1N5400 [RECTRON]
SILICON RECTIFIER; 硅整流型号: | 1N5400 |
厂家: | RECTRON SEMICONDUCTOR |
描述: | SILICON RECTIFIER |
文件: | 总2页 (文件大小:27K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N5400
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5408
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
FEATURES
* Low cost
* Low leakage
* Low forward voltage drop
* High current capability
DO-201AD
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
(
)
.052 1.3
DIA.
(
)
.048 1.2
1.0 (25.4)
MIN.
* Weight: 1.18 grams
.375 (9.5)
.335 (8.5)
(
)
.220 5.6
DIA.
(
)
.197 5.0
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS
V
V
RRM
RMS
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Maximum DC Blocking Voltage
V
DC
O
100
1000
Maximum Average Forward Rectified Current
I
3.0
Amps
Amps
.375” (9.5mm) lead length at TL
= 105oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
200
40
Typical Junction Capacitance (Note)
Typical Thermal Resistance
CJ
pF
0C/ W
0 C
R θ J A
, TSTG
30
T
J
-65 to + 175
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
SYMBOL
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS
CHARACTERISTICS
1.1
5.0
50
Volts
V
F
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
@T
A
A
= 25oC
= 100oC
uAmps
I
R
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
= 75oC
NOTES : Measured at 1 MH and applied reverse voltage of 4.0 volts
30
uAmps
2001-5
L
Z
(
)
RATING AND CHARACTERISTIC CURVES 1N5400 THRU 1N5408
FIG. 2 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
200
100
4
NON-REPETITIVE
3
2
50
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm) Lead Length
REPETITIVE
8.3ms Single Half
Sine-Wave
(JEDED Method)
1
0
10
1
5
10
50
100
0
25
50
75
100
125
150
175
LEAD TEMPERATURE, (
)
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD VOLTAGE, (V)
100
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
200
100
60
30
10
40
20
10
T
= 25
J
6
4
3.0
1.0
T
= 25
J
Pulse Width=300uS
1% Duty Cycle
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
.1
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
10
.3
.01
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
1.0
.1
INSTANTANEOUS FORWARD VOLTAGE, (V)
T
= 25
J
.01
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
RECTRON
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