TGA2752-SMEVALBOARD [QORVO]
7.1 â 8.5 GHz Power Amplifier;
| 型号： | TGA2752-SMEVALBOARD |
| 厂家： | 
Qorvo |
| 描述： | 7.1 â 8.5 GHz Power Amplifier |
| 文件： | 总15页 (文件大小：902K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGA2752-SM
7.1 – 8.5 GHz Power Amplifier
®
Product Overview
The Qorvo TGA2752-SM is a C-Band Power Amplifier with
integrated power detector. The TGA2752-SM operates
from 7.1 – 8.5 GHz and is designed using Qorvo’s power
GaAs pHEMT and GaN HEMT production processes.
The TGA2752-SM typically provides 40 dBm of saturated
output power with small signal gain of 28 dB. Third Order
Intercept is 48 dBm at 30 dBm SCL.
42-Lead 7.0ꢀxꢀ9.0ꢀxꢀ0.9ꢀmm Package
Key Features
The TG2752-SM is available in a low-cost, surface mount
42 lead 7 x 9 mm QFN package and is ideally suited for
Point-to-Point Radio.
• Frequency Range: 7.1 – 8.5 GHz
• Power: +40 dBm Psat
• Gain: 28 dB
Lead-free and RoHS compliant.
• TOI: 48 dBm at 30 dBm/tone
• Integrated Power Detector
• Bias: VD1 = VD2 = +6 V, ID1 + ID2 = 1000 mA, VD3 = +28
V, ID3 = 190 mA
• Package Dimensions: 7.0 x 9.0 x 0.9 mm
Applications
Functional Block Diagram
• Point-to-Point Radio
• Linear C-band Sat-Com
42 41 40 39 38 37 36 35 34 33 32 31
30
29
28
27
26
25
24
23
22
1
2
3
4
5
6
7
8
9
Ordering Information
Part No.
Description
500 pieces on a 7” reel
(standard)
10 11 12 13 14 15 16 17 18 19 20 21
TGA2752-SM T/R
Top View
TGA2752-SM Eval Board
TGA2752-SM, Sample
Evaluation Board
Waffle Tray with 4 pcs
Data Sheet Rev. B, September 2020 | Subject to change without notice
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Min
Typ
Max Units
Drain Voltage, VD1, VD2
+9ꢀV
Operating Temp. Range
−40
+25
+85
ꢀ°C
V
Drain Voltage, VD3
+32ꢀV
2443ꢀmA
825ꢀmA
VD1, VD2
VD3
+6
+28
Drain Current, ID1 + ID2
V
Drain Current, ID3
ID1ꢀ+ꢀID2
ID3
1000
190
mA
mA
V
Gate Voltage, VG12
−1.2 V / +0.5 V
−8 V / 0 V
7.2ꢀW
Gate Voltage, VG3
VG12
−0.65
−2.6
Power Dissipation, Driver Stages, PDISS
Power Dissipation, Final Stage, PDISS
RF Input Power, CW, 50ꢀΩ, Tꢀ=ꢀ25ꢀ°C
Mounting Temperature (30 Seconds)
Storage Temperature
VG3
V
ID1ꢀ+ꢀID2 drive
(at +34ꢀdBm Pout)
17ꢀW
1050
400
mA
mA
+29ꢀdBm
260ꢀ°C
ID3 drive
(at +34ꢀdBm Pout)
−40 to 150ꢀ°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Electrical Specifications
Parameter
Conditionsꢀ(1)
Min
Typ
Max
Units
RF Frequency Range
7.1
8.5
GHz
Small Signal Gain
24
28
12
dB
dB
Input Return Loss, IRL
Output Return Loss, ORL
15
dB
Output Power at Saturation, Psat
Output Power at 1 dB Gain Compression, P1dB
Output Third Order Intercept, TOI @ 30 dBm/Tone
+38
+40
+30
+48
dBm
dBm
dBm
VD3 = 10 V
VG3 = −3.7 V
GaN Gate Leakage
−4.2
mA
Gain Temperature Coefficient
−0.035
−0.012
dBꢀ/ꢀ°C
Power Temperature Coefficient
dBmꢀ/ꢀ°C
Notes:
1. Test conditions unless otherwise noted: VD1ꢀ=ꢀVD2ꢀ=ꢀ+6ꢀV, ID1ꢀ+ꢀID2ꢀ=ꢀ1000ꢀmA, VG1ꢀ=ꢀVG2ꢀ=ꢀ−0.7ꢀV, VD3−=ꢀ+28ꢀV, ID3ꢀ=ꢀ190ꢀmA, VG3ꢀ=ꢀ−2.6ꢀV, Tempꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
Data Sheet Rev. B, September 2020 | Subject to change without notice
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Thermal and Reliability Information (GaAs Driver Stages)
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
CW
6.17
ºC/W
Tbaseplate = +85 °C, VD Driver = +6 V, IDQ = 1000 mA,
PDISS = 6.0ꢁW
Channel Temperature, TCH
139
6.19
142
°C
ºC/W
°C
Thermal Resistance (θJC) (1)
CW
Tbaseplate = +85 °C, VD Driver = +6 V, ID Driver = 1050 mA,
POUTꢁ=ꢁ+34ꢁdBm, PDISS = 6.3ꢁW
Channel Temperature, TCH (Under RF)
Notes:
1. Thermal resistance measured at back of package.
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Thermal and Reliability Information (GaN Final Stage)
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
CW
5.66
ºC/W
Tbaseplate = +85 °C, VD Driver = +28 V, IDQ = 190 mA,
PDISS = 5.3ꢁW
(2)
Channel Temperature, TCH
115
5.52
133
°C
ºC/W
°C
Thermal Resistance (θJC) (1)
CW
Tbaseplate = +85 °C, VD Driver = +28 V, ID Final = 400 mA,
POUTꢁ=ꢁ+34ꢁdBm, PDISS = 8.7ꢁW
Channel Temperature, TCH (Under RF) (2)
Notes:
1. Thermal resistance measured at back of package.
2. IR scan equivalent. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability
Estimates
Data Sheet Rev. B, September 2020 | Subject to change without notice
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Performance Plots
Test conditions unless otherwise noted: VD1ꢀ=ꢀVD2ꢀ=ꢀ+6ꢀV, ID1ꢀ+ꢀID2ꢀ=ꢀ1000ꢀmA, VG1ꢀ=ꢀVG2ꢀ=ꢀ−0.65ꢀV, VD3−=ꢀ+28ꢀV, ID3ꢀ=ꢀ190ꢀmA,
VG3ꢀ=ꢀ−2.6ꢀV, Tempꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
S-Parameters vs. Frequency
S-Parameters vs. Frequency
35
30
25
20
15
10
5
0
35
30
25
20
15
10
5
0
5
5
10
15
20
25
30
10
15
20
25
30
Gain
IRL
Gain
IRL
ORL
ORL
0
0
4
5
6
7
8
9
10
11
12
7
7.2 7.4 7.6 7.8
8
8.2 8.4 8.6 8.8
9
Frequency (GHz)
Frequency (GHz)
Output Power vs. Frequency
Pout, Gain, Id vs. Pin @ 7.5 GHz
44
42
40
38
36
34
32
30
28
26
24
22
45
40
35
30
25
20
15
10
5
1800
1600
1400
1200
1000
800
Pout
Gain
Psat
P1dB
600
400
Id1 + Id2
Id3
200
0
0
6
6.5
7
7.5
8
8.5
9
-25 -20 -15 -10 -5
0
5
10 15 20
Frequency (GHz)
Input Power (dBm)
AM-PM vs. Pout vs. Frequency
TOI vs. Frequency vs. Pout/Tone
50
52
50
48
46
44
42
40
38
36
34
32
40
30
20
10
0
7.5 GHz
8.0 GHz
8.5 GHz
Pout/Tone = 28 dBm
Pout/Tone = 30 dBm
Pout/Tone = 32 dBm
-10
0
5
10
15
20
25
30
35
40
45
6
6.5
7
7.5
8
8.5
9
Outpout Power (dBm)
Frequency (GHz)
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Performance Plots
Test conditions unless otherwise noted: VD1ꢀ=ꢀVD2ꢀ=ꢀ+6ꢀV, ID1ꢀ+ꢀID2ꢀ=ꢀ1000ꢀmA, VG1ꢀ=ꢀVG2ꢀ=ꢀ−0.65ꢀV, VD3−=ꢀ+28ꢀV, ID3ꢀ=ꢀ190ꢀmA,
VG3ꢀ=ꢀ−2.6ꢀV, Tempꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
IM3 vs. Pout/Tone vs. Frequency
IM5 vs. Pout/Tone vs. Frequency
-5
-10
-15
-20
-25
-30
-35
-40
-45
-25
-30
-35
-40
-45
-50
-55
-60
-65
7.5 GHz
8.0 GHz
8.5 GHz
7.5 GHz
8.0 GHz
8.5 GHz
20
22
24
26
28
30
32
34
36
38
20
22
24
26
28
30
32
34
36
38
Output Power (dBm/Tone)
Output Power (dBm/Tone)
Gain vs. Frequency vs. Bias
Gain vs. Frequency vs. Bias
Vd1 = Vd2 = 6 V, Id1 + Id2 = 1000 mA, Vg12 = - 0.65 V Typical
Vd3 = 28 V, Id3 = 190 mA, Vg3 = - 2.6 V Typical
34
32
30
28
26
24
22
20
18
16
14
34
32
30
28
26
24
22
20
18
16
14
7V 1000mA
6V 1000mA
6V 800mA
6V 600mA
28V 190mA
28V 95mA
24V 190mA
24V 95mA
7
7.2 7.4 7.6 7.8
8
8.2 8.4 8.6 8.8
9
7
7.2 7.4 7.6 7.8
8
8.2 8.4 8.6 8.8
9
Frequency (GHz)
Frequency (GHz)
Psat vs. Frequency vs. Bias
Psat vs. Frequency vs. Bias
Vd1 = Vd2 = 6 V, Id1 + Id2 = 1000 mA, Vg12 = -0.65 V Typical
Vd3 = 28 V, Id3 = 190 mA, Vg3 = -2.6 V Typical
43
42
41
40
39
38
37
36
35
34
33
43
42
41
40
39
38
37
36
35
34
33
7V 1000mA
6V 1000mA
6V 800mA
6V 600mA
28V 190mA
28V 95mA
24V 190mA
24V 95mA
6
6.5
7
7.5
8
8.5
9
6
6.5
7
7.5
8
8.5
9
Frequency (GHz)
Frequency (GHz)
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Performance Plots
Test conditions unless otherwise noted: VD1ꢀ=ꢀVD2ꢀ=ꢀ+6ꢀV, ID1ꢀ+ꢀID2ꢀ=ꢀ1000ꢀmA, VG1ꢀ=ꢀVG2ꢀ=ꢀ−0.65ꢀV, VD3−=ꢀ+28ꢀV, ID3ꢀ=ꢀ190ꢀmA,
VG3ꢀ=ꢀ−2.6ꢀV, Tempꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
P1dB vs. Frequency vs. Bias
P1dB vs. Frequency vs. Bias
Vd1 = Vd2 = 6 V, Id1 + Id2 = 1000 mA, Vg12 = -0.65 V Typical
Vd3 = 28 V, Id3 = 190 mA, Vg3 = -2.6 V Typical
34
32
30
28
26
24
22
20
18
34
32
30
28
26
24
22
20
18
7V 1000mA
6V 1000mA
6V 800mA
6V 600mA
28V 190mA
28V 95mA
24V 190mA
24V 95mA
6
6.5
7
7.5
8
8.5
9
6
6.5
7
7.5
8
8.5
9
Frequency (GHz)
Frequency (GHz)
TOI vs. Frequency vs. Bias
TOI vs. Frequency vs. Bias
Vd1 = Vd2 = 6 V, Id1 + Id2 = 1000 mA, Vg12 = - 0.65 V Typical
Vd3 = 28 V, Id3 = 190 mA, Vg3 = - 2.6 V Typical
56
54
52
50
48
46
44
42
40
38
36
52
50
48
46
44
42
40
38
36
34
32
7V 1000mA
6V 1000mA
6V 800mA
6V 600mA
28V 190mA
28V 95mA
24V 190mA
24V 95mA
6
6.5
7
7.5
8
8.5
9
6
6.5
7
7.5
8
8.5
9
Frequency (GHz)
Frequency (GHz)
Power Detector vs. Pout vs. Frequency
10
7.1 GHz
7.7 GHz
8.5 GHz
1
0.1
0.01
5
10
15
20
25
30
35
40
45
Output Power (dBm)
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Performance Plots
Test conditions unless otherwise noted: VD1ꢀ=ꢀVD2ꢀ=ꢀ+6ꢀV, ID1ꢀ+ꢀID2ꢀ=ꢀ1000ꢀmA, VG1ꢀ=ꢀVG2ꢀ=ꢀ−0.65ꢀV, VD3−=ꢀ+28ꢀV, ID3ꢀ=ꢀ190ꢀmA,
VG3ꢀ=ꢀ−2.6ꢀV, Tempꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
Gain vs. Frequency vs. Temperature
Psat vs. Frequency vs. Temperature
36
34
32
30
28
26
24
22
20
18
16
44
42
40
38
36
34
32
30
-40°C
+25°C
+85°
-40°C
+25°C
+85°C
7
7.2 7.4 7.6 7.8
8
8.2 8.4 8.6 8.8
9
6
6.5
7
7.5
8
8.5
9
Frequency (GHz)
Frequency (GHz)
P1dB vs. Frequency vs. Temperature
TOI vs. Frequency vs. Temperature
34
32
30
28
26
24
22
20
18
58
56
54
52
50
48
46
44
42
40
38
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
6
6.5
7
7.5
8
8.5
9
6
6.5
7
7.5
8
8.5
9
Frequency (GHz)
Frequency (GHz)
Power Detector vs. Pout vs. Temperature
10
-40°C
+25°C
+85°C
1
0.1
0.01
0
5
10
15
20
25
30
35
40
45
Output Power (dBm)
Data Sheet Rev. B, September 2020 | Subject to change without notice
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Pin Configuration and Description
42 41 40 39 38 37 36 35 34 33 32 31
46
43
30
29
28
27
26
25
24
23
22
1
2
3
4
5
6
7
8
9
47
10 11 12 13 14 15 16 17 18 19 20 21
45
44
Label
NC
Top View
Pad No.
Description
1, 2, 3, 4, 6, 7, 8, 9,11,
13, 15, 16, 17, 18, 19,
21, 22, 23, 24, 25, 27,
28, 29, 33, 34, 35, 37,
39, 41
No internal connection; can be grounded on PCB.
5
RF IN
VG12
RF Input, matched to 50ꢀΩ, AC Coupled.
Gate voltage. Bias network is required; can be biased from either pin, and non-
biased pin can be left open; see Application Circuit on page 11 as an example.
10, 42
Drain voltage; must be biased from both sides. Bias network is required; see
Application Circuit on page 11 as an example.
12, 40
14, 38
20, 32
VD1
VD2
VD3
Drain voltage; must be biased from both sides. Bias network is required; see
Application Circuit on page 11 as an example.
Drain voltage; must be biased from both sides. Bias network is required; see
Application Circuit on page 11 as an example.
26
30
31
RF OUT RF Output, matched to 50 ohms, AC Coupled.
VREF
VDET
Reference diode output voltage.
Detector diode output voltage. Varies with RF output power.
Gate voltage. Bias network is required; see Application Circuit on page 11 as an
example.
36
VG3
Backside Paddle. Multiple vias should be employed to minimize inductance and
thermal resistance; see Mounting Configuration on page 14 for suggested
footprint.
43, 44, 45, 46, 47
GND
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Application Circuit
Vd1, Vd2
Vg3
Vd3
Vg12
42 41 40 39 38 37 36 35 34 33 32 31
1
2
3
4
5
6
7
8
9
30
29
28
27
26
25
24
23
22
TGA2752-SM
10 11 12 13 14 15 16 17 18 19 20 21
Vg12
Vd3
Vd1, Vd2
VG12 can be biased from either side, and the non-biased side can be left open.
VD1, VD2, VD3, must be biased from both sides.
Bias-up Procedure
VG12 set to −1.2ꢀV
VG3 set to −3.5ꢀV
Bias-down Procedure
Turn off RF signal
Reduce VG12 to −1.2ꢀV. Ensure ID ~ 0ꢀmA
Reduce VG3 to −3.5ꢀV. Ensure ID ~ 0ꢀmA
Turn VD1, VD2, VD3 to 0ꢀV
VD1, VD2 set to +6ꢀV
VD3 sets to +28ꢀV
Adjust VG12 more positive until quiescent ID is 1000ꢀmA
Adjust VG3 more positive until quiescent ID is 190ꢀmA
Turn VG12, VG3 to 0ꢀV
Apply RF signal
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Application Evaluation Board
R6
R4
R5
C15
C16
R2
C5
U1
C1
R1
C4
C12
1. Board Material is RO4003 0.008” thickness with ½ oz. copper cladding
Bill of Material
Reference Des.
n/a
Value
n/a
Description
Manuf.
Qorvo
Part Number
Printed Circuit Board
C1ꢀ–ꢀC9
C10ꢀ–ꢀC17
R1ꢀ–ꢀR3
R4, R5
100ꢀpF
1ꢀµF
Cap, 0402, +50ꢀV, 5%, COG
Cap, 0603, +50ꢀV, 5%, X5R
Res, 0402, 1/16W, 5%, SMD
Res, 0603, 1/16W, 5%, SMD
Res, 0805, 1/16W, 5%, SMD
7.1ꢀ–ꢀ8.5ꢀGHz Power Amplifier
various
various
various
various
various
Qorvo
10ꢀΩ
20ꢀKΩ
0ꢀΩ
R6, R7
U1
TGA2752-SM
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Package Marking and Dimensions
MARKING:
PART NUMBER – TGA2752-SM
LOT CODE – MXXXXXXX
PACKAGE EXPOSED METALLIZATION IS GOLD PLATED
PART IS OVERMOLD ENCAPSULATED
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the leads is Ni-Pd-
Au. It is compatible with lead-free (maximum 260 °C reflow temperature) soldering process.
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
PCB Mounting Pattern
RFin
RFout
Notes:
1. The pad pattern shown has been developed and tested for optimized assembly at Qorvo. The PCB land pattern has been
developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company,
careful process development is recommended.
2. Ground vias are critical for the proper performance of this device. Vias should have a final plated thru diameter of .1524ꢀmm
(.006”).
3. For best thermal performance, vias under the ground paddle should be copper filled.
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Tape and Reel Information
Feature
Measure
Symbol
Size (in)
0.366
0.287
0.047
0.472
0.079
0.217
0.362
0.630
Size (mm)
9.3
Length
A0
B0
K0
P1
P2
F
Width
7.3
Cavity
Depth
1.2
Pitch
12.0
2.0
Cavity to Perforation - Length Direction
Centerline Distance
Cavity to Perforation - Width Direction
5.50
9.20
16.0
Cover Tape
Carrier Tape
Width
Width
C
W
Notes:
1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A.
2. Labels are placed on the flange opposite the sprockets in the carrier tape.
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TGA2752-SM
®
7.1 – 8.5 GHz Power Amplifier
Handling Precautions
Parameter
Rating
Standard
ESDꢁ–ꢁHuman Body Model (HBM)
Class 1A
ESDAꢀ/ꢀJEDEC JS-001
JEDEC JESD22-C10
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
ESDꢁ–ꢁCharged Device Model (CDM) Class C1
MSLꢁ–ꢁMoisture Sensitivity Level
Level 3
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
© 2020 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be
reproduced or distributed, in whole or in part, without the express written consent of Qorvo US, Inc.
Data Sheet Rev. B, September 2020 | Subject to change without notice
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