EDB103-S [RECTRON]

1A, 150V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DB-S, 4 PIN;
EDB103-S
型号: EDB103-S
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

1A, 150V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DB-S, 4 PIN

光电二极管
文件: 总5页 (文件大小:248K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EDB101S  
THRU  
EDB106S  
GLASS PASSIVATED SUPER FAST  
SILICON SURFACE MOUNT BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere  
FEATURES  
* Surge overload rating - 40 amperes peak  
* Ideal for printed circuit board  
* Reliable low cost construction utilizing molded  
* Glass passivated device  
* Polarity symbols molded on body  
* Mounting position: Any  
DB-S  
* Weight: 1.0 gram  
(
)
)
.310 7.9  
(
.290 7.4  
(
)
.255 6.5  
MECHANICAL DATA  
(
)
.245 6.2  
* Epoxy: Device has UL flammability classification 94V-O  
.009  
(
)
0.229  
(
)
)
.013 .330  
(
.003 .076  
(
)
.410 10.4  
(
)
)
.042 1.1  
(
)
.360 9.4  
(
.038 1.0  
(
)
)
.060 1.524  
(
.040 1.016  
(8.8)  
(7.8)  
.346  
.307  
(
)
)
0.135 3.4  
(
0.115 2.9  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
(
)
)
.205 5.2  
(
.195 5.0  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T = 25oC unless otherwise noted)  
A
RATINGS  
SYMBOL  
VRRM  
EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S UNITS  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
VRMS  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
VDC  
IO  
100  
Volts  
Maximum Average Forward Output Current at T = 55oC  
A
1.0  
30  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
Amps  
0C/W  
R
R
θ
θ
J A  
J L  
38  
12  
Typical Thermal Resistance (Note 3)  
pF  
0 C  
Typical Junction Capacitance (Note 2)  
C
15  
10  
J
Operating and Storage Temperature Range  
T
J,  
T
STG  
-55 to + 150  
ELECTRICAL CHARACTERISTICS (At T = 25oC unless otherwise noted)  
A
CHARACTERISTICS  
SYMBOL  
VF  
UNITS  
Volts  
EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S  
1.05 1.35 1.70  
Maximum Forward Voltage at 1.0A DC  
@TA = 25oC  
@TA = 100oC  
µAmps  
Maximum Reverse Current at Rated  
5.0  
100  
50  
IR  
DC Blocking Voltage per element  
µAmps  
Maximum Reverse Recovery Time (Note 1)  
nSec  
trr  
Note: 1.Test Conditions: I =0.5A,I =-1.0A,I =-0.25A.  
RR  
2006-11  
REV:B  
F
R
2.Measured at 1MHz and applied reverse voltage of 4.0 volts.  
3.Thermal Resistance : Mounted on PCB.  
RATING AND CHARACTERISTICS CURVES ( EDB101S THRU EDB106S )  
trr  
+0.5A  
50  
NONINDUCTIVE  
10 Ω  
NONINDUCTIVE  
( - )  
PULSE  
GENERATOR  
(NOTE 2)  
D.U.T  
0
( + )  
25 Vdc  
(approx)  
( - )  
-0.25A  
1
( + )  
OSCILLOSCOPE  
(NOTE 1)  
NON-  
INDUCTIVE  
NOTES: 1 Rise Time = 7ns max. Input Impedance =  
1 megohm. 22pF.  
-1.0A  
2. Rise Time = 10ns max. Source Impedance =  
50 ohms.  
1cm  
SET TIME BASE FOR 10 ns/cm  
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC  
2.0  
1000  
100  
T
= 100 OC  
A
T
= 75 OC  
1.0  
10  
A
T
= 25 OC  
A
1.0  
Single Phase  
Half Wave 60Hz  
Resistive or  
Inductive Load  
0
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0
20  
40  
60  
80  
100  
120  
140  
LEAD TEMPERATURE, (OC)  
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)  
FIG.2 TYPICAL FORWARD CURRENT  
DERATING CURVE  
FIG.3 TYPICAL REVERSE  
CHARACTERISTICS  
RATING AND CHARACTERISTICS CURVES ( EDB101S THRU EDB106S )  
35  
30  
25  
20  
100  
10  
8.3ms Single Half Sine-Wave  
(JEDED Method)  
T
= 25 OC  
J
1.0  
15  
10  
0.1  
5
0
Pulse Width=300µS  
1% Duty Cycle  
0.01  
1
2
5
10  
20  
50  
100  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
INSTANTANEOUS FORWARD VOLTAGE, (V)  
NUMBER OF CYCLES AT 60Hz  
FIG.4 TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG.5 MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
200  
100  
60  
40  
20  
10  
6
4
= 25 OC  
0.4  
2
T
J
1
0.1 0.2  
1.0  
2
4
10  
20  
40  
100  
REVERSE VOLTAGE, (V)  
FIG.6 TYPICAL JUNCTION CAPACITANCE  
Mounting Pad Layout  
0.404 MAX.  
(10.26 MAX.)  
0.205 (5.2)  
0.195 (5.0)  
0.047 MIN.  
(1.20 MIN.)  
0.060 MIN.  
(1.52 MIN.)  
Dimensions in inches and (millimeters)  
DISCLAIMER NOTICE  
Rectron Inc reserves the right to make changes without notice to any product  
specification herein, to make corrections, modifications, enhancements or other  
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-  
lity for any errors or inaccuracies. Data sheet specifications and its information  
contained are intended to provide a product description only. "Typical" paramet-  
ers which may be included on RECTRON data sheets and/ or specifications ca-  
n and do vary in different applications and actual performance may vary over ti-  
me. Rectron Inc does not assume any liability arising out of the application or  
use of any product or circuit.  
Rectron products are not designed, intended or authorized for use in medical,  
life-saving implant or other applications intended for life-sustaining or other rela-  
ted applications where a failure or malfunction of component or circuitry may di-  
rectly or indirectly cause injury or threaten a life without expressed written appr-  
oval of Rectron Inc. Customers using or selling Rectron components for use in  
such applications do so at their own risk and shall agree to fully indemnify Rect-  
ron Inc and its subsidiaries harmless against all claims, damages and expendit-  
ures.  

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