TGA4549-SMEVB01 [QORVO]
21.2 â 23.6 GHz 10 W GaN Power Amplifier;
| 型号： | TGA4549-SMEVB01 |
| 厂家： | 
Qorvo |
| 描述： | 21.2 â 23.6 GHz 10 W GaN Power Amplifier |
| 文件： | 总17页 (文件大小：1055K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Product Overview
Qorvo’s TGA4549-SM is a high frequency, high power
MMIC amplifier fabricated on Qorvo’s production 0.15um
GaN on SiC process (QGaN15). The TGA4549-SM
operates from 21.2 – 23.6 GHz and typically provides 10 W
saturated output power with power-added efficiency of 20%
and large-signal gain of 17 dB. This combination of high
frequency performance provides the flexibility designers
are looking for to improve system performance while
reducing size and cost. The TGA4549-SM also has an
integrated power detector to support system diagnostics
and other needs.
24-Lead 5.0ꢀxꢀ5.5ꢀxꢀ1.7ꢀmm Air Cavity Laminate Package
The TGA4549-SM is offered in a small 5x5.5 mm surface
mount package, matched to 50Ω with integrated DC
blocking capacitors on both RF ports simplifying system
integration. The frequency coverage and operational
flexibility allows it support satellite communication as well
as point to point data links.
Key Features
Frequency Range:ꢀ21.2 – 23.6 GHz
PSAT (PIN=23 dBm): 40 dBm
PAE (PIN=23 dBm): 20 %
Small Signal Gain:ꢀ22ꢀdB
Large Signal Gain: 17 dB
Integrated Power Detector
The TGA4549-SM is 100% DC and RF on-wafer tested to
ensure compliance to electrical specifications.
Bias: VD1ꢀ= VD2 = VD3 =ꢀ+28ꢀV, ID1 + ID2 + ID3 = 300ꢀmA
Package Dimensions: 5.0 x 5.5 x 1.7 mm
Lead-free and RoHS compliant.
Performance is typical across frequency. Please
reference electrical specification table and data plots
for more details.
Functional Block Diagram
Applications
Point-to-Point Radio
Satellite Communications
Ordering Information
Part No.
Description
TGA4549-SM
21.2 – 23.6 GHz 10 W GaN PA
200 pieces on a 7” reel (standard)
500 pieces on a 7” reel
Evaluation Board
TGA4549-SMTR7X
TGA4549-SMTR7
TGA4549-SMEVB01
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
1 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
29.5 V
Parameter
Min
Typ
+28
300
Max Units
Drain Voltage (VD)
Drain Voltage (VD)
Drain Current, Quiescent (IDQ
V
Gate Voltage Range (VG)
-8 to 0 V
500 mA
500 mA
2 A
)
mA
Drain Current Stage 1 (ID1), Top or Bottom
Drain Current Stage 2 (ID2), Top or Bottom
Drain Current Stage 3 (ID3), Top and Bottom
Gate Current (IG),
Drain Current, RF (ID_Drive
)
See chart page 5
−2.1 to -2.8
mA
V
Gate Voltage Typ. Range (VG)
See chart
26 dBm
45 W
Gate Current, RF (IG_Drive
Operating Temp. Range
)
See chart page 5
mA
°C
RF Input Power, CW, 50ꢁΩ, T=25ꢁ°C
Dissipated Power (PDISS), CW, 85°C
Reference Diode Current (Iref)
−40
+25
+85
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
4 mA
Detector Diode Current (Idet
Storage Temperature
)
4 mA
−55 to +150ꢁ°C
260ꢁ°C
Gate Current Maximum vs. TCH vs. Stage
Mounting Temperature (30 seconds)
100
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Total
90
Stage 3
80
Stage 2
70
60
50
40
30
20
10
0
Stage 1
110
120
130
140
150
160
170
180
Channel Temperature (0C)
Electrical Specifications
Parameter
Conditionsꢀ(1) (2)
Min
Typ
Max
Units
GHz
dB
Operational Frequency Range
Small Signal Gain, S21
Input Return Loss, IRL
Output Return Loss, ORL
Output Power at Saturation, PSAT
Power Added Efficiency, PAE
Third Order Intermodulation, IM3
S21 Temperature Coefficient
PSAT Temperature Coefficient
Gate Leakage
21.2
23.6
22
9
dB
12
dB
PIN = +23 dBm
40
dBm
%
PIN = +23 dBm
20
POUT = +34 dBm/tone
Tdiff = (85 – (−40)) °C
Tdiff = (85 – (−40)) °C, Pin = +23 dBm
VD = +28 V, VG = -5 V
25
dBc
−0.03
−0.02
-1
dB/°C
dBm/°C
mA
-8
0
Notes:
1. Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
2. TBASE is back side of package
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
2 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
Output Power vs. Frequency vs. TBASE
42
PIN = 23 dBm
41
40
39
38
37
36
35
34
-40C
+25C
33
32
31
30
+85C
19
20
21
22
23
24
25
Frequency (GHz)
Output Power vs. Frequency vs. Bias
Output Power vs. Frequency vs. Pin
42
41
40
39
38
37
36
35
34
33
32
31
30
42
41
40
39
38
37
36
35
34
33
32
31
30
TBASE = 25 °C
PIN = 23 dBm
TBASE = 25 °C
28V_600mA
28V_300mA
25V_600mA
25V_300mA
22V_600mA
22V_300mA
Pin = 25 dBm
Pin = 23 dBm
Pin = 21 dBm
Pin = 19 dBm
19
20
21
22
23
24
25
19
20
21
22
23
24
25
Frequency (GHz)
Frequency (GHz)
Output Power vs. Pin vs. TBASE
Output Power vs. Pin vs. Frequency
42
40
38
36
34
32
30
28
26
24
22
20
18
16
42
40
38
36
34
32
30
28
26
24
22
20
18
16
Frequency = 22 GHz
TBASE = 25 °C
21.2 GHz
22 GHz
22.5 GHz
23 GHz
23.6 GHz
-40C
+25C
+85C
-10
-5
0
5
10
15
20
25
-10
-5
0
5
10
15
20
25
Pin (dBm)
Pin (dBm)
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
3 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
PAE vs. Frequency vs. TBASE
PAE vs. Output Power vs. Bias
26
24
22
20
18
16
14
12
10
26
24
22
20
18
16
14
12
10
8
PIN = 23 dBm
Frequency = 22 GHz
TBASE = 25 °C
28V_600mA
28V_300mA
25V_600mA
25V_300mA
22V_600mA
22V_300mA
-40C
+25C
+85C
6
4
2
0
19
20
21
22
23
24
25
25
25
10
14
18
22
26
30
34
38
42
25
25
Frequency (GHz)
Output Power (dBm)
PAE vs. Frequency vs. Bias
PAE vs. Frequency vs. Pin
26
24
22
20
18
16
14
12
10
26
24
22
20
18
16
14
12
10
TBASE = 25 °C
PIN = 23 dBm
TBASE = 25 °C
28V_600mA
28V_300mA
25V_600mA
25V_300mA
22V_600mA
22V_300mA
Pin = 25 dBm
Pin = 23 dBm
Pin = 21 dBm
Pin = 19 dBm
19
20
21
22
23
24
19
20
21
22
23
24
Frequency (GHz)
Frequency (GHz)
PAE vs. Pin vs. TBASE
PAE vs. Pin vs. Frequency
26
24
22
20
18
16
14
12
10
8
26
24
22
20
18
16
14
12
10
8
Frequency = 22 GHz
TBASE = 25 °C
21.2 GHz
22 GHz
22.5 GHz
23 GHz
23.6 GHz
-40C
+25C
+85C
6
6
4
4
2
2
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
4 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
Large Signal Gain vs. Pin vs. TBASE
Large Signal Gain vs. Pin vs. Frequency
36
34
32
30
28
26
24
22
20
18
16
14
12
10
36
34
32
30
28
26
24
22
20
18
16
14
12
10
Frequency = 22 GHz
TBASE = 25 °C
21.2 GHz
22 GHz
22.5 GHz
23 GHz
23.6 GHz
-40C
+25C
+85C
-10
-5
0
5
10
15
20
25
25
25
-10
-5
0
5
10
15
20
25
25
25
Pin (dBm)
Pin (dBm)
Drain Current vs. Frequency vs. TBASE
Drain Current vs. Pin vs. Frequency
2200
2000
1800
1600
1400
1200
1000
800
2200
2000
1800
1600
1400
1200
1000
800
PIN = 23 dBm
TBASE = 25 °C
21.2 GHz
22 GHz
22.5 GHz
23 GHz
23.6 GHz
600
-40C
+25C
+85C
400
200
600
0
19
20
21
22
23
24
-10
-5
0
5
10
15
20
Frequency (GHz)
Pin (dBm)
Gate Current vs. Frequency vs. TBASE
Gate Current vs. Pin vs. Frequency
5
4
5
4
PIN = 23 dBm
TBASE = 25 °C
3
3
2
2
1
1
0
0
-1
-2
-3
-4
-5
-1
-2
-3
-4
-5
21.2 GHz
22 GHz
22.5 GHz
23 GHz
23.6 GHz
-40C
+25C
+85C
19
20
21
22
23
24
-10
-5
0
5
10
15
20
Frequency (GHz)
Pin (dBm)
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
5 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
AM-PM vs. Frequency
AM-AM vs. Frequency
180
140
100
60
36
34
32
30
28
26
24
22
20
18
16
14
12
10
TBASE = 25 °C
TBASE = 25 °C
20
-20
-60
-100
-140
-180
21.2 GHz
22 GHz
22.5 GHz
23 GHz
23.6 GHz
21.2 GHz
22 GHz
22.5 GHz
23 GHz
23.6 GHz
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Pout (dBm)
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Pout (dBm)
AM-PM vs. TBASE
AM-AM vs. TBASE
180
140
100
60
36
34
32
30
28
26
24
22
20
18
16
14
12
10
Frequency = 22 GHz
Frequency = 22 GHz
20
-20
-60
-40C
+25C
+85C
-40C
+25C
+85C
-100
-140
-180
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Pout (dBm)
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Pout (dBm)
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
6 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Performance Plots – Power Detector
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
Power Detector vs. Pout vs. Frequency
Power Detector vs. Pout vs. TBASE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-0.1
-0.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-0.1
-0.2
Frequency = 22 GHz
TBASE = 25 °C
21.2 GHz
22 GHz
22.5 GHz
23 GHz
23.6 GHz
+25C
-40C
+85C
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Pout (dBm)
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Pout (dBm)
Detector Diode vs. Pout vs. Frequency
Detector Diode vs. Pout vs. TBASE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Frequency = 22 GHz
TBASE = 25 °C
21.2 GHz
22 GHz
22.5 GHz
23 GHz
23.6 GHz
+25C
-40C
+85C
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Pout (dBm)
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Pout (dBm)
Reference Diode vs. Pout vs. Frequency
Reference Diode vs. Pout vs. TBASE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Frequency = 22 GHz
TBASE = 25 °C
21.2 GHz
22 GHz
22.5 GHz
23 GHz
23.6 GHz
+25C
-40C
+85C
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Pout (dBm)
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Pout (dBm)
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
7 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Performance Plots – Linearity
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
IM3 and IM5 vs. Output Power vs. TBASE
IM3 vs. Frequency vs. Bias
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-5
Frequency = 21.2 GHz
TBASE = 25 °C
Frequency = 21.2 GHz
Δf = 10 MHz
Δf = 10 MHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
-40C IM3
28V_600mA
28V_300mA
25V_600mA
25V_300mA
22V_600mA
22V_300mA
+25C IM3
+85C IM3
-40C IM5
+25C IM5
+85C IM5
10
14
18
22
26
30
34
38
42
10
10
10
14
18
22
26
30
34
38
42
Output Power per Tone (dBm)
Frequency (GHz)
IM3 and IM5 vs. Output Power vs. TBASE
IM3 vs. Frequency vs. Bias
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-5
Frequency = 22 GHz
TBASE = 25 °C
Frequency = 22 GHz
Δf = 10 MHz
Δf = 10 MHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
-40C IM3
28V_600mA
28V_300mA
25V_600mA
25V_300mA
22V_600mA
22V_300mA
+25C IM3
+85C IM3
-40C IM5
+25C IM5
+85C IM5
10
14
18
22
26
30
34
38
42
14
18
22
26
30
34
38
42
Output Power per Tone (dBm)
Frequency (GHz)
IM3 vs. Frequency vs. Bias
0
-5
IM3 and IM5 vs. Output Power vs. TBASE
TBASE = 25 °C
Frequency = 23.6 GHz
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
Frequency = 23.6 GHz
Δf = 10 MHz
Δf = 10 MHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
28V_600mA
28V_300mA
25V_600mA
25V_300mA
22V_600mA
22V_300mA
-40C IM3
+25C IM3
+85C IM3
-40C IM5
+25C IM5
+85C IM5
14
18
22
26
30
34
38
42
10
14
18
22
26
30
34
38
42
Frequency (GHz)
Output Power per Tone (dBm)
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
8 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
Small Signal Gain vs. Frequency vs. TBASE
Small Signal Gain vs. Frequency vs. Bias
36
34
32
30
28
26
24
22
20
18
16
14
12
10
36
34
32
30
28
26
24
22
20
18
16
14
12
10
TBASE = 25 °C
28V_600mA
28V_300mA
25V_600mA
25V_300mA
22V_600mA
22V_300mA
-40C
+25C
+85C
19
19
19
20
21
22
23
24
25
25
25
19
19
19
20
21
22
23
24
25
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Frequency vs. TBASE
Input Return Loss vs. Frequency vs. Bias
0
-3
-3
-6
TBASE = 25 °C
-6
-9
-9
-12
-15
-18
-21
28V_600mA
28V_300mA
25V_600mA
25V_300mA
22V_600mA
22V_300mA
-12
-15
-18
-21
-40C
+25C
+85C
20
21
22
23
24
20
21
22
23
24
25
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Frequency vs. TBASE
Output Return Loss vs. Frequency vs. Bias
0
-3
-3
-6
TBASE = 25 °C
-6
-9
-9
-12
-15
-18
-21
28V_600mA
28V_300mA
25V_600mA
25V_300mA
22V_600mA
22V_300mA
-12
-15
-18
-21
-40C
+25C
+85C
20
21
22
23
24
20
21
22
23
24
25
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
9 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
2.38
ºC/W
TBASE = 85 °C, VD = 28 V, IDQ = 300 mA, Freq = 23 GHz,
PDISS = 8.4 W
Channel Temperature, TCH (Under RF) (2)
105
2.44
173
°C
ºC/W
°C
Thermal Resistance (θJC) (1)
TBASE = 85 °C, VD = 28 V, IDQ = 300 mA, Freq = 2 GHz,
ID_DRIVE ≈ 1.64 A, PIN = 23 dBm, POUT = 40 dBm,
PDISS = 36 W
Channel Temperature, TCH (Under RF) (2)
Notes:
1. Thermal resistance determined to the back of package TBASE
2. Channel temperature indicated is an IR scan equivalent temperature. Thermal resistance is calculated using this value.
Additional information can be found in the Qorvo Applications Note “GaN Device TCHMAX Theta-JC and Reliability
Estimates,” located here https://www.qorvo.com/products/d/da006480
RJC and TCH vs. Power Dissipated
2.5
2.4
2.3
2.2
2.1
2.0
200
180
160
140
120
100
TBASE = 85 °C
Rjc
Tch
10
15
20
25
PDISS (W)
30
35
40
Power Dissipated vs. Frequency vs. Pin
Power Dissipated vs. Frequency vs. Bias
50
45
40
35
30
25
20
15
10
5
50
PIN = 23 dBm
TBASE = 85 °C
TBASE = 85 °C
45
40
35
30
25
20
15
10
5
28V_600mA
28V_300mA
25V_600mA
25V_300mA
22V_600mA
22V_300mA
Pin = 25 dBm
Pin = 23 dBm
Pin = 21 dBm
Pin = 19 dBm
0
0
19
20
21
22
23
24
25
19
20
21
22
23
24
25
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
10 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Recommended Application Circuit
1
15
13
TGA4549-SM
3
Notes:
1. VG1, VG2, and VG3 can be biased from either top side or bottom side; the non-biased side can be left open but bias network is required
2. VD1, VD2, and VD3 must be biased from both sides.
3. Tied all VD’s together; tied all VG’s together
Bias Up Procedure
1. Set ID limit to 3000 mA, IG limit to 10ꢁmA
Bias Down Procedure
1. Turn off RF supply
2. Apply −5ꢁV to VG
2. Reduce VG to −5ꢁV; ensure IDQ is approx. 0ꢁmA
3. Set VD to 0ꢁV
3. Apply +28ꢁV to VD; ensure IDQ is approx. 0ꢁmA
4. Adjust VG until IDQ = 300ꢁmA (VG ~ −2.5 +/- 0.4 V Typ.).
5. Turn on RF supply
4. Turn off VD supply
5. Turn off VG supply
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
11 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Application Evaluation Board (EVB)
Gnd VD1 VD2
VD3 VDET VREF
RFIN
RFOUT
VG1 VG2 VG3
VD1 VD2 VD3
Notes:
1. Board Material is RO4003 0.008” thickness with ½ oz. copper cladding
2. Vias under the ground paddle are copper filled.
Bill of Material –ꢀEvaluation Board (EVB)
Reference Des.
Value Description
Manuf.
Part Number
n/a
U1
n/a
n/a
Printed Circuit Board
Qorvo
Qorvo
17.7 – 19.7 GHz Power Amplifier
TGA4549-SM
C7, C9, C11, C19,
C21, C23
100pF
1uF
Cap, 0402, 50 V, 5%, COG
various
various
C1, C3, C5, C13,
C15, C17
Cap, 0805, 50 V, 5%, X5R
R1-R6
R7, R8
R9
10Ω
20kΩ
50Ω
Resistor, 0402, 5%, 1/16W, SMD
Resistor, 0805, 5%, SMD
various
various
various
Resistor, 0402, 5%, 1/16W, SMD
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
12 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Pad Configuration and Description
Top View
Bottom View
Pad No.
Label
Description
1, 3, 7, 13, 15, 21 GND
Ground. Must be grounded on PCB (same as Pad 25)
2
RFIN
VG1
RF input, matched to 50Ω, AC coupled.
4, 24
5, 23
6, 22
8, 20
9, 19
10, 18
11, 17
12, 16
14
Gate voltage, stage 1. Bias network is required; see Recommended Application Circuit on page 12
Gate voltage, stage 2. Bias network is required; see Recommended Application Circuit on page 12
Gate voltage, stage 3. Bias network is required; see Recommended Application Circuit on page 12
Drain voltage, stage 1. Bias network is required; see Recommended Application Circuit on page 12
Drain voltage, stage 2. Bias network is required; see Recommended Application Circuit on page 12
Drain voltage, stage 3. Bias network is required; see Recommended Application Circuit on page 12
Detector diode output voltage. Varies with RF output power.
VG2
VG3
VD1
VD2
VD3
VDET
VREF
RFOUT
Reference diode output voltage
RF output, matched to 50Ω, AC coupled.
Backside paddle. Multiple conductive filled vias should be employed to minimize inductance and
thermal resistance; see Mounting Configuration on page 15 for suggested footprint.
25
GND
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
13 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Package Marking and Dimensions
Units: millimeters
Tolerances: unless specified
x.xx = ± 0.25 x.xxx = ± 0.100 Angles = 0.50
Materials:
Base: EHS Laminate
Lid: Laminate
All metalized features are gold plated; Part is epoxy sealed
Marking:
TGA4549-SM: Part number
MXXXXXXX: where XXXXXXX represents assembly lot number
PCB Mounting Pattern
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Ground vias are critical for the proper performance of this device. Vias should have a final plated thru diameter of .1524ꢀmm (.006”).
3. For best thermal performance, vias under the ground paddle should be copper filled.
4. The pad pattern shown has been developed and tested for optimized assembly at Qorvo. The PCB land pattern has been developed to
accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is
recommended.
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
14 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Tape and reel Information
Standard T/R size = 200 pieces on a 7” reel
Dimensions: millimeters (mm)
Tolerances unless otherwise noted: .X = ± .2; .XX = ± .10
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
15 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Assembly Notes
Compatible with lead-free soldering processes with 260°C peak reflow temperature.
This package is air-cavity and non-hermetic, and therefore cannot be subjected to aqueous washing. The use of no-clean
solder to avoid washing after soldering is highly recommended.
Contact plating: Ni-Au
Solder rework not recommended
Recommended Soldering Temperature Profile
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
16 of 17
www.qorvo.com
TGA4549-SM
®
21.2 – 23.6 GHz 10 W GaN Power Amplifier
Handling Precautions
Parameter
Rating Standard
Caution!
ESD-Sensitive Device
ESDꢁ–ꢁHuman Body Model (HBM)
MSLꢁ–ꢁMoisture Sensitivity Level
1A
3
ANSI/ESD/JEDEC JS-001
IPC/JEDEC J-STD-020
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
Lead Free
Antimony Free
TBBP-A (C15H12Br402) Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. C, May 27, 2020 | Subject to change without notice
17 of 17
www.qorvo.com
相关型号：
©2020 ICPDF网 联系我们和版权申明