2SD596DV2-T [RECTRON]

Transistor;
2SD596DV2-T
型号: 2SD596DV2-T
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

Transistor

文件: 总2页 (文件大小:293K)
中文:  中文翻译
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RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
2SD596  
SOT-23 BIPOLAR TRANSISTORS  
TRANSISTOR(PNP)  
FEATURES  
* Power dissipation  
PCM :  
0.2  
0.7  
30  
W (Tamb=25OC)  
Collector current  
ICM :  
Collector-base voltage  
*
*
*
A
V
:
V
(BR)CBO  
SOT-23  
Operating and storage junction temperature range  
T ,Tstg: -55OC to +150OC  
J
COLLECTOR  
3
0.055(1.40)  
0.047(1.20)  
BASE  
MECHANICAL DATA  
* Case: Molded plastic  
1
2
EMITTER  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
0.020(0.50)  
0.012(0.30)  
0.004(0.10)  
0.000(0.00)  
* Weight: 0.008 gram  
0.100(2.55)  
0.089(2.25)  
0.020(0.50)  
0.012(0.30)  
1
2
0.019(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
3
Dimensions in inches and (millimeters)  
o
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )  
CHARACTERISTICS  
Collector-base breakdown voltage (I = 100µA, I =0)  
SYMBOL  
MIN  
30  
TYP  
-
MAX  
-
UNITS  
V
V
V
V
V
C
E
(BR)CBO  
(BR)CEO  
(BR)EBO  
-
-
25  
-
-
Collector-emitter breakdown voltage (I = 1mA, I =0)  
C
B
Emitter-base breakdown voltage (I = 100µA, I =0)  
E
C
5
-
V
-
-
-
µA  
Collector cut-off current (V = 30V, I =0)  
I
0.1  
0.1  
CB  
E
CBO  
-
Emitter cut-off current (V = 5V, I =0)  
I
µA  
EB  
C
EBO  
*
110  
400  
-
-
-
DC current gain (V = 1V, I = 100mA)  
h
h
CE  
C
FE(1)  
*
-
DC current gain (V = 1V, I = 700mA)  
CE  
C
50  
-
FE(2)  
*
Collector-emitter saturation voltage (I = 700mA, I = 70mA)  
V
CE(sat)  
-
-
-
0.6  
0.7  
-
V
V
C
B
Base-emitter voltage (V = 6V, I = 10mA)  
V
BE(on)  
*
0.6  
140  
CE  
C
Transition frequency (V = 6V, I = 10mA)  
f
MHz  
CE  
C
T
*
Pulse teat: Pulse width <350µs, Duty Cycle <2%.  
CLASSIFICATION OF h  
FE  
DV5  
250-400  
2006-3  
DV3  
170-270  
DV2  
DV4  
RANK  
Range  
DV1  
110-180  
135-220  
200-320  
DISCLAIMER NOTICE  
Rectron Inc reserves the right to make changes without notice to any product  
specification herein, to make corrections, modifications, enhancements or other  
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-  
lity for any errors or inaccuracies. Data sheet specifications and its information  
contained are intended to provide a product description only. "Typical" paramet-  
ers which may be included on RECTRON data sheets and/ or specifications ca-  
n and do vary in different applications and actual performance may vary over ti-  
me. Rectron Inc does not assume any liability arising out of the application or  
use of any product or circuit.  
Rectron products are not designed, intended or authorized for use in medical,  
life-saving implant or other applications intended for life-sustaining or other rela-  
ted applications where a failure or malfunction of component or circuitry may di-  
rectly or indirectly cause injury or threaten a life without expressed written appr-  
oval of Rectron Inc. Customers using or selling Rectron components for use in  
such applications do so at their own risk and shall agree to fully indemnify Rect-  
ron Inc and its subsidiaries harmless against all claims, damages and expendit-  
ures.  
RECTRON  

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