H11D4.3S [QT]

Transistor Output Optocoupler, 1-Element, 5300V Isolation,;


型号：	H11D4.3S
厂家：	QT OPTOELECTRONICS
描述：	Transistor Output Optocoupler, 1-Element, 5300V Isolation, 输出元件光电
文件：	总6页 (文件大小：90K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1

H11D2

H11D3

H11D4

4N38

DESCRIPTION

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting

diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

FEATURES

• High Voltage

- H11D1, H11D2, BV_CER= 300 V

- H11D3, H11D4, BV_CER= 200 V

• High isolation voltage

- 5300 VAC RMS - 1 minute

- 7500 VAC PEAK - 1 minute

• Underwriters Laboratory (UL) recognized File# E90700

ANODE

CATHODE

N/C

BASE

COLLECTOR

EMITTER

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Units

TOTAL DEVICE

T_STG

-55 to +150

°C

Storage Temperature

Operating Temperature

Lead Solder Temperature

Total Device Power Dissipation @ T_A= 25°C

Derate above 25°C

T_OPR

T_SOL

-55 to +100

260 for 10 sec

260

°C

P_D

I_F

3.5

mW/°C

EMITTER

*Forward DC Current

*Reverse Input Voltage

*Forward Current - Peak (1µs pulse, 300pps)

*LED Power Dissipation @ T_A= 25°C

Derate above 25°C

V_R

6.0

3.0

I_F(pk)

150

1.41

mW/°C

P_D

8/9/00

200046A

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

ABSOLUTE MAXIMUM RATINGS (Cont.)

Parameter

Symbol

Value

Units

DETECTOR

300

*Power Dissipation @ T_A= 25°C

Derate linearly above 25°C

P_D

4.0

300

200

mW/°C

H11D1 - H11D2

H11D3 - H11D4

4N38

*Collector to Emitter Voltage

*Collector Base Voltage

V_CER

H11D1 - H11D2

H11D3 - H11D4

4N38

300

200

V_CBO

H11D1 - H11D2

H11D3 - H11D4

*Emitter to Collector Voltage

Collector Current (Continuous)

V_ECO

100

ELECTRICAL CHARACTERISTICS (T = 25 Unless otherwise specified.)

°C

INDIVIDUAL COMPONENT CHARACTERISTICS

Characteristic

EMITTER

Test Conditions Symbol

Device

Min

Typ**

Max

Unit

(I_F= 10 mA)

V_F

ALL

1.15

1.5

*Forward Voltage

Forward Voltage Temp.

Coefficient

!VF

!TA

BV_R

ALL

-1.8

mV/°C

Reverse Breakdown Voltage

(I_R= 10 µA)

(V_F= 0 V, f = 1 MHz)

(V_F= 1 V, f = 1 MHz)

(V_R= 6 V)

ALL

µA

Junction Capacitance

C_J

I_R

ALL

*Reverse Leakage Current

DETECTOR

ALL

0.05

(R_BE= 1 M")

H11D1/2

H11D3/4

4N38

300

200

BV_CER

BV_CEO

*Breakdown Voltage

Collector to Emitter

(I_C= 1.0 mA, I_F= 0)

(No R_BE) (I_C= 1.0 mA)

H11D1/2

H11D3/4

4N38

300

200

*Collector to Base

(I_C= 100 µA, I_F= 0)

BV_CBO

Emitter to Base

BV_EBO

BV_ECO

4N38

(I_E= 100 µA , I_F= 0)

Emitter to Collector

ALL

(V_CE= 200 V, I_F= 0, T_A= 25°C)

(V_CE= 200 V, I_F= 0, T_A= 100°C)

(V_CE= 100 V, I_F= 0, T_A= 25°C)

(V_CE= 100 V, I_F= 0, T_A= 100°C)

100

250

100

250

µA

H11D1/2

*Leakage Current

Collector to Emitter

(R_BE= 1 M")

I_CER

H11D3/4

4N38

(No R_BE) (V_CE= 60 V, I_F= 0, T_A= 25°C)

I_CEO

Notes

* Parameters meet or exceed JEDEC registered data (for 4N38 only)

** All typical values at T_A= 25°C

8/9/00

200046A

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

TRANSFER CHARACTERISTICS

DC Characteristic

Test Conditions Symbol

Device

H11D1

H11D2

H11D3

H11D4

4N38

Min

Typ**

Max

Unit

EMITTER

(I_F= 10 mA, V_CE= 10 V)

2 (20)

Current Transfer Ratio

Collector to Emitter

(R_BE= 1 M")

CTR

mA (%)

1 (10)

2 (20)

(I_F= 10 mA, V_CE= 10 V)

(I_F= 10 mA, I_C= 0.5 mA)

H11D1/2/3/4

4N38

0.1

0.40

1.0

*Saturation Voltage

(R_BE= 1 M") V_{CE (SAT)}

(I_F= 20 mA, I_C= 4 mA)

TRANSFER CHARACTERISTICS

Characteristic

Test Conditions Symbol Device

Min

Typ**

Max

Unit

SWITCHING TIMES

(V_CE=10 V, I_CE= 2 mA)

(R_L= 100 ")

t_on

t_off

ALL

Non-Saturated Turn-on Time

Turn-off Time

µs

ISOLATION CHARACTERISTICS

Characteristic

Test Conditions Symbol Device

Min

5300

7500

10¹¹

Typ**

Max

Unit

(V_ACRMS)

(V_ACPEAK)

Isolation Voltage

(I_I-O#$1 µA, 1 min.)

V_ISO

ALL

Isolation Resistance

Isolation Capacitance

(V_I-O= 500 VDC)

(f = 1 MHz)

R_ISO

C_ISO

ALL

0.5

Notes

* Parameters meet or exceed JEDEC registered data (for 4N38 only)

** All typical values at T_A= 25°C

Fig.1 LED Forward Voltage vs. Forward Current

Fig.2 Normalized Output Characteristics

1.8

Normalized to:

= 10 V

= 10 mA

= 10 Ω

1.7

= 25˚C

1.6

= 50 mA

= 10 mA

1.5

1.4

= 55˚C

= 25˚C

= 5 mA

1.3

1.2

1.1

1.0

0.1

0.01

= 100˚C

0.1

100

- LED FORWARDCURRENT (mA)

- COLLECTOR VOLTAGE (V)

8/9/00

200046A

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

Fig.3 Normalized Output Current vs. LED Input Current

Fig.4 Normalized Output Current vs.Temperature

Normalized to:

= 10 V

= 10 mA

= 10 Ω

= 10 mA

= 10 Ω

= 20 mA

= 10 mA

= 25˚C

= 5 mA

0.1

0.01

0.1

-60

-40

-20

100

- LED INPUT CURRENT (mA)

T - AMBIENT TEMPERATURE (˚C)

Fig.5 Normalized Dark Current vs. Ambient Temperature

Normalized Collector-Base Current vs.Temperature

Normalized to:

= 100 V

= 10 V

10000

1000

100

= 10

Ω

= 10 mA

= 25˚C

= 10

Ω

= 50 mA

= 25˚C

= 300 V

= 100 V

= 50 V

= 10 mA

= 5 mA

-40

0.1

100

110

-60

-20

100

- AMBIENT TEMPERATURE (˚C)

8/9/00

200046A

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

Package Dimensions (Through Hole)

Package Dimensions (Surface Mount)

0.350 (8.89)

0.330 (8.38)

PIN 1

ID.

PIN 1

ID.

0.270 (6.86)

0.240 (6.10)

0.270 (6.86)

0.240 (6.10)

0.350 (8.89)

0.330 (8.38)

0.070 (1.78)

0.045 (1.14)

0.300 (7.62)

TYP

0.070 (1.78)

0.045 (1.14)

0.200 (5.08)

0.135 (3.43)

0.200 (5.08)

0.165 (4.18)

0.016 (0.41)

0.008 (0.20)

0.020 (0.51)

MIN

0.154 (3.90)

0.100 (2.54)

0.020 (0.51)

MIN

0.016 (0.40) MIN

0.016 (0.40)

0.008 (0.20)

0.022 (0.56)

0.016 (0.41)

0.100 (2.54)

TYP

0.315 (8.00)

MIN

0.300 (7.62)

TYP

0.022 (0.56)

0.016 (0.41)

0° to 15°

0.405 (10.30)

MAX

0.100 (2.54)

TYP

Lead Coplanarity : 0.004 (0.10) MAX

Package Dimensions (0.4”Lead Spacing)

Recommended Pad Layout for

Surface Mount Leadform

PIN 1

ID.

0.270 (6.86)

0.240 (6.10)

0.070 (1.78)

0.060 (1.52)

0.350 (8.89)

0.330 (8.38)

0.415 (10.54)

0.100 (2.54)

0.070 (1.78)

0.045 (1.14)

0.295 (7.49)

0.030 (0.76)

0.004 (0.10)

MIN

0.200 (5.08)

0.135 (3.43)

0.154 (3.90)

0.100 (2.54)

0.016 (0.40)

0.008 (0.20)

0° to 15°

0.022 (0.56)

0.016 (0.41)

0.400 (10.16)

TYP

0.100 (2.54) TYP

NOTE

All dimensions are in inches (millimeters)

Call QT Optoelectronics for more information or the phone number of your nearest distributor.

United States 800-533-6786 • France 33 [0] 1.45.18.78.78 • Germany 49 [0] 89/96.30.51 • United Kingdom 44 [0] 1296 394499 • Asia/Pacific 603-7248193

www.qtopto.com

8/9/00

200046A

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

ORDERING INFORMATION

Order Entry Identifier

Option

Description

Surface Mount Lead Bend

Surface Mount; Tape and reel

0.4” Lead Spacing

.SD

300

300W

.300

.300W

.3S

VDE 0884

VDE 0884, 0.4” Lead Spacing

VDE 0884, Surface Mount

VDE 0884, Surface Mount, Tape & Reel

3SD

.3SD

QT Carrier Tape Specifications (“D” Taping Orientation)

12.0 ± 0.1

4.0 ± 0.1

4.85 ± 0.20

Ø1.55 ± 0.05

0.30 ± 0.05

4.0 ± 0.1

1.75 ± 0.10

7.5 ± 0.1

16.0 ± 0.3

13.2 ± 0.2

9.55 ± 0.20

Ø1.6 ± 0.1

10.30 ± 0.20

User Direction of Feed

0.1 MAX

NOTE

All dimensions are in millimeters

Call QT Optoelectronics for more information or the phone number of your nearest distributor.

United States 800-533-6786 • France 33 [0] 1.45.18.78.78 • Germany 49 [0] 89/96.30.51 • United Kingdom 44 [0] 1296 394499 • Asia/Pacific 603-7248793

www.qtopto.com

8/9/00

200046A

H11D4.3S [QT]

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