HER207G [RECTRON]
HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER; 高效率玻璃钝化整流
| 型号： | HER207G |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HER201G
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HER208G
HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Ampere
FEATURES
* Low power loss, high efficiency
* Low leakage
* Low forward voltage drop
* High current capability
* High speed switching
* High surge capability
* High reliability
DO-15
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
HER201G HER202G HER203G HER204G HER205G HER206G HER207G HER208G
UNITS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
100
200
300
400
600
800
1000 Volts
V
V
RRM
RMS
35
50
70
140
200
210
300
280
400
420
600
560
800
Volts
Volts
700
100
Maximum DC Blocking Voltage
V
DC
1000
Maximum Average Forward Rectified Current
2.0
60
I
O
Amps
Amps
at TA
= 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
20
pF
0 C
30
-55 to + 150
TJ, TSTG
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
HER201G HER202G HER203G HER204G HER205G HER206G HER207G HER208G
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 2.0A DC
SYMBOL
UNITS
Volts
VF
1.7
1.0
1.3
Maximum DC Reverse Current
5.0
uAmps
uAmps
at Rated DC Blocking Voltage TA
= 25oC
I
R
Maximum Full Load Reverse Current
100
Average, Full Cycle .375” (9.5mm) lead length at TL
= 55oC
Maximum Reverse Recovery Time (Note 1)
trr
50
75
nSec
NOTES : 1. Test Conditions: I
F
= 0.5A, IR = -1.0A, IRR = -0.25A
2003-1
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
(
)
RATING AND CHARACTERISTIC CURVES HER201G THRU HER208G
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
trr
NONINDUCTIVE
NON-INDUCTIVE
+0.5A
4.0
2.0
0
Single Phase
Half Wave 60Hz
Resistive or
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
0
( + )
25 Vdc
(approx)
( - )
Inductive Load
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
1cm
0
25 50 75 100125150175
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
NOTES:
SET TIME BASE FOR
10/20 ns/cm
AMBIENT TEMPERATURE (
)
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
100
10
T
T
= 150
= 100
J
1.0
.1
300/400V
J
50/100/200V
1.0
.1
600/800/1000V
T
= 25
J
T
= 25
J
.01
Pulse Width = 300uS
1% Duty Cycle
.01
.001
0
20
40
60
80
100
120 140
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
60
8.3ms Single Half Sine-Wave
(
)
JEDEC Method
50
40
30
20
40
HER201G~HER205G
HER206G~HER208G
20
10
6
T
= 25
J
4
10
0
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, ( V )
RECTRON
相关型号：
HER207G-BP
Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
HER207G-LF
Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
HER207G-T3-LF
Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
HER207G-TB-LF
Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
©2020 ICPDF网 联系我们和版权申明