HFM303B [RECTRON]
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER;
| 型号： | HFM303B |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER 功效 |
| 文件： | 总7页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HFM301B
THRU
HFM308B
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.098 gram
(
)
)
0.083 2.11
(
)
)
0.155 3.94
(
0.077 1.96
(
0.130 3.30
MECHANICAL DATA
* Epoxy: Device has UL flammability classification 94V-O
(
)
)
0.180 4.57
(
0.160 4.06
(
)
)
0.012 0.305
(
0.006 0.152
(
)
)
)
0.096 2.44
(
0.084 2.13
(
0.060 1.52
(
)
)
0.008 0.203
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
resistive or inductive load.
(
)
0.030 0.76
(
0.004 0.102
(
)
)
0.220 5.59
(
0.205 5.21
Dimensions in inches and (millimeters)
O
MAXIMUM RATINGS (@ T
A
=25 C unless otherwise noted)
HFM307BHFM308B
SYMBOL HFM301B HFM302B HFM303BHFM304B HFM305B HFM306B
UNITS
Volts
Volts
Volts
RATINGS
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
800
560
800
1000
700
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
100
Maximum DC Blocking Voltage
1000
Maximum Average Forward Rectified Current
IO
3.0
Amps
O
at T = 105
C
L
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
I2t
200
150
Amps
Current Squarad Time
93.3
A2/Sec
165.9
0
Typical Thermal Resistance (Note 1)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
R
R
15
60
C/W
ꢀ
ꢀ
J L
J A
0
C/W
CJ
TJ
70
50
pF
0C
0C
-55 to + 150
-55 to + 150
Storage Temperature Range
TSTG
O
ELECTRICAL CHARACTERISTICS(@T
A
=25 C unless otherwise noted)
HFM301B HFM302B HFM303BHFM304B HFM305B HFM306B
HFM307BHFM308B
1.7
CHARACTERISTICS
SYMBOL
VF
UNITS
Volts
Maximum Instantaneous Forward Voltage at 3.0A DC
1.0
1.3
Maximum Full Load Reverse Current, Full
O
25
ꢁA
cycle Average T =55 C
A
IR
@TA = 25oC
@TA = 150oC
Maximum Average Reverse Current
at Rated DC Blocking Voltage
0.3
ꢁA
ꢁA
200
Maximum Reverse Recovery Time (Note 4)
50
75
nSec
trr
NOTES : 1. Thermal Resistance : Mounted on PCB.
2018-10
REV:A
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
3. “ ROHS compliant”
4. Test Conditions: I = 0.5A, I = -1.0A, I = -0.25A.
RR
F
R
RATINGANDCHARACTERISTICSCURVES(HFM301B THRU HFM308B)
trr
+0.5A
50
10
NONINDUCTIVE
NONINDUCTIVE
( - )
D.U.T
0
( + )
PULSE
25 Vdc
(approx)
( - )
GENERATOR
(NOTE 2)
-0.25A
1
( + )
OSCILLOSCOPE
(NOTE 1)
NON-
INDUCTIVE
NOTES: 1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
-1.0A
2. Rise Time = 10ns max. Source Impedance =
1cm
50 ohms.
SET TIME BASE FOR 50/100 ns/cm
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
1000
5
4
T
= 1 5 0OC
A
100
10
3
2
T
= 75 OC
= 25 OC
A
T
A
1.0
0.1
60Hz
1
0
Resistive
or Inductive Load
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
O
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
LEAD TEMPERATURE, ( C)
MAXIMUM
REVERSE
FIG.2 TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.3
CHARACTERISTICS
RATINGANDCHARACTERISTICSCURVES(HFM301B THRU HFM308B)
20
10
200
8.3ms Single Half Sine-Wave
(JEDED Method)
150
125
100
T
= 25 OC
J
3.0
1.0
HFM306B~HFM308B
50
HFM304B~HFM305B
0.3
0.1
30
20
HFM301B~HFM303B
HFM306B~HFM308B
0.03
0.01
Pulse Width=300uS
1% Duty Cycle
HFM301B~HFM305B
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
5
10
50
100
INSTANTANEOUS FORWARD VOLTAGE, (V)
NUMBER OF CYCLES AT 60Hz
MAXIMUM
FIG.4
INSTANTANEOUS FORWARD
FIG.5 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
CHARACTERISTICS
200
100
= 25 OC
HFM301B~HFM305B
T
J
60
40
HFM306B~HFM308B
20
10
6
4
2
1
0.1 0.2
0.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, (V)
FIG.6 TYPICAL JUNCTION CAPACITANCE
Mounting Pad Layout
0.185 MAX.
(4.69 MAX.)
0.121MIN.
(3.07MIN.)
0.060 MAX.
(1.52 MAX.)
0.320 REF
Dimensions in inches and (millimeters)
Marking Description
Rectron Logo
Part No.
3 H X
Voltage-code
1-------50V
5-------400V
6-------600V
7-------800V
8-------1000V
V Y W W
2-------100V
3-------200V
4-------300V
Cathode Band
Year – code
(Y:Last digit of year)
Week – code
(WW:01~52)
PACKAGING OF DIODE AND BRIDGE RECTIFIERS
REEL PACK
COMPONENT
SPACE
EA PER
INNER
BOX
PACKING
CODE
EA PER
REEL
REEL DIA CARTON SIZE EA PER
GROSS
TAPE SPACE
(mm)
PACKAGE
SMC
(mm)
(mm)
CARTON WEIGHT(Kg)
(mm)
-W/-T
3,000
3,000
---
330
360*355*360 24,000
11.50
---
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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