BR810 [RECTRON]

SINGLE-PHASE SILICON BRIDGE RECTIFIER; 单相硅桥式整流器
BR810
型号: BR810
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

SINGLE-PHASE SILICON BRIDGE RECTIFIER
单相硅桥式整流器

整流二极管 桥式整流二极管 局域网
文件: 总2页 (文件大小:26K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BR805  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
BR810  
SINGLE-PHASE SILICON BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes  
FEATURES  
* Surge overload rating: 125 amperes peak  
* Low forward voltage drop  
* Mounting position: Any  
* Mounting: Hole thru for # 6 screw  
BR-8  
MECHANICAL DATA  
* UL listed the recognized component directory, file #E94233  
* Epoxy: Device has UL flammability classification 94V-O  
(
)
)
.296 7.5  
(
.255 6.5  
(
)
)
.042 1.1  
.75  
DIA.  
MIN.  
(
.039 1.0  
(
)
19.1  
TYP.  
(
)
)
.770 19.6  
HOLE FOR  
NO. 6 SCREW  
(
.730 18.5  
AC  
(
)
)
.520 13.2  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
(
.480 12.2  
(
)
)
.770 19.6  
AC  
(
.730 18.5  
(
)
.520 13.2  
(
)
.480 12.2  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
BR805  
BR81  
BR82  
BR84  
BR86  
BR88  
BR810 UNITS  
V
V
RRM  
RMS  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
8.0  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum DC Blocking Voltage  
V
DC  
100  
1000  
Maximum Average Forward Tc = 50oC  
Rectified Output Current at: Tc = 100oC  
Amps  
I
O
6.0  
TA  
= 50oC  
6.0  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
125  
Amps  
T
J
-55 to + 125  
-55 to + 150  
0 C  
0 C  
Operating Temperature Range  
Storage Temperature Range  
T
STG  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
BR805  
BR81  
BR82  
BR84  
BR86  
BR88  
BR810 UNITS  
Maximum Forward Voltage Drop per element at 4.0A DC  
VF  
1.1  
10  
Volts  
= 25oC  
uAmps  
@TA  
C
Maximum Reverse Current at Rated  
DC Blocking Voltage per element  
I
R
@T  
= 100oC  
0.2  
mAmps  
2001-5  
(
)
RATING AND CHARACTERISTIC CURVES BR805 THRU BR810  
FIG. 1 - MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
FIG. 2 - TYPICAL FORWARD CURRENT  
DERATING CURVE  
250  
10  
8
8.3ms Single Half Sine-Wave  
(JEDEC Method)  
200  
150  
100  
50  
6
4
Single Phase Half Wave  
60Hz Indutive or  
Resistive Load  
2
0
0
0
50  
100  
150  
1
2
4
6 810  
20  
40 6080100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE, (  
)
FIG. 3- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS  
10  
100  
10  
T
= 25  
J
Pulse Width = 300us  
1% Duty Cycle  
1.0  
1.0  
.1  
T
= 25  
J
.1  
.01  
.01  
1.2 1.3  
INSTANTANEOUS FORWARD VOLTAGE, (V)  
.6  
.7  
.8  
.9  
1.0 1.1  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )  
RECTRON  

相关型号:

BR810D

Bridge Rectifier Diode, 2A, 1000V V(RRM),
LITTELFUSE

BR810D

Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon
DIODES

BR810DF

Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon
DIODES

BR810DG

Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon,
DIODES

BR810DL

2 Amp Single Phase Bridge Rectifier 50 to 1000 Volts
MCC

BR810DL

Bridge Rectifier Diode, 2A, 1000V V(RRM),
LITTELFUSE

BR810DL

Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, PLASTIC, BR-8D, 4 PIN
MICROSEMI

BR810DL-B

Rectifier Diode,
MCC

BR810DL-BP

Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, PLASTIC, BR-8D, 4 PIN
MCC

BR810DLC

Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, PLASTIC, BR-8D, 4 PIN
MCC

BR810DLCP

Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, PLASTIC, BR-8D, 4 PIN
MCC

BR810DLG

Bridge Rectifier Diode, 2A, 1000V V(RRM),
DIODES