TGF3020-SMEVBP01 [QORVO]
4 â 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor;
| 型号： | TGF3020-SMEVBP01 |
| 厂家： | 
Qorvo |
| 描述： | 4 â 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor |
| 文件： | 总24页 (文件大小：2208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Product Overview
The Qorvo TGF3020-SM is a 5W (P3dB), 50 input matched
discrete GaN on SiC HEMT which operates from 4.0 to 6.0
GHz. The integrated input matching network enables
wideband gain and power performance, while the output can
be matched on board to optimize power and efficiency for
any region within the band.
The device is housed in an industry-standard 3 x 3 mm
surface mount QFN package.
3 x 3mm QFN package
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Key Features
• Frequency: 4 to 6 GHz
• Output Power (P3dB)1: 6.8 W
• Linear Gain1: 13 dB
Functional Block Diagram
• Typical PAE3dB1: 60%
16
15
14
13
• Operating Voltage: 32 V
• CW and Pulse capable
1
12
Note 1: @ 5 GHz Load Pull
2
3
11
10
Input
Matching
NW
Applications
• Telemetry
4
9
• C-band radar
• Communications
• Test instrumentation
• Wideband amplifiers
• 5.8GHz ISM
5
6
7
8
Ordering info
Part No. ECCN
TGF3020-SM EAR99
Description
QFN Packaged Part
TGF3020-
EAR99
5.3 – 5.9 GHz EVB
4 – 6 GHz EVB
SMEVBP01
TGF3020-
SMEVBP02
EAR99
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 1 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Absolute Maximum Ratings1
Recommended Operating Conditions1
Parameter
Min Typ Max Units
Parameter
Rating
Units
Operating Temp. Range
Drain Voltage Range, VD
Drain Bias Current, IDQ
−40 +25 +85
+12 +32 +40
25
ꢁ°C
V
Breakdown Voltage,BVDG
Gate Voltage Range, VG
Drain Current, IDMAX
+100
-7 to +2.0
0.6
V
V
mA
A
A
4
Drain Current, ID
–
–
–
–
–
0.25
−2.8
–
–
–
Gate Current Range, IG
See page 16.
7.5
mA
W
3
Gate Voltage, VG
V
2
Power Dissipation, PDISS
Channel Temperature (TCH)
Power Dissipation (PD)2,4
Power Dissipation (PD), CW2
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85 °C
225
9.1
6.5
°C
W
W
RF Input Power, CW, T =
25ꢀ°C
+30
275
dBm
°C
–
–
Channel Temperature, TCH
Mounting Temperature
(30ꢀSeconds)
320ꢁ
°C
Storage Temperature
Notes:
−65 to +150
°C
3. To be adjusted to desired IDQ
4. Pulsed, 100uS PW, 20% DC
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
2. Pulsed 100uS PW, 20% DC
Measured Load Pull Performance – Power Tuned1, 2
Typical Values
Parameter
Units
GHz
V
Frequency, F
4
4.4
32
25
5
5.5
32
25
Drain Voltage, VD
Drain Bias Current, IDQ
32
25
32
25
mA
Output Power at 3dB
compression, P3dB
38.4
38.3
38.3
38.2
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
50.1
9.6
50.4
9.7
49.5
9.7
53.0
10.3
%
Gain at 3dB compression, G3dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
dB
2. Load-pull characteristic Impedance, Zo = 50 Ω.
Measured Load Pull Performance – Efficiency Tuned1, 2
Parameter
Typical Values
Units
GHz
V
Frequency, F
2.7
32
25
2.9
32
25
3.1
32
25
3.3
32
25
Drain Voltage, VD
Drain Bias Current, IDQ
mA
Output Power at 3dB
compression, P3dB
37.6
36.8
37.1
36.8
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
60.1
10.3
61.5
10.3
59.6
10.1
59
%
Gain at 3dB compression, G3dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
10.7
dB
2. Load-pull characteristic Impedance, Zo = 50 Ω.
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 2 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
RF Characterization 5.3 – 5.9 GHz EVB – 5.4 GHz Performance1
Parameter
Min
–
Typ
11.7
5.7
Max
Units
ꢁdB
Linear Gain, GLIN
–
–
Output Power at 3dB compression point, P3dB
–
W
Drain Efficiency at 3dB compression point,
DEFF3dB
–
–
53.1
8.7
–
–
%
Gain at 3dB compression point, G3dB
Notes:
dB
1. VD = +32ꢁV, IDQ = 25ꢁmA, Temp=+25ꢁ°C, PulseWidth=100uS, DutyCycle=20%
RF Characterization 4 – 6.0 GHz EVB – 4.7 GHz Performance1
Parameter
Linear Gain, GLIN
Min
–
Typ
11.8
5.6
Max
Units
ꢁdB
–
–
Output Power at 3dB compression point, P3dB
–
W
Drain Efficiency at 3dB compression point,
DEFF3dB
–
–
51.7
8.8
–
–
%
Gain at 3dB compression point, G3dB
Notes:
dB
1. VD = +32ꢁV, IDQ = 25ꢁmA, Temp = +25ꢁ°C, Pulse Width = 100 uS, Duty Cycle = 20%
RF Characterization – Mismatch Ruggedness at 5.3 and 5.9 GHz
Symbol Parameter
VSWR
dB Compression
Typical
Impedance Mismatch Ruggedness
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA
Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector.
3
ꢁ10:1
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 3 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 17 for load pull reference planes where the performance was measured.
4GHz, Load-pull
Zs(1fo) = 23.25-20.34i
Zs(2fo) = 21.61+5.89i
Ω
Max Power is 38.4dBm
at Z = 24.344+16.398i
•
Ω
Ω
= -0.2827+0.2829i
Max Gain is 10.3dB
Γ
•
at Z = 17.146+29.144i
= -0.2532+0.5439i
Ω
Ω
Γ
Max PAE is 60.1%
at Z = 17.146+29.144i
•
= -0.2532+0.5439i
Γ
10
58.7
9.5
9
48.7
52.7
50.7
38.4
38.2
38
Power
Gain
PAE
Zo = 50
3dB Compression Referenced to Peak Gain
Ω
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 4 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 17 for load pull reference planes where the performance was measured.
4.4GHz, Load-pull
Zs(1fo) = 24-22.43i
Zs(2fo) = 42.06-1.87i
Ω
Max Power is 38.3dBm
at Z = 24.314+16.373i
•
Ω
Ω
= -0.2833+0.2827i
Max Gain is 10.3dB
Γ
•
at Z = 15.641+24.03i
= -0.3434+0.4918i
Ω
Γ
Max PAE is 61.5%
at Z = 10.956+24.122i
•
Ω
= -0.4184+0.5613i
Γ
60.7
48.7
9.81
50.7
52.7
9.31
38.1
8.81
37.9
37.7
Power
Gain
PAE
Zo = 50
3dB Compression Referenced to Peak Gain
Ω
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 5 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 17 for load pull reference planes where the performance was measured.
5GHz, Load-pull
Zs(1fo) = 24.62-23.64i
Zs(2fo) = 51.59+26.01i
Ω
Max Power is 38.3dBm
at Z = 22.515+10.159i
•
Ω
Ω
= -0.3525+0.1895i
Max Gain is 10.3dB
Γ
•
at Z = 14.48+19.192i
= -0.4247+0.424i
Ω
Γ
Max PAE is 59.6%
at Z = 9.755+15.964i
•
Ω
= -0.562+0.4173i
Γ
10.3
57.8
47.8
49.8
51.8
9.75
9.25
38.3
38.1
37.9
Power
Gain
PAE
Zo = 50
3dB Compression Referenced to Peak Gain
Ω
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 6 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 17 for load pull reference planes where the performance was measured.
5.5GHz, Load-pull
Zs(1fo) = 26.09-30.79i
Zs(2fo) = 53.69+46.74i
Ω
Max Power is 38.2dBm
at Z = 17.137+7.844i
•
Ω
Ω
= -0.4694+0.1717i
Max Gain is 10.7dB
Γ
•
at Z = 9.368+12.204i
= -0.6161+0.3322i
Ω
Ω
Γ
Max PAE is 59%
at Z = 9.368+12.204i
•
= -0.6161+0.3322i
Γ
52.9
10.6
56.9
54.9
34.9
10.1
9.58
38.1
37.9
37.7
Power
Gain
PAE
Zo = 50
3dB Compression Referenced to Peak Gain
Ω
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 7 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Typical Measured Performance – Load-Pull Drive-up1, 2
Notes:
1. Pulsed signal with 100uS pulse width and 20% duty cycle
2. See page 17 for load pull and source pull reference planes.
Gain and PAE vs. Output Power
4 GHz - Power Tuned
Gain and PAE vs. Output Power
4 GHz - Efficiency Tuned
16
15
14
13
12
11
10
9
60
55
50
45
40
35
30
25
20
15
10
16
15
14
13
12
11
10
9
70
65
60
55
50
45
40
35
30
25
20
Gain
PAE
Gain
PAE
Zs(1fo) = 23.25-20.34iΩ
Zs(2fo) = 21.61+5.89iΩ
Zl(1fo) = 17.15+29.14iΩ
Zs(1fo) = 23.25-20.34i
Zs(2fo) = 21.61+5.89i
Zl(1fo) = 24.34+16.4i
Ω
Ω
Ω
8
8
7
7
6
6
27 28 29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
Gain and PAE vs. Output Power
4.4 GHz - Power Tuned
Gain and PAE vs. Output Power
4.4 GHz - Efficiency Tuned
16
60
55
50
45
40
35
30
25
20
15
10
16
70
65
60
55
50
45
40
35
30
25
20
15
14
13
12
15
14
13
12
11
10
9
Zs(1fo) = 24-22.43iΩ
11 Zs(2fo) = 42.06-1.87i
Zl(1fo) = 24.31+16.37iΩ
Zs(1fo) = 24-22.43iΩ
Zs(2fo) = 42.06-1.87iΩ
Zl(1fo) = 10.96+24.12iΩ
Ω
10
9
Gain
PAE
8
8
Gain
PAE
7
7
6
6
27 28 29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 8 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Typical Measured Performance – Load-Pull Drive-up1, 2
Notes:
1. Pulsed signal with 100uS pulse width and 20% duty cycle
2. See page 17 for load pull and source pull reference planes.
Gain and PAE vs. Output Power
5 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
5 GHz - Power Tuned
16
15
14
13
12
11
10
9
70
65
60
55
50
45
40
35
30
25
20
16
15
14
13
12
11
10
9
60
55
50
45
40
35
30
25
20
15
10
Gain
PAE
Gain
PAE
Zs(1fo) = 24.62-23.64iΩ
Zs(2fo) = 51.59+26.01iΩ
Zl(1fo) = 9.76+15.96iΩ
Zs(1fo) = 24.62-23.64iΩ
Zs(2fo) = 51.59+26.01iΩ
Zl(1fo) = 22.52+10.16iΩ
8
8
7
7
6
6
27 28 29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
Gain and PAE vs. Output Power
5.5 GHz - Power Tuned
Gain and PAE vs. Output Power
5.5 GHz - Efficiency Tuned
16
60
55
50
45
40
35
30
25
20
15
10
16
70
65
60
55
50
45
40
35
30
25
20
15
14
13
12
11
10
9
15
14
13
12
11
10
9
Zs(1fo) = 26.09-30.79i
Zs(2fo) = 53.69+46.74i
Zl(1fo) = 9.37+12.2i
Ω
Zs(1fo) = 26.09-30.79i
Zs(2fo) = 53.69+46.74i
Zl(1fo) = 17.14+7.84i
Ω
Ω
Ω
Ω
Ω
Gain
PAE
8
8
Gain
PAE
7
7
6
6
27 28 29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 9 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Power Driveup Performance Over Temperatures Of 5.3 – 5.9 GHz EVB1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 20 uS Pulse Width, 20% Duty Cycle
2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network.
Drain Efficiency @ 3dB Over Temperatures
P3dB Over Temperatures
100
90
80
70
60
50
40
30
20
10
0
10
9
8
7
6
5
4
3
2
1
0
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
5.3
5.4
5.5
5.6
5.7
5.8
5.9
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency [GHz]
Frequency [GHz]
G3dB Over Temperatures
PDISS3dB Over Temperatures
15
14
13
12
11
10
9
10
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
-40°C
25°C
85°C
-20°C
45°C
0°C
9
8
7
6
5
4
3
2
1
0
65°C
8
7
6
5
5.3
5.4
5.5
5.6
5.7
5.8
5.9
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency [GHz]
Frequency [GHz]
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 10 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Power Driveup Performance At 25°C Of 5.3 – 5.9 GHz EVB1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 20 uS Pulse Width, 20% Duty Cycle
2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network..
P3dB and G3dB at 25°C
3dB Drain Efficiency at 25°C
15
14
13
12
11
10
9
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
100
90
80
70
60
50
40
30
20
10
0
8
P3dB
G3dB
7
6
5
5.3
5.4
5.5
5.6
5.7
5.8
5.9
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency [GHz]
Frequency [GHz]
PDISS3dB Over at 25°C
10
9
8
7
6
5
4
3
2
1
0
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency [GHz]
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 11 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Power Driveup Performance At 25°C Of 4 – 6 GHz EVB1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network..
P3dB and G3dB at 25°C
3dB Drain Efficiency at 25°C
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
15
14
13
12
11
10
9
100
90
80
70
60
50
40
30
20
10
0
8
P3dB
G3dB
7
6
5
4
4.2
4.4
4.6
4.8
Frequency [GHz]
5
5.2
5.4
5.6
5.8
6
4
4.2
4.4
4.6
4.8
Frequency [GHz]
5
5.2
5.4
5.6
5.8
6
PDISS3dB at 25°C
10
9
8
7
6
5
4
3
2
1
0
4
4.2
4.4
4.6
4.8
5
5.2
5.4
5.6
5.8
6
Frequency [GHz]
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 12 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Thermal and Reliability Information – Pulsed1, 2
Maximum Channel Temperature
QFN base fixed at 85 oC, Pdiss = 7.6 W
260
250
240
230
220
210
200
190
180
170
160
150
140
130
120
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
Pulse Width (sec)
Parameter
Conditions
Values Units
Thermal Resistance, FEA (θJC)
15.0
199
°C/W
°C
Peak Channel Temperature, FEA (TCH)
Median Lifetime, FEA (TM)2
85 °C Case
7.6 W Pdiss, 100 uS PW, 5% DC
1.7E7
160
Hrs
°C
Peak Channel Temperature, IR
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime, FEA (TM)2
15.4
202
°C/W
°C
85 °C Case
7.6 W Pdiss, 100 uS PW, 10% DC
1.3E7
162
Hrs
°C
Peak Channel Temperature, IR
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime, FEA (TM)2
16.1
207
°C/W
°C
85 °C Case
7.6 W Pdiss, 100 uS PW, 20% DC
8.4E6
165
Hrs
°C
Peak Channel Temperature, IR
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime, FEA (TM)2
18.0
222
°C/W
°C
85 °C Case
7.6 W Pdiss, 100 uS PW, 50% DC
2.3E6
173
Hrs
°C
Peak Channel Temperature, IR
Note:
1. FEA: Finite Element Analysis Method, IR: Infra-Red Method
2. Median Lifetime under pulsed condition is that under CW condition divided by duty cycle.
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
- 13 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Thermal and Reliability Information – CW1
Peak Temperature vs. CW Power - QFN base = 85C
260
250
240
230
220
210
200
190
180
170
160
150
140
130
120
110
100
90
80
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
CW Power Dissipation, W
Parameter
Conditions
Values Units
Thermal Resistance, FEA (θJC)
17.9
130
°C/W
°C
Peak Channel Temperature, FEA (TCH)
Median Lifetime, FEA (TM)2
85 °C Case
2.52 W Pdiss
2.7E10
116
Hrs
°C
Peak Channel Temperature, IR
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime, FEA (TM)2
18.8
156
°C/W
°C
85 °C Case
3.78 W Pdiss
1.3E9
133
Hrs
°C
Peak Channel Temperature, IR
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime, FEA (TM)2
19.8
185
°C/W
°C
85 °C Case
5.04 W Pdiss
6.5E7
152
Hrs
°C
Peak Channel Temperature, IR
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime, FEA (TM)2
21.1
218
°C/W
°C
85 °C Case
6.30 W Pdiss
3.3E6
171
Hrs
°C
Peak Channel Temperature, IR
Note:
1. FEA: Finite Element Analysis Method, IR: Infra-Red Method
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
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TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Median Lifetime1
Notes:
1. Test Conditions: VD = +32ꢀV; Failure Criteria = 10ꢀ% reduction in ID_MAX during DC Life Testing
.
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
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TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Maximum Gate Current
Maximum Gate Current Vs. Channel Temperature
10
9
8
7
6
5
4
3
2
1
0
120 130 140 150 160 170 180 190 200 210 220 230
Channel Temperature [°C]
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
www.qorvo.com
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TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Pin Configuration and Description1
Note 1: The TGF3020-SM will be marked with the “TGF3020” designator and a lot code marked below the part designator.
The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the
assembly lot start, the MXXX” is the production lot number.
Pin
2, 3
Symbol
RF IN / VG
RF OUT / VD
Description
Gate
10, 11
Drain
1, 4, 5, 6, 7, 8, 9, 12, 13,
14, 15, 16
NC
No Connection1
Source
Source / Ground / Backside of part
Note 1: Grounding pin 6 will cause performance degradation.
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
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TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Mechanical Drawing1
Note 1:
Unless otherwise noted, all dimention tolerances are +/-0.127 mm.
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum
260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
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TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
5.3 – 5.9 GHz Application Circuit - Schematic
Bias-up Procedure
1. Set VG to -3.5 V.
Bias-down Procedure
1. Turn off RF signal.
2. Set ID current limit to 30 mA.
3. Apply 32 V VD.
2. Turn off VD
3. Wait 2 seconds to allow drain capacitor to discharge.
4. Turn off VG
4. Slowly adjust VG until ID is set to 25 mA.
5. Set ID current limit to 0.3 A (Pulsed operation.)
6. Apply RF.
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
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TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
3.1 – 3.5 GHz Application Circuit - Layout
Board material is RO4350B 0.020” thickness with 1oz copper cladding. Overall EVB size is 2” x 2.5”.
3.1 – 3.5 GHz Application Circuit - Bill of Materials
Reference Design
R1
Value
Qty Manufacturer
1
Part Number
Generic 0603
10
R2
1
Generic 0603
C1, C5
C2
0.2 pF
0.3 pF
5.1 pF
3.3 pF
220 uF
10 uF
1 uF
2
1
2
3
1
1
1
1
1
PPI
PPI
0603N0R2AW251X
0603N0R3AW251X
0603N5R1AW251X
0603N3R3AW251X
EMVY500ADA221MJA0G
C1632X5R0J106M130AC
18121C105KAT2A
0603CS-3N9X_E
C3, C4
C6, C7, C8
C11
PPI
PPI
United Chemicon
TDK
C9
C10
AVX
L1
3.9nH
2.2nH
CoilCraft
CoilCraft
L2
0603CS-2N2X_E
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
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TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
4 – 6 GHz Application Circuit - Schematic
Bias-up Procedure
2. Set VG to -4 V.
Bias-down Procedure
3. Turn off RF signal.
4. Set ID current limit to 30 mA.
5. Apply 32 V VD.
4. Turn off VD
5. Wait 2 seconds to allow drain capacitor to discharge.
7. Turn off VG
6. Slowly adjust VG until ID is set to 25 mA.
8. Set ID current limit to 0.3 A (Pulsed operation.)
9. Apply RF.
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
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- 21 of 24 -
TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
4 – 6 GHz Application Circuit - Layout
Board material is RO4350B 0.020” thickness with 1oz copper cladding. Overall EVB size is 2” x 2.5”.
4 – 6 GHz Application Circuit - Bill of Materials
Reference Design
R1
Value
Qty
1
Manufacturer
Part Number
Generic 0603
10
R2
1
Generic 0603
C1
0.2 pF
0.3 pF
5.1 pF
10 pF
3.3 pF
220 uF
10 uF
1 uF
1
PPI
PPI
0603N0R2AW251X
0603N0R3AW251X
0603N5R1AW251X
0603N100AW251X
0603N3R3AW251X
EMVY500ADA221MJA0G
C1632X5R0J106M130AC
18121C105KAT2A
0603CS-3N9X_E
C2
1
C3
1
PPI
C4
1
PPI
C6, C7, C8
C11
C9
3
PPI
1
United Chemicon
TDK
1
C10
L1
1
AVX
3.9nH
1.8nH
1
CoilCraft
CoilCraft
L2
1
0603CS-1N8X_E
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
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TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Recommended Solder Temperature Profile
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
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TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
Class 1B
ESDAꢁ/ꢁJEDEC JS-001-2012
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) Class C3
JEDEC JESD22-C101F
MSLꢀ–ꢀMoisture Sensitivity Level
3 @ 260°C IPC/JEDEC J-STD-020
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: NiPdAu
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
•
Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
Qorvo:
Web: www.Qorvo.com
Email: info-sales@qorvo.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Datasheet Rev. B, October 24, 2017 | Subject to change without notice
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