FSM101 [RECTRON]
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere); 表面安装玻璃钝化快速恢复硅整流（电压范围50到1000伏特电流1.0安培）
| 型号： | FSM101 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FSM101
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FSM107
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* Fast switching
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.015 gram
MELF
MECHANICAL DATA
*
Epoxy : Device has UL flammability classification 94V-0
(
)
)
.205 5.2
SOLDERABLE
ENDS
(
.190 4.8
(
)
.028 .60
(
)
.018 .46
(
)
.106 2.7
(
)
.095 2.4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
RRM
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
Amps
RMS
Maximum DC Blocking Voltage
V
DC
O
100
1000
Maximum Average Forward Rectified Current at T
A
= 55oC
I
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
30
Amps
(Note 2) RθJL
(Note 3) RθJA
30
0C/W
0C/W
pF
Maximum Thermal Resistance
75
15
Typical Junction Capacitance (Note 1)
CJ
T
J
, TSTG
-65 to + 175
0 C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At T
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Full Load Reverse Current,Full cycle Average at T
A
= 25oC unless otherwise noted)
SYMBOL
FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 UNITS
1.3
50
Volts
V
F
o
A
= 55 C
uAmps
uAmps
= 25oC
5.0
I
R
@T
@T
A
A
Maximum Average Reverse Current at
Rated DC Blocking Voltage
= 125oC
100
uAmps
nSec
trr
150
250
500
Maximum Reverse Recovery Time (Note 4)
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2001-4
2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.
4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
(
)
RATING AND CHARACTERISTIC CURVES FSM101 THRU FSM107
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
1.0
.8
40
30
20
10
0
.6
.4
.2
0
Single Phase
Half Wave 60Hz
Resistive or
8.3ms Single Half Sine-Wave
(JEDED Method)
Inductive Load
0
25
50
75 100 125 150 175
1
2
4
6
8 10
NUMBER OF CYCLES AT 60Hz
20
40 6080100
AMBIENT TEMPERATURE, (
)
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
4
20
10
T
= 25
J
Pulse Width = 300us
1% Duty Cycle
T
= 100
J
1.0
.4
1.0
.1
.1
.04
T
= 25
J
.01
.01
0
20 40
60
80 100 120 140
.6
.8
1.0
1.2
1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
TIME CHARACTERISTIC
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
50
10
NONINDUCTIVE
NONINDUCTIVE
trr
60
40
+0.5A
(¡V)
PULSE
GENERATOR
(NOTE 2)
D.U.T
20
( + )
0
25 Vdc
(approx)
(¡V)
-0.25A
10
6
4
T
= 25
J
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
2
1
-1.0A
NOTES1: Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
1cm SET TIME BASE FOR
50/100 ns/cm
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
.1 .2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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