05E3-W [RECTRON]
Rectifier Diode, 1 Element, 0.5A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2;
| 型号： | 05E3-W |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 0.5A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2 光电二极管 |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
05E1
THRU
05E6
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SURFACE MOUNT SUPER FAST RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 0.5 Ampere
FEATURES
* High reliability
* Low leakage
* Low forward voltage
* High current capability
* Super fast switching speed
* High surge capability
* Good for switching mode circuit
SOD-123
MECHANICALDATA
* Case: Molded plastic
.150 (3.80)
.142 (3.60)
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
.067 (1.70)
.059 (1.50)
.031 (0.80)
.028 (0.70)
* Weight: 0.016 gram
.106 (2.70)
.098 (2.50)
.051 (1.30)
.050 (1.26)
.016 (0.40)
.008 (0.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
05E1
05E2
05E3
05E4
05E5
05E6
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
V
V
RRM
RMS
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
Volts
Volts
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
V
DC
O
100
I
0.5
15
Amps
Amps
at TA
= 55oC
Peak Forward Surge Current IFM (surge):8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
15
10
pF
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-55 to + 150
ELECTRICAL CHARACTERISTICS (At T
CHARACTERISTICS
Maximum Forward Voltage at 0.5A DC
A
= 25oC unless otherwise noted)
SYMBOL
05E1
05E2
05E3
05E4
05E5
05E6
UNITS
Volts
V
F
0.95
1.25
Maximum DC Reverse Current
@T
@T
A
A
= 25oC
=100oC
5.0
100
35
I
R
uAmps
nSec
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
trr
NOTES : 1. Test Conditions: I
F
=0.5A, I
R=-1.0A, IRR=-0.25A.
2002-9
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
(
)
RATING AND CHARACTERISTIC CURVES 05E1 THRU 05E6
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
50
NONINDUCTIVE
10
trr
NONINDUCTIVE
1.0
0.5
0
+0.5A
Single Phase
Half Wave 60Hz
Resistive or
(-)
D.U.T
Inductive Load
( + )
0
PULSE
GENERATOR
(NOTE 2)
25 Vdc
(approx)
( - )
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
0
25 50 75 100 125150175
1cm
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
NOTES:
SET TIME BASE FOR
10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
100
10
T
= 150
= 100
J
1.0
.1
T
J
T
= 25
J
1.0
.1
05E1~05E4
05E5~05E6
Pulse Width = 300uS
1% Duty Cycle
T
= 25
J
.01
.001
.01
0
.2
.4
.6
.8
1.0
1.2
1.4
0
20
40
60
80
100
120 140
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
25
200
100
60
20
8.3ms Single Half Sine-Wave
(JEDEC Method)
15
40
20
12
9
05E1~05E4
10
6
4
T
= 25
05E5~05E6
J
6
3
0
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
1
2
5
10
20
50
100
REVERSE VOLTAGE, ( V )
NUMBER OF CYCLES AT 60Hz
RECTRON
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