 for Load Pull Reference Planes.
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 2 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
RF Characterization – Performance at 5.6 GHz (1, 2)
Symbol Parameter
Linear Gain
Min
12.0
43.0
45.0
9.0
Typical
14.0
Max
17.0
46.0
70.0
14.0
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
44.6
dBm
%
DE3dB
G3dB
54.0
11.0
dB
Notes:
1. Performance at 5.6 GHz in the 5.4 to 5.9 GHz Evaluation Board
2. VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%
RF Characterization – Mismatch Ruggedness at 5.6 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 200 mA
Symbol Parameter
VSWR Impedance Mismatch Ruggedness
Typical
10:1
Notes:
1. P1dB CW Input Power under matched condition.
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 3 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Thermal and Reliability - CW (1)
Parameter
Test Conditions
Value
3.82
Units
°C/W
°C
Thermal Resistance, θJC
Maximum Channel Temperature, TCH
Median Lifetime, TM
PD = 30 W, Tbase = 85°C
200
1.54E7
4.01
Hrs
Thermal Resistance, θJC
°C/W
°C
Maximum Channel Temperature, TCH
Median Lifetime, TM
PD = 35 W, Tbase = 85°C
PD = 40 W, Tbase = 85°C
PD = 45 W, Tbase = 85°C
225
1.80E6
4.22
Hrs
Thermal Resistance, θJC
Maximum Channel Temperature, TCH
Median Lifetime, TM
°C/W
°C
254
1.93E5
4.43
Hrs
Thermal Resistance, θJC
Maximum Channel Temperature, TCH
Median Lifetime, TM
°C/W
°C
284
2.41E4
Hrs
Notes:
1. Thermal resistance calculated to bottom of package.
Thermal and Reliability - Pulsed (1)
Parameter
Test Conditions
Value
2.33
Units
°C/W
°C
Thermal Resistance, θJC
Peak Channel Temperature, TCH
Median Lifetime, TM
PD = 40 W, Tbase = 85°C
Pulse Width = 100 uS
Duty Cycle = 5%
178
2.52E9
2.43
Hrs
Thermal Resistance, θJC
°C/W
°C
PD = 40 W, Tbase = 85°C
Pulse Width = 100 uS
Duty Cycle = 10%
Peak Channel Temperature, TCH
Median Lifetime, TM
182
8.60E8
2.68
Hrs
Thermal Resistance, θJC
Peak Channel Temperature, TCH
Median Lifetime, TM
°C/W
°C
PD = 40 W, Tbase = 85°C
Pulse Width = 100 uS
Duty Cycle = 20%
192
1.65E8
3.18
Hrs
Thermal Resistance, θJC
Peak Channel Temperature, TCH
Median Lifetime, TM
°C/W
°C
PD = 40 W, Tbase = 85°C
Pulse Width = 100 uS
Duty Cycle = 50%
212
1.10E7
Hrs
Notes:
2. Thermal resistance calculated to bottom of package.
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 4 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Median Lifetime
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 5 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Maximum Channel Temperature
Peak Channel Temperature
Tbase = 85oC, Pdiss = 40 W (4.0 W/mm)
260
250
240
230
220
210
200
190
180
170
160
150
140
130
120
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
Pulse Width (sec)
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 6 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2, 3)
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. See pg. 18 for load pull reference planes.
1GHz, Load-pull
Max Power is 45.7dBm
at Z = 8.696-2.126i
•
Ω
= -0.0561-0.1201i
Max Gain is 22.8dB
Γ
•
Zs(fo) = 1.89+3.07i
Ω
at Z = 4.451+3.146i
Ω
= -0.3213+0.2877i
Max PAE is 73%
Γ
•
at Z = 12.703+1.76i
= 0.1243+0.0679i
Ω
Γ
22.4
22.1
21.8
70.6
68.6
66.6
45.6
45.4
45.2
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Ω
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 7 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2, 3)
Notes:
1.Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. See pg. 18 for load pull reference planes.
2GHz, Load-pull
Max Power is 46dBm
at Z = 3.96+1.293i
•
Ω
= -0.4205+0.1315i
Max Gain is 16.3dB
Γ
•
Zs(fo) = 2.2-0.59i
Ω
at Z = 4.839+4.569i
= -0.2311+0.379i
Ω
Γ
Max PAE is 76%
at Z = 5.745+6.305i
•
Ω
= -0.0947+0.4384i
Γ
75.6
16.2
15.9
15.6
73.6
71.6
46
45.8
45.6
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Ω
Datasheet: Rev B 02-01-16
© 2016 Qorvo
Disclaimer: Subject to change without notice
- 8 of 21 -
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2, 3)
Notes:
1.Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. See pg. 18 for load pull reference planes.
3GHz, Load-pull
Max Power is 46.3dBm
at Z = 4.75-2.265i
•
Ω
= -0.3247-0.2034i
Max Gain is 11.9dB
Γ
•
Zs(fo) = 5.66-4.31i
Ω
at Z = 6.766+2.282i
Ω
= -0.1712+0.1594i
Max PAE is 76%
Γ
•
at Z = 4.561+0.757i
= -0.3698+0.0712i
Ω
11.4
11.7
11.1
Γ
74.2
72.2
70.2
46.3
46.1
45.9
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Ω
Datasheet: Rev B 02-01-16
© 2016 Qorvo
Disclaimer: Subject to change without notice
- 9 of 21 -
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2, 3)
Notes:
1.Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3.See pg. 18 for load pull reference planes.
4GHz, Load-pull
Max Power is 46.5dBm
at Z = 5.19-7.461i
•
Ω
= -0.0607-0.521i
Max Gain is 12dB
Γ
•
Zs(fo) = 9.81-12.52i
Ω
at Z = 4.766-1.577i
= -0.3392-0.143i
Ω
Γ
Max PAE is 65.1%
at Z = 3.107-3.202i
•
Ω
= -0.4399-0.3518i
Γ
12
11.7
11.4
61
63
65
46
46.2
46.4
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Ω
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 10 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2, 3)
Notes:
1.Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. See pg. 18 for load pull reference planes.
5GHz, Load-pull
Max Power is 46.8dBm
at Z = 6.608-11.147i
•
Ω
= 0.1697-0.5572i
Max Gain is 12.6dB
at Z = 3.707-4.914i
Γ
Zs(fo) = 15.43-11.56i
Ω
•
Ω
= -0.2929-0.4635i
Max PAE is 69.6%
Γ
•
at Z = 4.332-6.284i
= -0.1705-0.5132i
Ω
Γ
11.8
12.1
12.4
65.1
67.1
46.3
46.5
69.1
46.7
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Ω
Datasheet: Rev B 02-01-16
© 2016 Qorvo
Disclaimer: Subject to change without notice
- 11 of 21 -
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2, 3)
Notes:
1.Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. See pg. 18 for load pull reference planes.
6GHz, Load-pull
Max Power is 46.2dBm
at Z = 5.156-12.275i
•
Ω
= 0.2031-0.6454i
Max Gain is 13.2dB
at Z = 3.595-8.101i
Γ
Zs(fo) = 7.65-2.21i
Ω
•
Ω
= -0.0856-0.6469i
Max PAE is 60%
Γ
•
at Z = 4.764-10.203i
= 0.0832-0.6336i
Ω
Γ
45.8
46
12.5
55
Power
Gain
12.8
13.1
57
59
46.2
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Ω
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 12 of 21 -
© 2016 Qorvo
www.qorvo.com
Zs-fo = 1.89+3.07i
Ω
Zs-2fo = NaN
Zs-3fo = NaN
Ω
Ω
Zl-fo = 12.703+1.76i
Ω
Zl-2fo = NaN
Zl-3fo = NaN
Ω
Ω
Gain
PAE
Zs-2fo = NaN
Zs-3fo = NaN
Zl-fo = 3.96+1.293i
Ω
Ω
Zl-2fo = NaN
Zl-3fo = NaN
Ω
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Characterization Drive-up (1, 2)
1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20%
2. NaN means the parameter is either unavailable or undefined.
T2G6003028 - Gain and PAE vs. Output Power
1 GHz - Power Tuned
T2G6003028 - Gain and PAE vs. Output Power
1 GHz - Efficiency Tuned
27
26
25
24
23
22
21
20
19
18
17
100
90
80
70
60
50
40
30
20
10
0
27
26
25
24
23
22
21
20
19
18
17
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs-fo = 1.89+3.07i
Ω
Zs-2fo = NaN
Zs-3fo = NaN
Zl-fo = 8.696-2.126i
Ω
Ω
Ω
Zl-2fo = NaN
Zl-3fo = NaN
Ω
Ω
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
31 32 33 34 35 36 37 38 39 40 41 42 43 44
Output Power [dBm]
T2G6003028 - Gain and PAE vs. Output Power
2 GHz - Power Tuned
T2G6003028 - Gain and PAE vs. Output Power
2 GHz - Efficiency Tuned
23
100
23
22
21
20
19
18
17
16
15
14
13
100
90
80
70
60
50
40
30
20
10
0
Zs-fo = 2.2-0.59i
Ω
Zs-fo = 2.2-0.59i
Ω
Gain
PAE
22
21
20
19
18
17
16
15
14
13
90
80
70
60
50
40
30
20
10
0
Zs-2fo = NaN
Zs-3fo = NaN
Zl-fo = 5.745+6.305i
Ω
Ω
Ω
Ω
Zl-2fo = NaN
Zl-3fo = NaN
Ω
Ω
Ω
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
31 32 33 34 35 36 37 38 39 40 41 42 43 44
Output Power [dBm]
T2G6003028 - Gain and PAE vs. Output Power
3 GHz - Power Tuned
T2G6003028 - Gain and PAE vs. Output Power
3 GHz - Efficiency Tuned
18
17
16
15
14
13
12
11
10
9
100
90
80
70
60
50
40
30
20
10
0
18
100
Zs-fo = 5.66-4.31i
Ω
Gain
PAE
Gain
PAE
17
90
80
70
60
50
40
30
20
10
0
Zs-2fo = NaN
Zs-3fo = NaN
Zl-fo = 4.75-2.265i
Ω
Ω
16
Ω
Zl-2fo = NaN
Zl-3fo = NaN
Ω
15
Ω
14 Zs-fo = 5.66-4.31i
Ω
Zs-2fo = NaN
Zs-3fo = NaN
Ω
13
12
11
10
9
Ω
Zl-fo = 4.561+0.757i
Zl-2fo = NaN
Zl-3fo = NaN
Ω
Ω
Ω
8
8
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
32 33 34 35 36 37 38 39 40 41 42 43 44 45
Output Power [dBm]
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 13 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Characterization Drive-up (1, 2)
1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20%
2. NaN means the parameter is either unavailable or undefined.
T2G6003028 - Gain and PAE vs. Output Power
4 GHz - Power Tuned
T2G6003028 - Gain and PAE vs. Output Power
4 GHz - Efficiency Tuned
16
15
14
13
12
11
10
9
100
90
80
70
60
50
40
30
20
10
0
16
15
14
13
12
11
10
9
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs-fo = 9.81-12.52i
Ω
Zs-2fo = NaN
Zs-3fo = NaN
Zl-fo = 3.107-3.202i
Ω
Zs-fo = 9.81-12.52i
Ω
Ω
Zs-2fo = NaN
Zs-3fo = NaN
Zl-fo = 5.19-7.461i
Ω
Ω
Ω
Zl-2fo = NaN
Zl-3fo = NaN
Ω
Ω
Ω
Zl-2fo = NaN
Zl-3fo = NaN
Ω
Ω
8
8
7
7
6
6
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
32 33 34 35 36 37 38 39 40 41 42 43 44 45
Output Power [dBm]
T2G6003028 - Gain and PAE vs. Output Power
5 GHz - Power Tuned
T2G6003028 - Gain and PAE vs. Output Power
5 GHz - Efficiency Tuned
17
100
17
100
Gain
PAE
Gain
PAE
16
15
14
13
12
11
10
9
90
80
70
60
50
40
30
20
10
0
16
15
90
80
70
60
50
40
30
20
10
0
Zs-fo = 15.43-11.56i
Ω
Ω
14 Zs-2fo = NaN
Zs-3fo = NaN
Ω
Zs-fo = 15.43-11.56i
Ω
13
12
11
10
9
Zl-fo = 4.332-6.284i
Zl-2fo = NaN
Zl-3fo = NaN
Ω
Zs-2fo = NaN
Zs-3fo = NaN
Zl-fo = 6.608-11.147i
Ω
Ω
Ω
Ω
Ω
Zl-2fo = NaN
Zl-3fo = NaN
Ω
Ω
8
8
7
7
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
T2G6003028 - Gain and PAE vs. Output Power
6 GHz - Efficiency Tuned
T2G6003028 - Gain and PAE vs. Output Power
6 GHz - Power Tuned
19
100
19
18
17
16
15
14
13
12
11
10
9
100
90
80
70
60
50
40
30
20
10
0
Zs-fo = 7.65-2.21i
Ω
Gain
PAE
Gain
PAE
18
17
16
15
14
13
12
11
10
9
90
80
70
60
50
40
30
20
10
0
Zs-2fo = NaN
Zs-3fo = NaN
Zl-fo = 5.156-12.275i
Ω
Ω
Ω
Zl-2fo = NaN
Zl-3fo = NaN
Ω
Ω
Zs-fo = 7.65-2.21i
Ω
Zs-2fo = NaN
Zs-3fo = NaN
Zl-fo = 4.764-10.203i
Ω
Ω
Ω
Zl-2fo = NaN
Zl-3fo = NaN
Ω
Ω
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 14 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Performance Over Temperature (1, 2)
Performance measured in Qorvo’s 5.4 GHz to 5.9 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 15 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Performance (1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Application Circuit
Bias-down Procedure
Bias-up Procedure
Set gate voltage (VG) to -5.0V.
Set drain current (ID) limit to 220 mA.
Set drain voltage (VD) to 28 V
Slowly increase VG until quiescent ID is 200 mA.
Set drain current (ID) to 2.8 A.
Apply RF signal.
Turn off RF signal.
Turn off VD and wait 1 second to allow drain capacitor
discharge.
Turn off VG.
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 16 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized
assembly at Qorvo Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
C1
Value
0.3 pF
Qty Manufacturer
Part Number
ATC600S0R3
1
1
2
5
1
1
1
1
1
2
2
2
1
1
1
ATC
C2
0.2 pF
ATC
ATC600S0R2
L1, L2
8.8 NH
COILCRAFT
ATC
1606-8
C3, C4, C6, C7, C8
3 pF
ATC600S3R0
C5
R1
0.4 pF
ATC
ATC600S0R5
97.6 Ohms
4.7 Ohms
330 Ohms
50 Ohms
220 pF
Venkel
CR0604-16w-97R6FT
37C0064
R2
Newark
R3
Newark
TNPW1206330RBT9ET1-E3
CRCW120651R0FKEA
AVX06035C22KAT2A
VJ1206Y222KXA
VJ1206Y223KXA
EMVY500ADA221MJA0G
541-1231
R4
ATC
C9, C10
C11, C12
C13, C14
C15
AVX
2200 pF
22000 pF
220 uF
Vitramon
Vitramon
United Chemi-Con
Allied
C16
1.0 uF
L3
48 Ohm
Ferrite, Laird Tech.
28F0121-0SR-10
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 17 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Pin Layout
Note:
The T2G6003028-FS will be marked with the “30282” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, and the “ZZZ” is an auto-generated number.
Pin Description
Pin
Symbol
Description
Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 17 as an
example.
1
VD / RF OUT
Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 17 as an
example.
2
VG / RF IN
Flange
3
Source connected to ground; see EVB Layout on page 17 as an example.
Notes:
Thermal resistance measured to bottom of package
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 18 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Mechanical Information
All dimensions are in millimeters.
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 19 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°C
Caution! ESD-Sensitive Device
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: Class 1A
Value:
Test:
Standard:
Passes ≥ 250 V to < 500 V max.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
MSL Rating
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 20 of 21 -
© 2016 Qorvo
www.qorvo.com
T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about Qorvo:
Web: www.qorvo.com
Email: info-sales@qorvo.comFax:
Tel: +1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@qorvo.com
Important Notice
The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information
contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein.
Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information
is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain
and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or
any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Datasheet: Rev B 02-01-16
Disclaimer: Subject to change without notice
- 21 of 21 -
© 2016 Qorvo
www.qorvo.com
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