MCL4448 [RECTRON]
Micro- MELF SIGNAL DIODE; 微型MELF信号二极管
| 型号： | MCL4448 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Micro- MELF SIGNAL DIODE |
| 文件： | 总1页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RECTRON
SEMICONDUCTOR
MCL4448
TECHNICAL SPECIFICATION
1N4448 Micro-MELF SIGNAL DIODE
Absolute Maximum Ratings (Ta = 25°C)
Micro-MELF
Symbol Ratings
Unit
V
ITEMS
Peak Reverse Voltage VRM
100
4
Reverse Recovery
Time
trr
ns
Power Dissipation
P
500
mW
mA
Forward Current
Junction Temp.
Storage Temp.
IFM
Tj
500 *
0.049(1.25)
0.047(1.20)
(-65 to 175) °C
Tstg (-65 to 175) °C
Mechanical Data
Items
0.008(0.2)
Materials
Package
Case
Micro MELF
0.079(2.0)
0.071(1.8)
Units in mm
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
Lead/Finish
Chip
Ratings
Symbol
Ratings
100
Unit
V
Non-Repetive Peak Reverse Voltage
VRM
BV
75
1 *
V
A
Minimum Breakdown Voltage @IR= 100mA
Peak Forward Surge Current @ t = 1.0s
IFSM
IFM
Forward Continuous Current
500 *
1
mA
V
Maximum Forward Voltage IF= 100mA
Maximum Reverse Current
VR= 20V
VF
25
5
nA
IR
A
µ
VR= 75V
A
µ
30
VR= 20V, Tj= 150 °C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Cj
trr
4
pF
Maximum Reverse Recovery Time
4
ns
I = 10mA, V = 6V, I = -1mA, R = 100
Ω
F
R
R
L
Maximum Thermal Resistance
300
K / W
Rθ
JA
* Note: Device terminals at ambient temperature
相关型号：
MCL4448-GS08
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, MICROMELF-2
VISHAY
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