FR804SR [RECTRON]
Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, D2PAK-2;
| 型号： | FR804SR |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, D2PAK-2 整流二极管 局域网 快速恢复二极管 |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FR801
THRU
FR806
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FAST RECOVERY
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes
FEATURES
* Fast switching
* Low leakage
* Low forward voltage drop
* High current capability
* High surge capability
* High reliability
TO-220A
(
)
.187 4.7
(
)
.148 3.8
MECHANICAL DATA
(
)
)
.153 3.9
(
)
.413 10.5
.108
(
.146 3.7
* Case: TO-220A molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
(
)
.374 9.5
(
)
2.75
(
(
)
)
.053 1.3
.047 1.2
(
)
.270 6.9
(
)
.230 5.8
(
(
)
)
.610 15.5
.583 14.8
* Weight: 2.24 grams
.04MAX.
* Polarity: As marking
(
)
1.0
.157
(
)
4.0
(
)
)
.583 14.8
.051
(
.531 13.5
(
)
1.3
(
)
)
.043 1.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
.035 0.9
(
)
.022 0.56
(
)
)
.102 2.6
(
)
.014 0.36
(
.091 2.3
.126
(
)
3.2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
FR801
50
FR802
100
FR803
200
FR804
400
FR805
600
FR806
800
UNITS
V
V
RRM
Volts
Volts
Volts
Amps
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
RMS
35
70
140
280
420
560
Maximum DC Blocking Voltage
V
DC
O
50
100
200
400
600
800
Maximum Average Forward Rectified Current at T
C
= 75oC
I
8.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
200
Amps
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
R θ J C
3
0C/W
pF
0 C
CJ
50
T
J
, TSTG
-65 to + 150
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 8.0A DC
Maximum DC Reverse Current
SYMBOL
FR801
FR802
FR803
FR804
FR805
FR806
UNITS
Volts
V
F
1.3
10
uAmps
at Rated DC Blocking Voltage T
Maximum Full Load Reverse Current Average,
Full Cycle at T
= 100oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I = 0.5A, I = -1.0A, IRR = -0.25A
A
= 25oC
I
R
150
uAmps
nSec
C
trr
150
250
500
F
R
2001-4
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts
3. Thermal Resistance Junction to Case.
4. Suffix “R” for Reverse Polarity.
(
)
RATING AND CHARACTERISTIC CURVES FR801 THRU FR806
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
300
8
8.3ms Single Half
Sine-Wave
(JEDED Method)
250
200
150
100
50
6
4
2
Single Phase Half Wave
60Hz Inductive or
Resistive Load
0
0
0
25
50
75 100 125 150 175
1
2
5
10
20
50
100
CASE TEMPERATURE, (oC)
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
20
10
10
6
4
2
3.0
1.0
1.0
T
= 25oC
J
.6
.4
Pulse Width=300uS
1% Duty Cycle
0.3
0.1
T
= 25
.2
.1
J
.06
.04
.03
.01
.02
.01
0.4
0.6 0.8 1.0
1.2 1.4 1.6
1.8
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
200
50
10
NONINDUCTIVE
trr
NONINDUCTIVE
+0.5A
100
60
( - )
D.U.T
0
40
( + )
PULSE
GENERATOR
(NOTE 2)
25 Vdc
(approx)
( - )
-0.25A
20
1
OSCILLOSCOPE
(NOTE 1)
( + )
10
6
NON-
INDUCTIVE
T
= 25oC
J
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
4
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
相关型号：
FR805
FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes)
RECTRON
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