1N5228B [RECTRON]
500mW 5% DO-35 ZENER DIODE; 500mW的5 ％ DO- 35稳压二极管
| 型号： | 1N5228B |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | 500mW 5% DO-35 ZENER DIODE |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5223B
THRU
1N5261B
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
500mW 5% DO-35 ZENER DIODE
Absolute Maximun Ratings (Ta=25oC)
Dimensions
Items
Symbol
PTOT
Ratings
500
Unit
mW
DO-35
Power Dissipation
Power Derating
4.0
1.2
mW/oC
o
(above 75 C)
2 6 M IN
0 .45 7
0 .55 9
Forward Voltage
@If = 10 mA
D IA .
Vf
V
Vz Tolerence
5
%
oC
oC
Junction Temp.
Storage Temp.
TJ
-65 to 175
-65 to 175
4 .2
m ax .
TSTG
Mechanical Data
Items
Package
2 .0
m ax .
D IA .
Materials
DO-35
Case
Hermetically sealed glass
2 6 M IN
Lead/Finish
Chip
Double Stud/Solder Plating
Glass Passivated
Dimensions in millimeters
Electrical Characteristics (Ta=25oC)
TEMP.
COEFF.
ZENER
VOLTAGE
MAX ZENER
IMPEDANCE
MAX ZENER
IMPEDANCE
Izt = 0.25mA
MAXIMUM
REVERSE
CURRENT
TYPE
dvz
(%/ oC)
Vz(V) Izt(mA)
Rz (ohms) Izt(mA0
Rz (ohms)
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
VR (V) IR (uA)
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
20
20
20
20
20
20
20
20
20
20
20
20
20
30
30
29
28
24
23
22
19
17
11
7
20
20
20
20
20
20
20
20
20
20
20
20
20
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.6
75
75
50
25
15
10
5
-0.080
-0.080
-0.075
-0.070
-0.065
-0.060
+/-0.055
+/-0.030
+/-0.030
+/-0.038
+/-0.038
+0.045
+0.050
5
5
5
5
7
5
5
3
Electrical Characteristics (Ta=25oC)
TEMP.
COEFF.
ZENER
VOLTAGE
MAX ZENER
IMPEDANCE
MAX ZENER
IMPEDANCE
Izt = 0.25mA
MAXIMUM
REVERSE
CURRENT
TYPE
dvz
(%/ oC)
Vz(V) Izt(mA)
Rz (ohms) Izt(mA0
Rz (ohms)
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
VR (V) IR (uA)
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N52459B
1N5260B
1N5261B
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
20
20
6
8
20
20
20
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
20
8
20
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
Notes:
1. The Electrical characteristics are measured after allowinh the device to stabilize for 20 sec. when mounted
with a 3/8” minimum lead length from the case.
2. Temperature Coefficient (dvz)
a. Izt= 7.5ma, T1= 25oC, T2= 125oC (1N5223B - 1N5242B)
b. Izt= rated Izt, T1= 25oC, T2= 125oC (1N5243B - 1N5261B)
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