2N4401 [RECTRON]
TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN); TO - 92双极晶体管晶体管（ NPN ）
| 型号： | 2N4401 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) |
| 文件： | 总6页 (文件大小：442K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4401
TO - 92BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
0.14 (3.6)
0.18 (4.6)
FEATURES
* Power dissipation
PCM:
0.6 W(Tamb=25OC)
Collector current
*
*
*
ICM:
0.6
Collector-base voltage
60 V
A
V
:
(BR)CBO
Operating and storage junction temperature range
T ,Tstg: -55OC to+150OC
J
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
max.
0.022 (0.55)
0.098 (2.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches
and (millimeters)
(TO-92)
Bottom
MAXIMUM RATINGES ( @ TA = 25OC unless otherwise noted)
RATINGS
(1)
SYMBOL
PD
VALUE
600
UNITS
mW
oC
o
O
Max. Steady State Power Dissipation
Max. Operating Temperature Range
Storage Temperature Range
@TA=25 C Derate above 25 C
150
TJ
TSTG
oC
-55 to +150
ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted)
CHARACTERISTICS
SYMBOL
MIN.
-
TYP.
-
MAX.
417
UNITS
oC/W
Thermal Resistance Junction to Ambient
R θJA
Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina
2010-5
2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) (I = 1.0 mAdc, I = 0)
V
40
-
Vdc
C
B
(BR)CEO
Collector-Base Breakdown Voltage (I = 0.1uAdc, I = 0)
V
V
60
6.0
-
-
Vdc
Vdc
C
E
(BR)CBO
(BR)EBO
Emitter-Base Breakdown Voltage (I = 0.1uAdc, I = 0)
-
E
C
I
uAdc
uAdc
Base Cutoff Current (V
= 35Vdc, V
= 0.4Vdc)
BE(off)
0.1
0.1
BEV
CE
I
Collector Cutoff Current (V
= 35Vdc, V
= 0.4Vdc)
EB
-
CEX
CE
ON CHARACTERISTICS(1)
DC Current Gain (I = 0.1mAdc, V
C
= 1.0Vdc)
= 1.0Vdc)
20
40
80
100
40
-
-
-
CE
CE
(I = 1.0mAdc, V
C
(I = 10mAdc, V
= 1.0Vdc)
= 1.0Vdc)
hFE
-
-
C
CE
(I = 150mAdc, V
C
300
-
CE
(I = 500mAdc, V
= 2.0Vdc)
CE
C
Collector-Emitter Saturation Voltage (1) (I = 150mAdc, I = 15mAdc)
0.4
0.75
C
B
V
Vdc
Vdc
CE(sat)
(I = 500mAdc, I = 50mAdc)
B
-
C
Base-Emitter Saturation Voltage (1) (I = 150mAdc, I = 15mAdc)
0.75
-
0.95
1.2
C
B
V
BE(sat)
(I = 500mAdc, I = 50mAdc)
C
B
SMALL-SIGNAL CHARACTERISTICS
f
250
-
-
MHz
pF
Current-Gain-Bandwidth Product (I = 20mAdc, V
C
= 10Vdc, f= 100MHz)
T
CE
C
6.5
30
Output Capacitance (V
Input Capacitance (V
= 5.0Vdc, I = 0, f= 1.0MHz)
E
cb
CB
C
-
pF
= 0.5Vdc, I = 0, f= 1.0MHz)
C
eb
EB
h
1.0
0.1
40
1.0
15
kohms
Input lmpedance (V
= 10Vdc, I = 1.0mAdc, f= 1.0kHz)
C
ie
CE
-
4
h
8.0
500
30
X 10
-
Voltage Feedback Ratio (V
= 10Vdc, I = 1.0mAdc, f= 1.0kHz)
C
re
CE
h
Small-Signal Current Gain (V
= 10Vdc, I = 1.0mAdc, f= 1.0kHz)
fe
CE
C
h
umhos
Output Admittance (V
= 10Vdc, I = 1.0mAdc, f= 1.0kHz)
C
oe
CE
SWITCHING CHARACTERISTICS
Delay Time
t
-
-
-
15
20
d
(V
= 30Vdc, V
= 2.0Vdc, I = 150mAdc, I = 15mAdc)
B1
ns
ns
CC
EB
C
Rise Time
t
r
Storage Time
t
225
s
(V
= 30Vdc, I = 150mAdc, I = I = 15mAdc)
B1 B2
CC
C
Fall Time
t
f
-
30
<
<
-
Note : Pulse Test: Pulse Width 300ms,Duty Cycle 2.0%
-
RATING AND CHARACTERISTICS CURVES ( 2N4401
)
25OC
100OC
30
20
10
7.0
V
= 30V
/I = 10
B
CC
5.0
I
C
3.0
2.0
Cobo
Q
T
10
1.0
7.0
5.0
0.7
0.5
0.3
0.2
Ccb
Q
A
3.0
2.0
0.1
0.1
0.2 0.3
1.0
2.0 3.0 5.0
10
20 30 50
10
20
30
50
70 100
200
300
500
REVERSE VOLTAGE (V)
I
, COLLECTOR CURRENT (mA)
C
Figure 1. Capacitances
Figure 2. Charge Data
100
70
100
70
I
/I =10
B
V
I
= 30V
C
CC
C
t
/I =10
r
B
50
50
t @ V = 30V
CC
r
t
f
30
20
30
20
t @ V = 10V
r
t
t
CC
@ V = 2.0V
d
d
EB
@ V = 0V
EB
10
7.0
5.0
10
7.0
5.0
10
20
30
50
70 100
200
300
500
10
20
30
I , COLLECTOR CURRENT (mA)
C
50
70 100
200
300
500
I
, COLLECTOR CURRENT (mA)
C
Figure 3. Turn-On Time
Figure 4. Rise and Fall Times
100
70
300
200
t
I
'=t -1/8t
s
B1= B2
s
f
V
= 30V
I
CC
I
I
B1= B2
I
/I = 10 to 20
C
B
50
I
/I = 20
B
C
30
20
100
I
/I =10
B
C
70
50
10
7.0
5.0
30
10
20
30
50
70 100
200
300
500
10
20
30
50
70 100
200
300
500
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 5. Storage Time
Figure 6. Fall Time
RATING AND CHARACTERISTICS CURVES ( 2N4401
)
10
10
I
I
I
I
=1.0mA, R = 150
S
Ω
Ω
Ω
f = 1.0 kHz
C
C
C
C
=500
=100
u
u
A, R = 200
S
R
= OPTIMUM
SOURCE
RESISTANCE
8.0
S
8.0
A, R = 2.0 k
S
S
I
I
=50uA
=100uA
C
C
=50
u
A, R = 4.0kΩ
RS =
I
I
=500uA
C
=1.0mA
C
6.0
4.0
2.0
0
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
50
100 200
R
500 1.0k 2.0k 5.0k 10k
, SOURCE RESISTANCE (OHMS)
20k
50k 100k
f, FREQUENCY (KHz)
S
Figure 7.Frequency Effects
Figure 8.Source Resistance Effects
300
200
400
300
4401 UNIT 1
4401 UNIT 2
200
100
100
80
4401 UNIT 1
4401 UNIT 2
70
50
60
40
30
30
20
20
0.1
0.2 0.3
I
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 9.Cuttent Gain
Figure 10.Input Impedance
100
50
10
7.0
5.0
4401 UNIT 1
4401 UNIT 2
3.0
2.0
20
10
1.0
0.7
0.5
4401 UNIT 1
4401 UNIT 2
5.0
2.0
1.0
0.3
0.2
0.1
0.2 0.3
I
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 11.Voltage Feedback Ratio
Figure 12.Temperature Coefficients
RATING AND CHARACTERISTICS CURVES (
)
2N4401
3.0
2.0
VCE = 1.0V
VCE = 10V
T
= 125OC
J
1.0
0.7
0.5
25OC
-55OC
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
200
300
500
I
, COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
1.0
0.8
T
= 25OC
J
0.6
0.4
0.2
0
I
= 1.0mA
10 mA
100 mA
500 mA
C
0.01
0.02 0.03
0.05 0.07
0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
I
,
BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
1.0
0.8
+0.5
T
= 25OC
J
V
@ I /I = 10
C B
BE(sat)
0
Θ
for V
CE(sat)
VC
-0.5
-1.0
0.6
0.4
V
@ V = 10V
CE
BE
-1.5
-2.0
-2.5
0.2
0
V
@ I /I = 10
C B
CE(sat)
Θ
for V
BE
VB
0.1
0..2
0.5 1.0 2.0
5.0 10
20
50 100 200
500
0.1
0..2
0.5 1.0 2.0
5.0 10
20
50 100 200
500
I
, COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 15. "ON" Voltages
Figure 16. Temperature Coefficients
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
相关型号：
2N4401-18FLEADFREE
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F, 3 PIN
CENTRAL
2N4401-18R
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R, 3 PIN
CENTRAL
2N4401-18RLEADFREE
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R, 3 PIN
CENTRAL
2N4401-5T1
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T1, 3 PIN
CENTRAL
2N4401-AMMO
TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明