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EFM205L-T [RECTRON]

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EFM205L-T
型号： EFM205L-T
厂家： RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
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二极管
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EFM201  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
EFM206  
SURFACE MOUNT GLASS PASSIVATED  
SUPER FAST SILICON RECTIFIER  
VOLTAGE RANGE 50 to 400 Volts CURRENT 2.0 Amperes  
FEATURES  
* Glass passivated device  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.098 gram  
DO-214AA  
MECHANICAL DATA  
( )  
0.083 2.11  
* Epoxy : Device has UL flammability classification 94V-0  
(
)
)
0.155 3.94  
(
)
0.077 1.96  
(
0.130 3.30  
(
)
0.180 4.57  
(
)
0.160 4.06  
(
)
0.012 0.305  
(
)
0.006 0.152  
(
)
)
)
0.096 2.44  
(
0.084 2.13  
(
0.060 1.52  
(
)
)
0.008 0.203  
(
)
0.030 0.76  
(
0.004 0.102  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
(
)
)
0.220 5.59  
(
0.205 5.21  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
EFM201 EFM202 EFM203 EFM204 EFM205 EFM206  
UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Volts  
V
V
RRM  
RMS  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
Volts  
Volts  
Volts  
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
V
DC  
O
100  
I
2.0  
75  
Amps  
Amps  
at TA  
= 55oC  
Peak Forward Surge Current IFM (surge): 8.3 ms single half  
sine-wave superimposed on rated load (JEDEC method)  
I
FSM  
Typical Junction Capacitance (Note 2)  
C
J
30  
20  
pF  
0 C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-65 to + 175  
ELECTRICAL CHARACTERISTICS (At T  
CHARACTERISTICS  
Maximum Forward Voltage at 2.0A DC  
A
= 25oC unless otherwise noted)  
SYMBOL  
EFM201 EFM202 EFM203 EFM204 EFM205 EFM206  
0.95 1.25  
UNITS  
Volts  
V
F
Maximum DC Reverse Current  
@T  
@T  
A
A
= 25oC  
=150oC  
5.0  
50  
35  
I
R
uAmps  
at Rated DC Blocking Voltage  
Maximum Reverse Recovery Time (Note 1)  
trr  
nSec  
NOTES : 1. Test Conditions: I  
F
=0.5A, I  
R=-1.0A, IRR=-0.25A.  
2001-5  
2. Measured at 1 MH  
Z
and applied reverse voltage of 4.0 volts.  
RATING AND CHARACTERISTIC CURVES ( EFM201 THRU EFM206 )  
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC  
FIG. 2 - TYPICAL FORWARD  
CURRENT DERATING CURVE  
50  
NONINDUCTIVE  
10  
trr  
NONINDUCTIVE  
3.0  
2.0  
+0.5A  
( - )  
PULSE  
GENERATOR  
(NOTE 2)  
D.U.T  
( + )  
0
25 Vdc  
(approx)  
( - )  
-0.25A  
Single Phase  
Half Wave 60Hz  
Resistive or  
1.0  
0
1
OSCILLOSCOPE  
(NOTE 1)  
( + )  
NON-  
Inductive Load  
INDUCTIVE  
-1.0A  
0
25 50 75 100 125150175  
1cm  
1
Rise Time = 7ns max. Input Impedance =  
1 megohm. 22pF.  
NOTES:  
SET TIME BASE FOR  
10 ns/cm  
AMBIENT TEMPERATURE (  
)
2. Rise Time = 10ns max. Source Impedance =  
50 ohms.  
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS  
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
10  
100  
T
= 150  
= 100  
J
1.0  
.1  
10  
EFM201~EFM204  
EFM205~EFM206  
T
J
T
= 25  
J
1.0  
Pulse Width = 300uS  
1% Duty Cycle  
T
= 25  
J
.1  
.01  
.001  
.01  
0
20  
40  
60  
80  
100  
120 140  
0
.2  
.4  
.6  
.8  
1.0  
1.2  
1.4  
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)  
INSTANTANEOUS FORWARD VOLTAGE, (V)  
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT  
105  
FIG. 6 - TYPICAL JUNCTION CAPACITANCE  
200  
100  
60  
90  
8.3ms Single Half Sine-Wave  
(
)
JEDEC Method  
75  
40  
EFM201~EFM204  
EFM205~EFM206  
20  
60  
45  
30  
15  
0
10  
6
4
T
= 25  
J
2
1
.1 .2 .4  
1.0  
2
4
10 20 40 100  
1
2
5
10  
20  
50  
100  
NUMBER OF CYCLES AT 60Hz  
REVERSE VOLTAGE, ( V )  
RECTRON  

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