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元器件品牌
2N1131J
[RAYTHEON]
Medium Current General Purpose Amplifiers and Switches; 中等电流通用放大器和开关
元器件型号:
2N1131J
生产厂家:
RAYTHEON COMPANY
描述和应用:
Medium Current General Purpose Amplifiers and Switches
中等电流通用放大器和开关
晶体 开关 放大器 晶体管
PDF文件:
总12页 (文件大小:768K)
下载文档:
下载PDF数据表文档文件
型号参数:2N1131J参数
查看货源
2N1131L
LOW POWER PNP SILICON TRANSISTOR
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156
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14
MICROSEMI
2N1131L
Bipolar PNP Device in a Hermetically sealed TO5
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156
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6
SEME-LAB
2N1131L
LOW POWER PNP SILICONTRANSISTOR
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156
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6
MICROSEMI
2N1132
SILICON PLANAR PNP TRANSISTOR
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156
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20
SEME-LAB
2N1132
LOW POWER PNP SILICONTRANSISTOR
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156
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33
MICROSEMI
2N1132
SI PNP LO-PWR BJT
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156
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6
NJSEMI
2N1132
LOW POWER PNP SILICON TRANSISTOR
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156
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152
MICROSEMI
2N1132
Medium Current General Purpose Amplifiers and Switches
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72
RAYTHEON
2N1132A
Medium Current General Purpose Amplifiers and Switches
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156
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131
RAYTHEON
2N1132A
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-39
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183
ETC
2N1132A
Transistor
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156
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2
ASI
2N1132B
Small Signal Transistors
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18
ETC
2N1132B
Small Signal Transistors
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36
ETC
2N1132B
Transistor
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156
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0
ASI
2N1132B
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
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0
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