TGA2526 [QORVO]
2-20 GHz Low Noise Amplifier with AGC;
| 型号： | TGA2526 |
| 厂家： | 
Qorvo |
| 描述： | 2-20 GHz Low Noise Amplifier with AGC 射频 微波 |
| 文件： | 总14页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
General Description
The Qorvo TGA2526 is a compact LNA Gain Block MMIC
with adjustable gain control (AGC). The LNA operates from
2-20 GHz and is designed using Qorvo proven standard
0.15 um Power pHEMT production process.
The TGA2526 provides a nominal 20 dBm of output power
at 1 dB gain compression with a small signal gain of 17.5
dB. Greater than 30 dB adjustable gain can be achieved
using the Vg2 pin. Typical noise figure is 2.5 dB at 12 GHz.
Special circuitry on Vd, Vg1 and Vg2 pins provides ESD
protection.
Measured Performance
The TGA2526 is suitable for a variety of wideband systems
such as point to point radios, radar warning receivers and
electronic counter measures.
Bias conditions: Vd = 5 V, Id = 100 mA, Vg1 = -0.55 V ,
Vg2 = +1.3 V Typical
The TGA2526 is 100% DC and RF tested on-wafer to
ensure performance compliance. The TGA2526 has a
protective
surface
passivation
layer
providing
environmental robustness.
Applications
• Wideband Gain Block/LNA
• X-Ku Point to Point Radio
• Electronic Warfare Applications
10
9
8
7
6
5
4
3
2
1
0
Product Features
• Frequency Range: 2-20 GHz
• Midband NF: 2.5 dB
• Gain: 17.5 dB
• >30 dB adjustable gain with Vg2
• TOI: 29 dBm Typical
2
4
6
8
10 12 14 16 18 20
Frequency (GHz)
• 22 dBm Nominal Psat, 20 dBm Nominal P1dB
• ESD Protection circuitry on Vd, Vg1, and Vg2
• Bias: Vd = 5 V, Id = 100 mA, VG1 = -0.55 V,
VG2 = +1.3 V, Typical
Ordering Information
Part
Description
• Technology: 3 MI 0.15 um Power pHEMT
• Chip Dimensions: 2.090 x 1.350 x 0.100 mm
TGA2526
TGA2526EVB1
GaAs MMIC Die, Gel Pack, Qty 100
TGA2526 Evaluation Board, Qty 1
TGA2526-XCC-
SPACE
Space Inspected Version; Contact Sales
Data Sheet Rev C
June 2021
|
Subject to change without notice
1 of 14
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Absolute Maximum Ratings1/
Symbol
Parameter
Value
Notes
VD-VG
Drain to Gate Voltage
9 V
VD
Drain Voltage
7 V
2/
VG1
VG2
ID
Gate # 1 Voltage Range
Gate # 2 Voltage Range
Drain Current
-2 to 0 V
-2 to +3 V
144 mA
2/
2/
IG1
IG2
PIN
Gate # 1 Current Range
Gate # 2 Current Range
Input Continuous Wave Power
Channel Temperature
Storage Temperature
-20 to 14 mA
-20 to 14 mA
22 dBm
200 °C
T
T
channel
storage
−55 to 150 °C
Note:
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation
listed in Table IV.
3/
ESD protection diodes on VD, VG1 and VG2 will conduct current for voltages approaching turn-on voltages. Diode turn-on voltage
levels will decrease with decreasing temperature.
Data Sheet Rev C, June 2021
|
Subject to change without notice
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Recommended Operating Conditions
Symbol
Parameter1/
Value
VD
Drain Voltage
5 V
ID
Drain Current
100 mA
ID_Drive
VG1
Drain Current under RF Drive
Gate # 1 Voltage
144 mA
-0.55 V
1.3 V
VG2
Gate # 2 Voltage
Note:
1/
See assembly diagram for bias instructions.
RF Characterization Table
Bias: VD = 5 V, ID = 100 mA, VG1 = -0.55 V, VG2 = +1.3 V, typical. Ambient temperature: 25 °C
Data de-embedded to the end of RF feeds, data include bond wire effects
Symbol
Parameter
Test Conditions
Min
Normal
Max
Units
f = 2–18 GHz
f = 18–20 GHz
16
15
17.5
16
Gain
Small Signal Gain
dB
f = 2–4 GHz
f = 4–20 GHz
10
12
11
13
IRL
Input Return Loss
Output Return Loss
dB
dB
10
10
f = 2–6 GHz
f = 6–20 GHz
11
13
ORL
f = 2–18 GHz
f = 18–20 GHz
22
20
Psat
Saturated Output Power
dBm
dBm
f = 2–16 GHz
f = 16–20 GHz
17
15
20
17
P1dB
Output Power @ 1dB Compression
f = 2–12 GHz
f = 12–20 GHz
30
26
TOI
NF
Output TOI
dBm
dB
f = 2–4 GHz
f = 4–14 GHz
f = 14–20 GHz
3
2.5
3.5
3.5
3
4.5
Noise Figure
Data Sheet Rev C, June 2021
|
Subject to change without notice
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Measured Data
Bias conditions: VD = 5 V, ID = 100 mA, VG1 = -0.55 V, VG2 = +1.3 V Typical, 25 °C
25
20
15
10
5
0
5
10
15
20
25
30
35
Frequency (GHz)
0
-5
IRL
ORL
-10
-15
-20
-25
-30
0
5
10
15
20
25
30
35
Frequency (GHz)
Data Sheet Rev C, June 2021
|
Subject to change without notice
4 of 14
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Measured Data
Bias conditions: VD = 5 V, ID = 100 mA, VG1 = -0.55 V, VG2 = +1.3 V Typical, 25 °C
25
20
15
10
25C
70C
-40C
5
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Gain tuned by adjusting Vg2
Vd = 5 V, Vg1 = -0.55 V constant
20
15
10
5
Id = 100 mA,
Vg2 = +1.3 V
Id = 57 mA,
Vg2 = -0.44 V
Id = 43 mA,
Vg2 = -0.65 V
Id = 32 mA,
Vg2 = -0.76 V
0
Id = 23 mA,
Vd2 = -0.84 V
-5
Id = 16 mA,
Vd2 = -0.90 V
-10
-15
Id = 10.6 mA,
Vg2 = -0.95 V
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Data Sheet Rev C, June 2021
|
Subject to change without notice
5 of 14
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Measured Data
Bias conditions: VD = 5 V, ID = 100 mA, VG1 = -0.55 V, VG2 = +1.3 V Typical, 25 °C
25
250
200
150
100
50
20
15
10
5
Pout @ 12 GHz
Gain @ 12 GHz
Id @ 12 GHz
0
0
-12 -10 -8 -6 -4 -2
0
2
4
6
8
Pin (dBm)
30
25
20
15
10
5
Psat
P1dB
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Data Sheet Rev C, June 2021
|
Subject to change without notice
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Measured Data
Bias conditions: VD = 5 V, ID = 100 mA, VG1 = -0.55 V, VG2 = +1.3 V Typical, 25 °C
40
35
30
25
20
15
10
5
0
-2
0
2
4
6
8
10
12
14
Pout/Tone (dBm)
40
35
30
25
20
15
10
5
VG2 = +2.5 V
VG2 = +2.0 V
VG2 = +1.3 V
VG2 = -0.7 V
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Data Sheet Rev C, June 2021
|
Subject to change without notice
7 of 14
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Measured Data
Bias conditions: VD = 5 V, ID = 100 mA, VG1 = -0.55 V, VG2 = +1.3 V Typical, 25 °C
20
16
10
8
Gain
12
6
NF
8
4
0
4
2
0
2
4
6
8 10 12 14 16 18 20 22 24
Frequency (GHz)
Data Sheet Rev C, June 2021
|
Subject to change without notice
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Power Dissipation and Thermal Properties
Parameter
Test Conditions
Value
PD= 1.01 W
Tchannel = 113 °C
Tm = 9.1 E+7 Hrs
θjc = 42.2 °C/W
Maximum Power Dissipation
Tbaseplate = 70 °C
VD = 5 V
Thermal Resistance, θjc
ID = 100 mA
PD = 0.5 W
VD = 5 V
ID = 144 mA
POUT = 22 dBm
PD = 0.562 W
Tchannel = 91 °C
Tm = 2.0 E+9 Hrs
θjc = 42.2 °C/W
Tchannel = 94 °C
Tm = 1.3 E+9 Hrs
Thermal Resistance, θjc Under RF Drive
Median Lifetime vs Channel Temperature
1.E+13
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
FET5
1.E+04
25
50
75
100
125
150
175
200
Channel Temperature (C)
Data Sheet Rev C, June 2021
|
Subject to change without notice
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Electrical Schematic
Vd
100 pF
0.01 uF
RF IN
RF OUT
TGA2526
100 pF
0.01 uF
100 pF
0.01 uF
Vg1
Vg2
Bias Procedures
Bias-down Procedure
Set VG2 to +1.3 V
Bias-up Procedure
VG1 set to -1.5 V
VD set to +5 V
Turn off RF supply
Reduce VG1 to -1.5 V. Ensure Id ~ 0 mA
VG2 set to +1.3 V
Adjust VG1 more positive until Id is 100 mA.
This will be ~ VG1 = -0.55 V
Turn VG2 to 0 V
Turn VD to 0 V
Turn VG1 to 0 V
Apply RF signal to input
Adjust VG2 to obtain desired gain.
Data Sheet Rev C, June 2021
|
Subject to change without notice
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Mechanical Drawing and Bond Pad Description
Unit: millimeters. Die thickness: 0.10, Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad. Ground is backside of die
Pad No.
Label
RF Input
VG2
Pad Size (mm)
0.100 x 0.158
Description
1
RF Input Port, matched to 50 ohms, DC blocked
2
Gate Voltage Control
0.100 x 0.100
0.135 x 0.110
3
VD1
Drain voltage termination, no connection required
4
5
6
VD
Drain Voltage
0.110 x 0.135
0.100 x 0.158
0.100 x 0.100
RF output
VG1
RF Output Port, matched to 50 ohms, DC blocked
Gate Voltage Control
Data Sheet Rev C, June 2021
|
Subject to change without notice
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Recommended Assembly Diagram
Data Sheet Rev C, June 2021
|
Subject to change without notice
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300 °C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Data Sheet Rev C, June 2021
|
Subject to change without notice
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TGA2526
2-20 GHz Low Noise Amplifier with AGC
®
Handling Precautions
Parameter
Rating
TBD
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharged Device Model (CDM)
ESDAꢁ/ꢁJEDEC JS-001-2017
ESDAꢁ/ꢁJEDEC JS-002-2014
Caution!
ESD-Sensitive Device
TBD
MSLꢀ–ꢀConvection Reflow 260ꢀ°C
N / A
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• SVHC Free
• PFOS Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
© 2021 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be
reproduced or distributed, in whole or in part, without the express written consent of Qorvo US, Inc.
Data Sheet Rev C, June 2021
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Subject to change without notice
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