HFM201V-W [RECTRON]
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| 型号： | HFM201V-W |
| 厂家： | 
RECTRON SEMICONDUCTOR |
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| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HFM201
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HFM208
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.098 gram
DO-214AA
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
(
)
0.083 2.11
(
)
)
0.155 3.94
(
)
0.077 1.96
(
0.130 3.30
(
)
0.180 4.57
(
)
0.160 4.06
(
)
0.012 0.305
(
)
0.006 0.152
(
)
)
)
0.096 2.44
(
0.084 2.13
(
0.060 1.52
(
)
)
0.008 0.203
(
)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.030 0.76
(
0.004 0.102
(
)
)
0.220 5.59
(
0.205 5.21
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
HFM201 HFM202 HFM203 HFM204 HFM205 HFM206 HFM207 HFM208
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
50
35
50
100
70
200
140
200
600
420
600
V
RRM
RMS
300
210
300
400
280
400
800
560
800
1000
700
Volts
Volts
Volts
V
Maximum DC Blocking Voltage
Maximum Average Forward Current
V
DC
100
1000
I
O
2.0
60
Amps
Amps
at TA
= 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
30
20
pF
0C
Operating and Storage Temperature Range
T
J
, TSTG
-65 to + 175
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
UNITS
Volts
CHARACTERISTICS
Maximum Forward Voltage at 2.0A DC
Maximum Full Load Reverse Current, Full cycle Average
SYMBOL
HFM201 HFM202 HFM203 HFM204 HFM205 HFM206 HFM207 HFM208
1.7
VF
1.0
1.3
50
TA
= 55oC
uAmps
Maximum DC Reverse Current at
Rated DC Blocking Voltage
@T
@T
A
= 25oC
5.0
uAmps
uAmps
I
R
A
= 125oC
100
Maximum Reverse Recovery Time (Note 1)
trr
50
75
nSec
NOTES : 1. Test Conditions: I
F
=0.5A, I
R=-1.0A, IRR=-0.25A.
2001-5
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
(
)
RATING AND CHARACTERISTIC CURVES HFM201 THRU HFM208
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
4.0
2.0
0
Single Phase
Half Wave 60Hz
Resistive or
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
0
( + )
25 Vdc
(approx)
( - )
Inductive Load
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
1cm
0
25 50 75 100125150175
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
NOTES:
SET TIME BASE FOR
10/20 ns/cm
AMBIENT TEMPERATURE (
)
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
100
10
T
T
= 150
= 100
1.0
.1
J
J
HFM204~HFM205
HFM206~HFM208
HFM201~HFM203
1.0
.1
T
= 25
J
T
= 25
J
.01
Pulse Width = 300uS
1% Duty Cycle
.001
.01
0
20
40
60
80
100
120 140
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
200
100
60
60
8.3ms Single Half Sine-Wave
(
)
JEDEC Method
50
40
30
20
40
HFM201~HFM205
HFM206~HFM208
20
10
6
T
= 25
J
4
10
0
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, ( V )
RECTRON
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