MD2S [RECTRON]
SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere); 单相玻璃钝化MINI硅表面贴装桥式整流器（电压范围50到1000伏特电流0.5安培）
| 型号： | MD2S |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere) |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MD1S
THRU
MD7S
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SINGLE-PHASE GLASS PASSIVATED
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere
FEATURES
* Surge overload rating - 30 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
MD-S
* Weight: 0.5 gram
MECHANICAL DATA
1
2
3
4
*
Epoxy : Device has UL flammability classification 94V-0
M D
* UL listed the recognized component directory, file #E94233
.004(0.10) MAX.
0.028(0.9)
0.020(0.5)
0.108(2.74)
0.092(2.34)
0.193(4.9)
0.177(4.5)
0.106(2.7)
0.091(2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.014(0.35)
0.006(0.15)
0.193(4.9)
0.177(4.5)
Dimensions in millimeters
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
MD1S
50
MD2S
100
MD3S
200
MD4S
400
MD5S
600
MD6S
800
MD7S UNITS
V
RRM
RMS
1000
700
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
V
35
70
140
280
420
560
V
DC
100
200
400
600
800
1000
Maximum DC Blocking Voltage
50
Maximum Average Forward Output Rectified
= 30oC
- on glass-epoxy P.C.B. ( NOTE 1 )
Amp
0.5
0.8
Current at
T
A
I
O
- on aluminum substrate ( NOTE 2 )
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
30
Amps
0 C
Operating and Storage Temperature Range
T
J,
T
STG
-55 to + 150
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
MD1S
MD2S
MD3S
MD4S
1.05
MD5S
MD6S
MD7S UNITS
Volts
Maximum Forward Voltage Drop per Bridge
Element at 0.5A DC
V
F
uAmps
Maximum Reverse Current at rated
DC Blocking Voltage per element
@T
@T
A
A
= 25oC
= 125oC
10
I
R
0.5
mAmps
2001-4
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads.
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad.
3. Suffix “-S” Surface Mount for Mini Dip Bridge.
(
)
RATING AND CHARACTERISTIC CURVES MD1S THRU MD7S
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
POWER DISSIPATION
2
1
2.4
sine wave
pulse test
Tj=1500C
per one diode
2
1.6
1.2
0.8
0.4
=1500C
(TYP)
0.5
T
L
TL
=250C
(TYP)
0.2
0.1
0
0.05
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
1.2
INSTANTANEOUS FORWARD VOLTAGE, (V)
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT
DERATING CURVE
SURGE FORWARD CURRENT CAPABILITY
sine wave
35
30
1.4
sine wave
R-load
1.2
0
free in air
8.3ms 8.3ms
1 cycle
25
20
1.0
0.8
0.6
non-repetitive
Tj=250C
on aluminum
substrate
15
10
5
0.4
0.2
on glass
-epoxy substrate
0
0
0
40
80
120
160
1
2
5
10
20
50
100
AMBIENT TEMPERATURE, (oC )
NUMBER OF CYCLE
RECTRON
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