H11A817C [QT]
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS; 4引脚光电晶体管光耦合器
| 型号： | H11A817C |
| 厂家： | 
QT OPTOELECTRONICS |
| 描述： | 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
| 文件： | 总4页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4 –P IN P HOTOTRANS IS TOR OP TOCOUP LERS
H1 1 AA8 1 4 S ERIES
H1 1 A8 1 7 S ERIES
PACKAGE DIMENS IONS
DES CRIP TION
The QT Optoelectronics H11AA814 Series consists
of two gallium arsenide infrared emitting diodes, con-
nected in inverse parallel, driving a single silicon
phototransistor in a 4-pin dual in-line package.
.012 (.30)
.007 (.20)
.055 (1.40)
.047 (1.20)
4
3
The H11A817 Series consists of a gallium arsenide
infrared emitting diode driving a silicon phototransis-
tor in a 4-pin dual in-line package.
.380
(9.64)
MAX
.327
(8.30)
MAX
.300
(7.62)
MIN
.270 (6.86)
.248 (6.30)
1
2
FEATURES
.187 (4.75)
.175 (4.45)
0
to 15°
■ Compact 4-pin package
■ Current transfer ratio in selected groups:
.158 (4.01)
.144 (3.68)
.200
(5.10)
MAX
H11AA814: 20-300%
H11A817:
50-600%
H11AA814A: 50-150%
H11A817A: 80-160%
H11A817B: 130-260%
H11A817C: 200-400%
H11A817D: 300-600%
.020 (.51) MIN
.154 (3.90)
.120 (3.05)
.022 (.56)
.015 (.40)
.100 (2.54) TYP
AP P LICATIONS
1
2
4
3
1
2
4
3
COLLECTOR
ANODE
COLLECTOR
EMITTER
H11AA814 Series
■ AC line monitor
EMITTER
CATHODE
■ Unknown polarity DC sensor
■ Telephone line interface
Equivalent Circuit (H11AA814)
Equivalent Circuit (H11A817)
H11A817 Series
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Industrial controls
NOTE: ALL DIMENSIONS ARE IN INCHES (mm)
PACKAGE CODE T
ABS OLUTE MAXIMUM RATING
TOTAL PACKAGE
OUTP UT TRANS IS TOR
Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C
Operating temperature . . . . . . . . . . . . . . . -55° to 100° C
Lead solder temperature . . . . . . . . . . . 260° C for 10 sec
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . 200 mW
Power dissipation (25° C ambient) . . . . .150 mW
Derate linearly (above 25° C) . . . . . .2.0 mW/° C
VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Continuous collector current . . . . . . . . . . 50 mA
INP UT DIODE
Power dissipation (25° C ambient) . . . . . . . . . . . .70 mW
Derate linearly (above 25° C) . . . . . . . . . . . .1.33 mW/° C
Continuous forward current . . . . . . . . . . . . . . . . . . 50 mA
Peak forward current (1 µs pulse, 300 pps) . . . . . . . . .1 A
Reverse voltage (H11A817) . . . . . . . . . . . . . . . . . . . . 5 V
4 –P IN P HOTOTRANS IS TOR OP TOCOUP LERS
ELECTRO-OP TICAL CHARACTERIS TICS (T
A
= 25° C Unless otherwise specified)
INDIVIDUAL COMP ONENT CHARACTERIS TICS (Applies to all unless indicated otherwise)
PARAMETER
INP UT DIODE
Forward voltage
H11A817
S YMBOL
MIN
TYP
MAX
UNITS
TES T CONDITIONS
VF
VF
1.2
1.2
1.5
1.5
V
V
IF = 20 mA
H11AA814
IF = ±20 mA
Reverse current
H11A817
IR
.001
10
µA
VR = 5 V
OUTP UT TRANS IS TOR
Breakdown voltage
Collector to emitter
Emitter to collector
Collector dark current
Capacitance
BVCEO
BVECO
ICEO
35
6
100
10
V
IC = 1 mA, IF = 0
V
IE = 100 µA, IF = 0
VCE = 10 V, IF = 0
VCE = 0 V, f = 1 MHz
.025
8
100
nA
pF
CCE
TRANS FER CHARACTERIS TICS
CHARACTERIS TIC
DC current transfer ratio
H11AA814
S YMBOL
MIN
TYP
MAX
UNITS
TES T CONDITIONS
CTR
CTR
CTR
CTR
CTR
CTR
CTR
VCE (SAT)
tr
20
50
300
150
600
160
260
400
600
0.2
%
%
%
%
%
%
%
V
IF = ±1 mA,VCE = 5V
IF = ±1 mA,VCE = 5V
IF = 5 mA,VCE = 5V
H11AA814A
H11A817
50
H11A817A
80
H11A817B
130
200
300
H11A817C
H11A817D
Saturation Voltage
Rise time (non saturated)
0.1
2.4
IF = (±)20 mA, IC = 1 mA
18
µs
IC = 2 mA, VCE = 2 V,
RL = 100 Ω
Fall time (non saturated)
tf
2.4
TYP
0.5
18
µs
IC = 2 mA, VCE = 2 V,
RL = 100 Ω
IS OLATION CHARACTERIS TICS
CHARACTERIS TIC
S YMBOL
MIN
5300
1011
MAX
UNITS
VRMS
Ω
TES T CONDITIONS
1 Minute
Steady-state isolation voltage VISO
Isolation resistance
Isolation capacitance
RISO
CISO
VI-O = 500 VDC
VI-O = Ø, f = 1 MHz
pF
4 –P IN P HOTOTRANS IS TOR OP TOCOUP LERS
TYP ICAL CHARACTERIS TICS
1.2
1.4
1.2
1
IF = 10 mA
1
IF = 5 mA
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0
5
10
15
20
25
30
-50
-25
0
+25
+50
+75
+100
FORWARD CURRENT – IF (mA)
AMBIENT TEMPERATURE (° C)
FIG. 1 - Normalized CTR vs. Forward Current
FIG. 2 - Normalized CTR vs. Ambient Temperature
.14
IF = 20 mA
1.7
1.5
1.3
IC = 1 mA
.12
.1
.08
.06
.04
.02
0
T = -55° C
1.1
T = -25° C
0.9
T = 100° C
0.7
0.5
-50
-25
0
25
50
75
100
125
0.1
0.2
0.5
FORWARD CURRENT – IF (mA)
FIG. 4 - Forward Voltage vs. Forward Current
1.0
2.0
5
10
20
50
100
AMBIENT TEMPERATURE (° C)
FIG. 3 - V (SAT) vs. Ambient Temperature
CE
4 –P IN P HOTOTRANS IS TOR OP TOCOUP LERS
TYP ICAL CHARACTERIS TICS
10
25
20
VCE = 10 V
1
IF = 20 mA
10-1
15
10-2
10-3
10-4
IF = 10 mA
10
5
IF = 5 mA
10-5
10-6
IF = 1 mA
9
0
0
1
2
3
4
5
6
7
8
10
0
25
50
75
100
125
COLLECTOR–EMITTER VOLTAGE VCE (V)
AMBIENT TEMPERATURE (° C)
FIG. 5 - Collector Current vs. Collector-Emitter Voltage
FIG. 6 - Collector Leakage Current vs. Ambient Temperature
1000
100
IF = 5 mA
CC = 5 V
T = 25° C
V
a
T
off
T
f
10
T
on
1
T
r
0.1
0.1
1
10
100
R-LOAD RESISTOR (k Ω)
FIG. 7 - Switching Speed vs. Load Resistor (TYP)
Ca ll QT Op t o e le c t ro n ic s fo r m o re in fo rm a t io n o r t h e p h o n e n u m b e r o f yo u r n e a re s t d is t rib u t o r.
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■
■
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United States 800-533-6786 France 33 01/43.99.25.12 Germany 49 089/96.30.51 United Kingdom 44 [0] 1296/39.44.99 Asia/Pacific 603/735-2417
© 1996 QT Optoelectronics
QT-012-A
DS 104
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