2N1131J [RAYTHEON]

Medium Current General Purpose Amplifiers and Switches; 中等电流通用放大器和开关
2N1131J
元器件型号: 2N1131J
生产厂家: RAYTHEON COMPANY    RAYTHEON COMPANY
描述和应用:

Medium Current General Purpose Amplifiers and Switches
中等电流通用放大器和开关

晶体 开关 放大器 晶体管
PDF文件: 总12页 (文件大小:768K)
下载文档:  下载PDF数据表文档文件
型号参数:2N1131J参数

2N1131L

LOW POWER PNP SILICON TRANSISTOR

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14 MICROSEMI

2N1131L

Bipolar PNP Device in a Hermetically sealed TO5

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6 SEME-LAB

2N1131L

LOW POWER PNP SILICONTRANSISTOR

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6 MICROSEMI

2N1132

SILICON PLANAR PNP TRANSISTOR

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20 SEME-LAB

2N1132

LOW POWER PNP SILICONTRANSISTOR

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33 MICROSEMI

2N1132

SI PNP LO-PWR BJT

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6 NJSEMI

2N1132

LOW POWER PNP SILICON TRANSISTOR

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152 MICROSEMI

2N1132

Medium Current General Purpose Amplifiers and Switches

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72 RAYTHEON

2N1132A

Medium Current General Purpose Amplifiers and Switches

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131 RAYTHEON

2N1132A

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-39

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183 ETC

2N1132A

Transistor

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2 ASI

2N1132B

Small Signal Transistors

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18 ETC

2N1132B

Small Signal Transistors

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36 ETC

2N1132B

Transistor

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0 ASI

2N1132B

Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

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0 CENTRAL