RMPA1951-102 [RAYTHEON]
3V PCS CDMA Power Amplifier Module; 3V PCS CDMA功率放大器模块
| 型号： | RMPA1951-102 |
| 厂家： | 
RAYTHEON COMPANY |
| 描述： | 3V PCS CDMA Power Amplifier Module |
| 文件： | 总17页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication System
(PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective
means to reduce current consumption during peak phone usage at backed-off RF power levels. Analog or digital
bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range
of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and
excellent linearity are achieved using Raytheon’s Heterojunction Bipolar Transistor (HBT) process.
Description
Features
K Advanced DC power-management extends average phone-battery life!
K Single positive-supply operation and power-down mode.
K 35% power-added efficiency at +29 dBm CDMA average output power.
K Compact LCC package: 6.0 x 6.0 x 1.5 mm3.
K 50 ohm matched and DC blocked input/output.
Absolute
Maximum
Ratings1
Parameter
Symbol
Min
Typical
Max
Units
Supply Voltage
Vcc
Vref
Pin
3.5
2.7
+1
6
4.0
+7
V
V
dBm
Reference Voltage
1.5
RF Input Power2
Load VSWR
Case Operating Temperature
Storage Temperature
VSWR
Tc
Tstg
1.2:1
+25
+25
10:1
+110
+150
-40
-55
°C
°C
Electrical
Parameter
Min
Typ
Max Unit
Parameter
Stability (All spurious)5
Harmonics (Po ≤ 29 dBm)
2fo, 3fo, 4fo
Min
Typ
Max Unit
Characteristics3
Operating Frequency
1850
1910 MHz
-70
-30
100
dBc
Gain
(Po=0 dBm)
(Po=28 dBm)
20
25
29
24
27
dB
dB
dBm
dBc
Quiescent Current
(Vref=2.7V)
Linear Output Power
80
50
35
mA
mA
mA
(Vref=2.0V)
(Vref=1.7V)
Power-Added Efficiency
(Po=16 dBm)
(Po=28 dBm)
(Po=29 dBm)
ACPR (Offset ≥ 1.25 MHz)4
Noise Figure
Noise Power (Po ≤ 29 dBm)
Input VSWR (50Ω)
Output VSWR (50Ω)
5
28
31
6.5
32
35
-49
5
%
%
%
Power Shutdown Current6
2
10
4.5
3.2
u
V
V
A
Vcc
Vref
Iref
Case Operating
Temperature
3.0
1.7
3.5
2.7
13
-46
6
dBc
dB
mA
-135 dBm/Hz
2.0:1 2.5:1
3.5:1
-30
+85
°C
Notes:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2. Typical RF input power for CDMA Pout = +28 dBm.
3. All parameters met at Tc =+25°C, Vcc =+3.5V, Vref=+2.7V, f=1880 MHz and load VSWR ≤ 1.2:1.
4. Po ≤ 28 dBm at Vcc=3.5V; CDMA Waveform measured using the ratio of average power within a
1.23 MHz channel to average power within a 30 kHz bandwidth at + 1.25 MHz offset.
5. Load VSWR ≤ 6:1, all phase angles.
6. No applied RF signal. Vcc=+3.5V nominal, Vref=+0.2V maximum.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 1
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Dimensions in inches (mm)
Figure 1
Package Outline and
Pin Designations
Pin # Description
1
2
3
4
5
6
7
Vcc
RF In
VREF
N/C
RF Out
GND
GND
(2.54)
(2.46)
(5.08)
(4.82)
Figure 2
Functional Block
Diagram of
(Topside View)
PA Module
GND
(6)
Packaged Product
VCC
(1)
Collector
Bias
VCC=3.5V (nom)
VREF=2.7V (nom)
1850-1910 MHz
50 Ohms I/O
Interstage
Match
Output
Matching
Network
Input
Matching
Network
Input
Stage
Output
Stage
RF IN
(2)
RF OUT
(5)
MMIC
Input Stage
Bias
Output Stage
Bias
GND (Pin 7)-
(Package Base)
Reference
Adjust
VREF
(3)
N/C
(4)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 2
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Evaluation Board With device marking oriented right side up, RF IN is on the left and RF OUT is on the right.
Instructions
Blue wire is collector DC voltage input (pin 1). VCC= +3.5V nominal.
Brown wire is reference DC voltage input (pin 3). Vref=+ 2.7V nominal to obtain Iccq= 80mA. Operation at lower
or higher quiescent currents can be achieved by decreasing or increasing Vref voltage relative to +2.7V.
First apply +3.5V to the collector supply (blue wire). Next apply +2.7V to the reference supply to brown wire.
Quiescent collector current with no RF applied will be about 80 mA. Reference supply current with or without RF
applied will be about 13 mA. When turning amplifier off, reverse power supply sequence.
Apply -20dBm RF input power at PCS frequency (1850 -1910MHz). After making any initial small signal
measurements at this drive level, input power may be increased up to a maximum of +6dBm for large signal,
single-tone or digital CDMA measurements. Do not exceed +6dBm input power.
Figure 3
Evaluation Board
Layout and Schematic
PCB Specifications:
Material: Rogers RO4003
Dimensions: 2.0”x1.5”x0.032”
Metallization: 1/2 OZ Copper
Cladding
GND
Vcc: +3.5V
Icc: 80mA
BLUE WIRE
G656524
V1
VCC
Ra y th e o n
RMPA1951 - 102
PPYYWWXX
(ALT)PPYYWWZZZ
RF IN
RF OUT
RF OUT
N/C
RF IN
VREF
Vref: +2.7V
Ibb: 13 ma
BROWN WIRE
GND
C1 *
2.2 uF
VCC
GND
50 ohm TRL
1
6
Raytheon
RMPA1951
PPYYWWZZZ
2
3
50 ohm TRL
5
4
SMA2
RF OUT
SMA1
RF IN
N/C
VREF
7
(package base)
* Minimum VCC bypass capacitance recommended for best RF performance.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 3
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Application
Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
K Precautions to Avoid Permanent Device Damage:
– Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain
in their original packaging until component placement to ensure no contamination or damage to RF, DC &
ground contact areas.
– Device Cleaning: Standard board cleaning techniques should not present device problems provided that the
boards are properly dried to remove solvents or water residues.
– Static Sensitivity: Follow ESD precautions to protect against ESD damage:
• A properly grounded static-dissipative surface on which to place devices.
• Static-dissipative floor or mat.
• A properly grounded conductive wrist strap for each person to wear while handling devices.
– General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair
of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply
excessive pressure to the top of the lid.
– Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are
protected and require no special storage conditions. Once the sealed bag has been opened, devices should
be stored in a dry nitrogen environment.
K Device Usage: Raytheon recommends the following procedures prior to assembly.
– Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking
temperature.
– Assemble the dry-baked devices within 7 days of removal from the oven.
– During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity
and a maximum temperature of 30°C
– If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must
be repeated.
K Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand
soldering is not recommended.
– Reflow Profile
• Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to
prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A
typical heating rate is 1- 2°C/sec.
• Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board
and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at
150°C.
• Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to
thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at
temperature can enhance the formation of inter-metallic compounds at the lead/board interface and
may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely
driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering
temperatures should be in the range 215-220°C, with a maximum limit of 225°C.
• Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid
cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below
indicates the recommended soldering profile.
K Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the
heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness.
K Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat
gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than
5 seconds. No more than 2 rework operations should be performed.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 4
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
240
220
Figure 4
Recommended Solder
Reflow Profile
10 Sec
200
183oC
180
160
140
Soak at
45 Sec
(Max)
above
183oC
120
100
80
60
40
20
0
150oC for
60 Sec
1oC/Sec
1oC/Sec
0
60
120
180
240
300
Time (Sec)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 5
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Performance
Data
Single-Tone Output Power, Gain and
Power-Added Efficiency
Figure 5
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
Output Power
Power Gain
Power-Added
Efficiency
Tested at:
K Vcc=3.5V
K Vref=2.7V
K f=1880 MHz
K Tc=+25°C
0.0
-15.0
-12.5
-10.0
-7.5
-5.0
-2.5
0.0
2.5
5.0
7.5
Input P o we r (dBm)
Figure 6
CMDA Gain vs Output Power
30.00
27.50
25.00
22.50
20.00
17.50
15.00
Tc= +25 deg C
Tc= -30 deg C
Tc= +85 deg C
Tested at:
K Vcc=3.5V
K Vref=2.7V
K f=1880 MHz
K Pout < 29 dBm
0.00
5.00
10.00
15.00
20.00
25.00
30.00
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 6
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 7
ACPR vs Frequency (3 Devices)
-47.50
-48.00
-48.50
-49.00
-49.50
-50.00
-50.50
-51.00
-51.50
ACPR1_28_1
ACPR1_28_2
ACPR1_28_3
Tested at:
KVcc=3.5V
KVref=2.7V
KPout=+28 dBm
KOffset= 1.25 MHz
KTc=+25°C
1840
1850
1860
1870
1880
1890
1900
1910
1920
Frequency (MHz)
Figure 8
ACPR vs Output Power and Temperature
-40.00
-45.00
-50.00
-55.00
-60.00
-65.00
-70.00
-75.00
Tc=+25 deg C
Tc=-30 deg C
Tc=+85 deg C
Tested at:
K Vcc=3.5V
K Vref=2.7V
K f=1880 MHz
K Offset= 1.25 MHz
K Pout < 28 dBm
0.00
5.00
10.00
15.00
20.00
25.00
30.00
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 7
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 9
PAE vs Output Power and Temperature
40.00
35.00
30.00
25.00
20.00
15.00
10.00
5.00
Tc= +25 deg C
Tc=-30 deg C
Tc=+85 deg C
Tested at:
K Vcc=3.5V
K Vref=2.7V
K F=1880 MHz
0.00
0.00
5.00
10.00
15.00
20.00
25.00
30.00
Output Power (dBm)
Figure 10
DC Collector Current vs Output Power and Reference Voltage
700
600
500
400
300
200
100
0
Pout=+4 dBm
Pout=+16 dBm
Pout=+24 dBm
Pout=+28 dBm
Pout=+29 dBm
Tested at:
K Vcc=3.5V
K Vref=2.65 –3.05V
K F=1880 MHz
K Tc = +25°C
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
3.05
3.10
Reference Voltage, Vref (V)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 8
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Many Cellular/PCS handsets can benefit from gain control and DC power management to optimize transmitter
performance while operating at backed-off output power levels. Oftentimes, cellular systems will operate at 10-20
dB back-off from maximum-rated linear power and peak power-added efficiency. The ability to reduce current
consumption under these conditions, without sacrificing linearity, is critical to extending battery life in next-
generation handheld phones.
ADVANCED INFORMATION
DC Power
Management
for Reduced-Power
Operating Modes
The RMPA1951-102 PA offers the ability to lower quiescent current by more than 60 percent and small-signal gain
by up to 10 dB using a single control voltage (Vref). Even with the amplifier biased for lowest current consumption,
high linearity is maintained over the full operating temperature range and at output power levels up to +16 dBm.
Bias and gain control through Vref provides complete flexibility for the handset designer, allowing the user to define
the operation by either an analog (continuously-variable) or digital (discrete-step) voltage input. As an example,
reducing the Vref voltage from 2.7V (nominal) to 1.7V (minimum) can lower PA current consumption by more than
20 percent at an output power of +16 dBm.
The following charts demonstrate analog and digital control techniques for minimizing DC power consumption at
reduced RF output power levels. Figures 11 through 19 characterize analog control over a reference voltage (Vref)
range of 1.7V to 2.7V. Quiescent current is reduced to less than 30 mA and small-signal gain is reduced by 10 dB at
Vref=1.7V. Operating current at +16 dBm is also reduced by 20 percent, or 35 mA, at the lowest reference voltage.
Figures 20 through 23 feature digital control using three discrete voltage levels (2.7V, 2.0V, 1.7V) to optimize linear
PA performance over three output power ranges (< +4 dBm, +4 dBm to +16 dBm, >+16 dBm). Alternate output
power ranges can be selected depending on the power-probability use in the cellular system.
DC Power
Management
Application of Digital
Control Technique
Parameter
Symbol
Min
Typical
Max
Units
Conditions
Low-Power Range
Current
P04
Icc4
+4
55
dBm
mA
dB
Vref=1.7V typ
Gain
Linearity
G4
12.5
-50
ACPR4
dBc
Mid-Power Range
Current
P16
Icc16
G16
+4
+10
+16
160
dBm
mA
dB
Vref=2.0V typ
Gain
20
-50
Linearity
ACPR16
dBc
High-Power Range
Current
P28
Icc28
G28
+16
+28
640
dBm
mA
dB
Vref=2.7V typ
Pout=+28 dBm
560
26
-50
Gain
Linearity
ACPR28
dBc
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
Revised August 27, 2001
362 Lowell Street
Andover, MA 01810
Page 9
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 11
Enhanced PAE vs Reference Voltage at Pout=+16 dBm (Analog Control)
9.0
PAE (+16 dBm)
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
Vref (V)
Figure 12
Total Quiescent Current vs Reference Voltage (Analog Control)
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
Iccq+Iref
Tested at:
K Vcc=3.5V
K Tc = +25°C
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
Vref (V)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 10
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 13
Small-Signal Gain (Pout=0 dBm) vs Reference Voltage (Analog Control)
27.5
SS gain
25.0
Tested at:
K Vcc=3.5V
22.5
K F=1880 MHz
K Tc = +25°C
20.0
17.5
15.0
12.5
10.0
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
Vref (V)
Figure 14
Total Current (ICC + Iref) vs Output Power and Reference Voltage
(Analog Control)
185.0
175.0
165.0
155.0
145.0
135.0
125.0
115.0
105.0
95.0
Vref=2.0V
Vref=1.9V
Vref=1.8V
Vref=1.7V
Vref=2.7V
Tested at:
KVcc=3.5V
KF=1880 MHz
KTc = +25°C
85.0
75.0
65.0
55.0
45.0
35.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 11
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 15
Gain at +25°C vs Output Power and Reference Voltage
(Analog Control)
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
Vref=2.0V
Vref=1.9V
Vref=1.8V
Vref=1.7V
Vref=2.7V
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Figure 16
Low-Power Mode
Gain vs Output Power and Temperature (Analog Control)
22.5
20.0
17.5
15.0
12.5
10.0
Vref=2.0V (Tc=+25 deg C)
Vref=2.0V Tc=+85 deg C)
Vref=1.7V (Tc=+25 deg C)
Vref=1.7V (Tc=+85 deg C)
Tested at:
K Vcc=3.5V
K F=1880 MHz
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 12
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 17
Low-Power Mode - ACPR at +25°C vs Output Power and Vref
(Analog Control)
-45.0
-46.0
-47.0
-48.0
-49.0
-50.0
-51.0
-52.0
-53.0
-54.0
-55.0
Vref=2.0V
Vref=1.9V
Vref=1.8V
Vref=1.7V
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Figure 18
Low-Power Mode - ACPR vs Output Power and Vref at 85°C
(Analog Control)
-45.0
-46.0
-47.0
-48.0
-49.0
-50.0
-51.0
-52.0
-53.0
-54.0
-55.0
Vref=2.0V
Vref=1.9V
Vref=1.8V
Vref=1.7V
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +85°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 13
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 19
Low-Power Mode - ACPR vs Output Power and Temperature
(Analog Control)
-45.0
-46.0
-47.0
-48.0
-49.0
-50.0
-51.0
-52.0
-53.0
-54.0
-55.0
Tc=+25 deg C
Tc=+85 deg C
Tested at:
K Vcc=3.5V
K Vref=2.0V
K F=1880 MHz
Vref=2.0V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Figure 20
Collector Current vs Output Power at +25°C (Digital Control)
600
550
500
450
400
350
300
250
200
150
100
50
(Low-Power)
(Mid-Power)
(High-Power)
Vref=2.7V
Adj Vref
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
Vref=2.7V
Vref=2.7V
Vref=2.0V
Vref=1.7V
0
-20.0 -16.0 -12.0 -8.0 -4.0 0.0
4.0
8.0 12.0 16.0 20.0 24.0 28.0
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 14
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 21
Collector Current vs Output Power (Pout ≤+16 dBm) at +25°C (Digital Control)
180
160
140
120
100
80
Vref=2.7V
Adj Vref
(Low-Power)
(Mid-Power)
Vref=2.7V
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
Vref=2.0V
Vref=2.7V
Vref=1.7V
60
40
20
0
-20.0
-16.0
-12.0
-8.0
-4.0
0.0
4.0
8.0
12.0
16.0
Output Power (dBm)
Figure 22
Gain vs Output Power (Pout ≤+28 dBm) at +25°C (Digital Control)
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
(High-Power)
Vref=2.7V
(Low-Power)
(Mid-Power)
Vref=2.7V
Adj Vref
Vref=2.7V
Vref=2.0V
Tested at:
Vref=1.7V
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
5.0
2.5
0.0
-20.0 -16.0 -12.0 -8.0
-4.0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 15
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 23
ACPR vs Output Power
(Pout ≤+28 dBm) at +25°C (Digital Control)
-45.00
-47.50
-50.00
-52.50
-55.00
-57.50
-60.00
-62.50
-65.00
-67.50
-70.00
-72.50
-75.00
(Low-Power)
(Mid-Power)
(High-Power)
Vref=2.7V
Adj Vref
Vref=1.7V
Vref=2.0V
Vref=2.7V
Tested at:
Vref=2.7V
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
-20.0 -16.0 -12.0 -8.0 -4.0 0.0
4.0
8.0 12.0 16.0 20.0 24.0 28.0
Output Power (dBm)
Figure 24
Noise Figure vs Frequency (3 Devices)
7.00
6.50
6.00
5.50
5.00
4.50
4.00
3.50
3.00
2.50
2.00
Unit 1_2.7V
Unit 2_2.7V
Unit 3_2.7V
Tested at:
K Vcc=3.5V
K Vref = 2.7
K Tc = +25°C
1830
1850
1870
1890
1910
1930
1950
1970
1990
2010
Frequency (MHz)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 16
Worldwide Sales
Representatives
D&L Technical Sales
Spartech South
TEQ Sales, Inc.
Cantec Representatives
Steward Technology
6990 Village Pkwy #206
Dublin, CA 94568
925-833-7978
North
America
6139 S. Rural Road, #102 2115 Palm Bay Road, NE, 920 Davis Road, Suite 304 8 Strathearn Ave, No. 18
Tempe, AZ 85283
480-730-9553
fax: 480-730-9647
Nicholas Delvecchio, Jr.
dlarizona@aol.com
Suite 4
Elgin, IL 60123
847-742-3767
Brampton, Ontario
Canada L6T 4L9
905-791-5922
Palm Bay, FL 32904
321-727-8045
fax: 847-742-3947
Dennis Culpepper
fax: 925-560-6522
John Steward
fax: 321-727-8086
Jim Morris
fax: 905-791-7940
dculpepper@teqsales.com Dave Batten
johnsteward1@msn.com
jim@spartech-south.com
cantec-ott@cantec-o.net
Hi-Peak Technical Sales
P.O. Box 6067
Amherst, NH 03031
866-230-5453
fax: 603-672-9228
sales@hi–peak.com
Sangus OY
Sangus AB
Globes Elektronik & Co.
Klarastrabe 12
MTI Engineering Ltd.
Afek Industrial Park
Hamelacha 11
New Industrial Area
Rosh Hayin 48091
Israel
Sirces srl
Europe
Asia
Lunkintie 21,
Berghamnvagen 68
Box 5004
Via C. Boncompagni, 3B
20139 Milano
90460 Oulunsalo
Finland
74072 Heilbronn
Germany
S–165 10 Hasselby
Sweden
Ronny Gustafson
468-0-380210
fax: 468-0-3720954
Italy
358-8-8251-100
fax: 358-8-8251-110
Juha Virtala
49-7131-7810-0
fax: 49-7131-7810-20
Ulrich Blievernicht
hfwelt@globes.de
3902-57404785
fax: 3902-57409243
Nicola Iacovino
nicola.iacovino@sirces.it
972-3-902-5555
fax: 972-3-902-5556
Adi Peleg
juha.virtala@sangus.fi
adi_p@mti-group.co.il
ITX Corporation
2–5, Kasumigaseki
3–Chome
Sea Union
9F-1, Building A, No 19-3
San-Chung Road
Nankang Software Park
Taiwan, ROC
Chiyoda–Ku
Tokyo 100-6014 Japan
81-3-4288-7073
fax: 81-3-4288-7243
Maekawa Ryosuke
maekawa.ryosuke@
itx–corp.co.jp
Taipei 115
02-2655-3989
fax: 02-2655-3918
Murphy Su
murphy@seaunionweb.com.tw
Headquarters
United Kingdom
Burnt Ash Road
Aylesford, Kent
England
France
Holland
Spain
Worldwide
Distribution
6321 San Ignacio Drive
San Jose, CA 95119
408-360-4073
4 Allee du Cantal
Evry, Cedex
Chr. Huygensweg 17
C/Isobel Colbrand, 6 – 4a
2400 AJ ALPHEN AAN DEN 28050 Madrid
RIJN
France
Spain
fax: 408-281-8802
Art Herbig
art.herbig@avnet.com
ME207XB
33 16079 5900
fax: 33 16079 8903
sales.fr@
The Netherlands
31 172 446060
fax: 33 172 443414
sales.nl@
34 913588611
fax: 34 913589271
sales.es@
44 1622882467
fax: 44 1622882469
rfsales.uk@
bfioptilas.avnet.com
bfioptilas.avnet.com
Belgium and Luxembourg
Cipalstraat
bfioptilas.avnet.com
bfioptilas.avnet.com
2440 GEEL
Belgium
32 14 570670
fax: 32 14 570679
sales.be@bfioptilas.avnet.com
United States
(East Coast)
United States
Europe
Asia
Sales Office
Headquarters
(West Coast)
Raytheon
Raytheon
Raytheon
Raytheon
AM Teckenberg 53
40883 Ratingen
Germany
49-2102-706-155
fax: 49-2102-706-156
Peter Hales
peter_j_hales@
raytheon.com
Room 601, Gook Je Ctr. Bldg
191 Hangang Ro 2-GA
Yongsan-Gu, Seoul,
Korea 140-702
82-2-796-5797
fax: 82-2-796-5790
T.G. Lee
362 Lowell Street
Andover, MA 01810
978-684-8628
fax: 978-684-8646
Walter Shelmet
wshelmet@
362 Lowell Street
Andover, MA 01810
978-684-8919
fax: 978-684-8646
Rob Sinclair
robert_w_sinclair@
rrfc.raytheon.com
rrfc.raytheon.com
tg_lee@
rrfc.raytheon.com
Customer
Support
978-684-8900
fax: 978-684-5452
customer_support@rrfc.raytheon.com
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised August 27, 2001
Andover, MA 01810
Page 17
相关型号：
©2020 ICPDF网 联系我们和版权申明