TGA2307 [QORVO]
5.0 â 6.0 GHz 50 W GaN Power Amplifier;
| 型号： | TGA2307 |
| 厂家： | 
Qorvo |
| 描述： | 5.0 â 6.0 GHz 50 W GaN Power Amplifier |
| 文件： | 总16页 (文件大小：567K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGA2307
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
®
Product Overview
Qorvo’s TGA2307 is a MMIC power amplifier fabricated on
Qorvo’s production 0.25um GaN on SiC process.
Operating from 5ꢀ–ꢀ6 GHz, the TGA2307 produces greater
than 47 dBm of saturated output power with power-added
efficiency greater than 40 % and large signal gain greater
than 20 dB.
Both ports are fully matched to 50 ohms with integrated
DC blocking capacitors thereby simplifying system
integration. The TGA2307's performance makes it well
suited for both commercial and military applications.
Key Features
• Frequency Range: 5.0ꢀ–ꢀ6.0 GHz
Lead-free and RoHS compliant.
• Output Power (PIN = 27 dBm): > 47 dBm
• Power Added Efficiency (PIN = 27 dBm): > 40 %
• Small Signal Gain: > 26 dB
• Input Return Loss: > 18 dB
• Large Signal Gain (PIN = 27 dBm): > 20 dB
• Bias Condition: VD = 28 V, IDQ = 1000 mA
• Chip Dimensions: 4.280 x 4.260 x 0.100 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
2
• C-Band Radar
• Satellite Communication
8
7
6
Ordering Information
Part No.
Description
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power
Amplifier
TGA2307
TGA2307S2
Samples (2 pcs.)
TGA2307EVB
Evaluation Board for TGA2307
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Drain Voltage (VD)
Valueꢀ/ꢀRange
40 V
Parameter
Drain Voltage (VD)
Valueꢀ/ꢀRange
28 V
Drain Current (IDQ
)
1000 mA
Gate Voltage Range (VG)
Peak Drain Current (ID)
Gate Current (IG)
−8 to +1 V
7.2 A
Gate Voltage (VG), Typical
Operating Temperature
−2.5 V
−40 to +85 °C
See plot, pg. 11
96 W
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Power Dissipation (PDISS), 85°C
Input Power (PIN), Pulsed, 50Ω,
VD=28V, IDQ=1000mA, 85 °C
Input Power (PIN), Pulsed, 3:1 VSWR,
VD=28V, IDQ=1000mA, 85 °C
33 dBm
33 dBm
Mounting Temperature (30 seconds)
Storage Temperature
320 °C
−65 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Parameter
Min
Typ
Max
Units
Operational Frequency Range
5.0
6.0
GHz
Output Power (PIN = 27 dBm)
5.0 GHz
5.5 GHz
6.0 GHz
47.6
47.4
47.1
dBm
dBm
dBm
Power Added Efficiency (PIN = 27 dBm)
Small Signal Gain (CW) (IDQ = 500 mA)
Input Return Loss (CW) (IDQ = 500 mA)
Output Return Loss (CW) (IDQ = 500 mA)
5.0 GHz
5.5 GHz
6.0 GHz
45.7
43.1
42.1
%
%
%
5.0 GHz
5.5 GHz
6.0 GHz
24.7
24.3
24.8
dB
dB
dB
5.0 GHz
5.5 GHz
6.0 GHz
26
22
25
dB
dB
dB
5.0 GHz
5.5 GHz
6.0 GHz
10
8
8
dB
dB
dB
2nd Harmonic Performance
3rd Harmonic Performance
See plots pg. 7,8
See plots pg. 7,8
-0.012
Output Power Temp. Coeff. (85ꢀ–ꢀ25 °C, PIN = 27 dBm))
Sm. Signal Gain Temperature Coefficient (85 to ꢀ−40 °C)
dB/°C
dB/°C
-0.044
Test conditions, unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 1000 mA, Typical, PW = 100 us, Duty Cycle = 10%
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, PIN = 27 dBm, T = 25 °C, PW = 100 us, Duty Cycle = 10%
Output Power vs. Frequency vs. Temp.
Output Power vs. Frequency vs. VD
49.0
48.5
48.0
47.5
47.0
46.5
46.0
45.5
45.0
49.0
48.5
48.0
47.5
47.0
46.5
46.0
45.5
45.0
25 V
28 V
32 V
6.0
- 40 C
+ 25 C
5.5
+ 85 C
6.0
4.5
5.0
6.5
4.5
5.0
5.5
Frequency (GHz)
6.5
6.5
6.5
Frequency (GHz)
Power Added Eff. vs. Frequency vs. Temp.
Power Added Eff. vs. Frequency vs. VD
55
50
45
40
35
30
55
50
45
40
35
30
- 40 C
+ 25 C
5.5
+ 85 C
6.0
25 V
28 V
32 V
4.5
5.0
6.5
4.5
5.0
5.5
Frequency (GHz)
6.0
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
Drain Current vs. Frequency vs.VD
5.5
5.0
4.5
4.0
3.5
3.0
2.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
- 40 C
+ 25 C
5.5
+ 85 C
6.0
25 V
28 V
32 V
4.5
5.0
6.5
4.5
5.0
5.5
Frequency (GHz)
6.0
Frequency (GHz)
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, PIN = 27 dBm, T = 25 °C, PW = 100 us, Duty Cycle = 10%
Gate Current vs. Frequency vs. VD
Gate Current vs. Frequency vs. Temp.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-0.10
- 40 C
+ 25 C
+ 85 C
25 V
28 V
32 V
4.5
5.0
5.5
Frequency (GHz)
6.0
6.5
4.5
5.0
5.5
Frequency (GHz)
6.0
6.5
Output Power vs. Frequency vs. IDQ
Power Added Eff. vs. Frequency vs. IDQ
49.0
48.5
48.0
47.5
47.0
46.5
46.0
45.5
45.0
55
50
45
40
35
500 mA
1000 mA
500 mA
1000 mA
30
4.5
5.0
5.5
6.0
6.5
4.5
5.0
5.5
Frequency (GHz)
6.0
6.5
Frequency (GHz)
Drain Current vs. Frequency vs. IDQ
5.5
5.0
4.5
4.0
3.5
3.0
500 mA
1000 mA
2.5
4.5
5.0
5.5
Frequency (GHz)
6.0
6.5
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: VD = 28 V, IDQ = 500 mA, Freq. = 5.5 GHz, T = 25 °C, PW = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. Temp.
Output Power vs. Input Power vs. VD
55
50
45
40
35
30
25
20
15
10
55
50
45
40
35
30
25
20
15
10
- 40 C
+25 C
+85 C
25 V
28 V
32 V
5
10
15
20
25
30
30
30
5
10
15
20
25
30
30
30
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. Temp.
PAE vs. Input Power vs. VD
55
50
45
40
35
30
25
20
15
10
5
55
50
45
40
35
30
25
20
15
10
5
- 40 C
+25 C
+85 C
25 V
20
28 V
25
32 V
0
0
5
10
15
20
25
5
10
15
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. VD
Drain Current vs. Input Power vs. Temp.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 40 C
+25 C
+85 C
25 V
28 V
32 V
5
10
15
20
25
5
10
15
20
25
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: VD = 28 V, IDQ = 500 mA, T = 25 °C, PW = 100 us, Duty Cycle = 10%
PAE vs. Input Power vs. Freq.
Output Power vs. Input Power vs. Freq.
55
50
45
40
35
30
25
55
50
45
40
35
30
25
20
15
10
5
5.0 GHz
5.5 GHz
6.0 GHz
5.0 GHz
5.5 GHz
6.0 GHz
0
5
10
15
20
25
30
5
10
15
20
25
30
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Freq.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5.0 GHz
5.5 GHz
6.0 GHz
0.0
5
10
15
20
25
30
Input Power (dBm)
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Performance Plots – Harmonics
Test conditions unless otherwise noted: VD = 28 V, IDQ = 500 mA, PIN = 27 dBm, PW = 100 us, Duty Cycle = 10%
2nd Harmonic vs. POUT vs. Freq.
3rd Harmonic vs. POUT vs. Freq.
-30
-35
-40
-45
-50
-55
-60
-30
-40
-50
-60
-70
-80
-90
5.0 GHz
40
5.5 GHz
42
6.0 GHz
44
5.0 GHz
40
5.5 GHz
42
6.0 GHz
44
36
36
36
38
46
48
48
48
36
36
36
38
46
48
48
48
Output Power (dBm)
Output Power (dBm)
2nd Harmonic vs. POUT vs. Temp.
3rd Harmonic vs. POUT vs. Temp.
-30
-35
-40
-45
-50
-55
-60
-30
-40
-50
-60
-70
-80
-90
- 40 C
+25 C
+85 C
- 40 C
40
+25 C
42
+85 C
44
38
40
42
44
46
38
46
Output Power (dBm)
Output Power (dBm)
2nd Harmonic vs. POUT vs. VD
3rd Harmonic vs. POUT vs. VD
-30
-35
-40
-45
-50
-55
-60
-30
-40
-50
-60
-70
-80
-90
25 V
28 V
32 V
44
25 V
28 V
32 V
44
38
40
42
46
38
40
42
46
Output Power (dBm)
Output Power (dBm)
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Performance Plots – Harmonics
Test conditions unless otherwise noted: VD = 28 V, IDQ = 500 mA, PIN = 27 dBm, PW = 100 us, Duty Cycle = 10%
2nd Harmonic vs. POUT vs. IDQ
3rd Harmonic vs. POUT vs. IDQ
-30
-35
-40
-45
-50
-55
-60
-30
-40
-50
-60
-70
-80
-90
500 mA
40
1000 mA
44
500 mA
40
1000 mA
44
36
38
42
46
48
36
38
42
46
48
Output Power (dBm)
Output Power (dBm)
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Performance Plots – Small Signal (CW)
Test conditions unless otherwise noted: Vd = 28 V, Idq = 500 mA, T = 25 °C
Gain vs. Freq. vs. Temp.
Gain vs. Frequency vs. VD
32
30
28
26
24
22
20
18
16
32
30
28
26
24
22
20
18
16
-40 C
5.0
+25 C
5.5
+85 C
6.0
25 V
5.0
28 V
5.5
32 V
6.0
4.0
4.5
6.5
7.0
7.0
7.0
4.0
4.5
6.5
7.0
7.0
7.0
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Freq. vs. VD
Input Return Loss vs. Freq. vs. Temp.
0
0
-40 C
+25 C
+85 C
25 V
28 V
32 V
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
4.0
4.5
5.0
5.5
6.0
6.5
4.0
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
Output Return Loss vs. Freq. vs. VD
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
25 V
28 V
32 V
6.0
-40 C
5.0
+25 C
5.5
+85 C
6.0
4.0
4.5
6.5
4.0
4.5
5.0
5.5
6.5
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Performance Plots – Small Signal (CW)
Test conditions unless otherwise noted: Vd = 28 V, Idq = 500 mA, T = 25 °C
Input Return Loss vs. Freq. vs. IDQ
Gain vs. Frequency vs. IDQ
32
30
28
26
24
22
20
18
16
0
-5
500 mA
1000 mA
-10
-15
-20
-25
-30
500 mA
5.0
1000 mA
6.0
4.0
4.5
5.5
6.5
7.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Freq. vs. IDQ
0
-5
-10
-15
-20
-25
500 mA
5.0
1000 mA
6.0
-30
4.0
4.5
5.5
6.5
7.0
Frequency (GHz)
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
0.79
Units
ºC/W
°C
Tbase = 85 °C, VD = 28 V, IDQ = 1.0 A, Freq = 5.75 GHz,
ID_Drive = 4.08 A, PIN = 27 dBm, POUT = 46.6 dBm,
PDISS = 65.7 W, PW = 100 us, DC = 10%
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (Under RF)
Notes:
137
1. Die mounted to 20 mil CuMo carrier plate with AuSn solder. Thermal resistance determined to the back of carrier (85 °C).
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Power Dissipation and Maximum Gate Current
TGA2307 PDISS vs. Frequency
IDQ = 500 mA, PIN = 27 dBm
90
100
80
70
60
50
40
30
20
10
0
25V, 85C
28V, 85C
32V, 85C
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Applications Information and Bias Procedure
C12
C8
C9
C13
C15
10 uF
0.01 uF
0.01 uF
10 uF
10 uF
R6
0 Ω
R2
5.1 Ω
R3
5.1 Ω
R7
0 Ω
R9
0 Ω
C3
C1
C2
VG
VD
RF In
RF Out
R5
0 Ω
C5
R1
5.1 Ω
R8
0 Ω
R13
0 Ω
R4
5.1 Ω
C6
C4
C11
C7
C14
C19
C10
10 uF
0.01 uF
10 uF
10 uF
0.01 uF
Notes:
1. VG & VD need to be biased from both sides.
2. R7, R8, C13, C14 should be added if the TGA2307 is to be used with a fixed voltage (non-pulsed) drain bias.
Bias-Down Procedure
Bias-Up Procedure
1. Set ID limit (CW) to 5500 mA, IG limit to 140 mA
2. Set VG to −5.0 V
1. Turn off RF signal
2. Reduce VG to −5.0 V. Ensure IDQ ~ 0mA
4. Set VD to 0 V
4. Set VD +28 V
5. Adjust VG more positive until IDQ 1000 mA (VG ~ −2.8 V
5. Turn off VD supply
6. Turn off VG supply
Typical)
6. Apply RF signal
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
R9
C15
R6
C12
C1 C2 C3
R2
C8
R3
R4
C9
C10
C7
R1
C11
R5
C4 C5 C6
C19
R13
Notes:
1. VG and VD must be biased from both sides (top and bottom).
Bill of Materials
Reference Des.
Value
Description
Manuf.
Part Number
100 pF //
10000 pF
C1ꢀ–ꢀC6
CAP, 10000pF, ±20%, 50V, X7R, 30X30, SL
Presidio
MVB3030X103M2H5C1F
C7ꢀ–ꢀC10
0.1 uF
10 uF
CAP, 0.01uF, ±10%, 50V, X7R, 0402
CAP, CER, 10UF, 25V, 20%, X5R, 1206
RES, 0 OHM, 5%, 0402
Various
Various
Various
Various
C11, C12, C15, C19
R1ꢀ–ꢀR4
0 Ohm
5.1 Ohm
R5, R6, R9, R13
RESISTOR, 5.1 OHM, 5%, 0402, SMD
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Mechanical Information and Bond Pad Description
4.260
4.150
2
3
4
2.330
2.130
1.930
1
5
8
7
6
2.130
0.000
Units: millimeters
Thickness: 0.100
Die x,y size tolerance: ± 0.050
Ground is backside of die
Bond Pad Description
Pad No.
Symbol
Pad Size (mm) Description
1
RF IN
100 x 200
RF Input; matched to 50ꢀΩ, DC blocked
Gate voltage for stage 1. Bias network is required; see Application Circuit on
page 12 as an example.
2, 8
3, 7
VG
100 x 100
Drain voltage for stage 1. Bias network is required; see Application Circuit on
page 12 as an example.
VD1
318 x 100
Drain voltage for stage 2. Bias network is required; see Application Circuit on
page 12 as an example.
4, 6
5
VD2
418 x 100
100 x 200
RF OUT
RF Output; matched to 50ꢀΩ, DC blocked
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Assembly Notes
Component placement and adhesive attachment assembly notes:
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Reflow process assembly notes:
•
•
•
•
•
Use AuSn (80/20) solder and limit exposure to temperatures above 300ꢀC to 3ꢀ–ꢀ4 minutes, maximum.
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use any kind of flux.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonic are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Data Sheet Rev. C, January 2021
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TGA2307
®
5.0ꢀ–ꢀ6.0 GHz 50 W GaN Power Amplifier
Handling Precautions
Parameter
Rating Standard
TBD ANSI/ESDA/JEDEC JS-001
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀHuman Body Model (HBM)
Solderability
Use only AuSn (80/20) solder, and limit exposure to temperatures above 300ꢀ°C to 3ꢀ–ꢀ4 minutes, maximum.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2021 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. C, January 2021
16 of 16
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