MMST3904 [RECTRON]
SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (NPN); SOT- 323双极晶体管晶体管（ NPN ）
| 型号： | MMST3904 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (NPN) |
| 文件： | 总2页 (文件大小：614K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RECTRON
TECHNICAL SPECIFICATION
SEMICONDUCTOR
MMST3904
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
FEATURES
Power dissipation
*
*
*
*
Pcm: 0.2 W (Tamb=25OC)
Collector current
Icm: 0.2 A
Collector-base voltage
V(BR)CBO: 60 V
SOT-323
Operationg and storage junction temperature range
TJ,Tstg: -55OCto +150OC
MECHANICAL DATA
* Case: Molded plastic
0.051(1.30)
0.047(1.20)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
REF .040(1.01)
* Weight: 0.006 gram
0.092(2.35)
0.089(2.25)
0.012(0.30)
0.052(1.33)
0.050(1.27)
0.081(2.05)
0.077(1.95)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1)
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
VALUE
UNITS
-
-
-
200
PD
mW
oC
150
TJ
TSTG
oC
-55 to +150
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient (1)
Max. Instantaneous Forward Voltage at IF= 10mA
SYMBOL
MIN.
TYP.
MAX.
625
-
UNITS
oC/W
Volts
R θJA
-
-
-
-
VF
NOTES : 1.Valid provided that terminals are kept at ambient temperature.
2006-3
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (2)
Collector-Emitter Breakdown Voltage (I = 1.0mAdc, I = 0)
V
40
-
Vdc
C
B
(BR)CEO
Collector-Base Breakdown Voltage (I = 10µAdc, I = 0)
V
V
60
5.0
-
-
Vdc
Vdc
C
E
(BR)CBO
(BR)EBO
Emitter-Base Breakdown Voltage (I = 10µAdc, I = 0)
-
E
C
I
Collector Cutoff Current (V
Collector Cutoff Current (V
Emitter Cutoff Current (V
= 40Vdc,I =0)
B
0.1
0.1
nAdc
µAdc
µAdc
nAdc
CEO
CE
CB
I
-
= 60Vdc, I = 0)
E
CBO
I
= 5Vdc, I = 0)
C
-
-
0.1
50
EBO
EB
I
Base Cutoff Current (V
= 60Vdc, V
EB(off)
= 3.0Vdc
BL
CE
ON CHARACTERISTICS (2)
40
70
-
DC Current Gain (I = 100µAdc, V
= 1.0Vdc)
C
CE
CE
(I = 1.0mAdc, V
C
= 1.0Vdc)
-
(I = 10mAdc, V
= 1.0Vdc)
= 1.0Vdc)
= 1.0Vdc)
hFE
100
60
300
-
-
C
CE
(I = 50mAdc, V
C
CE
(I = 100mAdc, V
30
-
C
CE
0.25
0.30
0.85
0.95
Collector-Emitter Saturation Voltage (I = 10mAdc, I = 1.0mAdc)
-
-
C
B
V
Vdc
Vdc
CE(sat)
BE(sat)
(I = 50mAdc, I = 5.0mAdc)
C
B
Base-Emitter Saturation Voltage (I = 10mAdc, I = 1.0mAdc)
0.65
-
C
B
V
(I = 50mAdc, I = 5.0mAdc)
C
B
SMALL-SIGNAL CHARACTERISTICS
f
Current-Gain-Bandwidth Product (3) (I = 10mAdc, V
= 20Vdc, f= 100MHz)
250
-
-
MHz
pF
T
C
CE
C
Output Capacitance (V
Input Capacitance (V
=0.5Vdc, I = 0, f= 1.0MHz)
4.0
8.0
10
obo
CE
C
C
=0.5Vdc, I = 0, f= 1.0MHz)
-
pF
ibo
EB
C
h
Input Impedance (I = 1.0mAdc, V
=10Vdc, f=1.0kHz)
1.0
0.5
100
1.0
-
kΩ
C
ie
CE
-
4
h
Voltage Feedback Ratio (I = 1.0mAdc, V
= 10Vdc, f= 1.0kHz)
8.0
400
40
re
X 10
-
C
CE
h
Small-Signal Current Gain (I = 1.0mAdc, V
= 10Vdc, f= 1.0kHz)
fe
C
CE
h
Output Admittance (I = 10mAdc, V
= 10Vdc, f= 1.0kHz)
µs
oe
C
CE
Noise Figure (I = 100µAdc, V
= 5.0Vdc, R = 1.0k
Ω
, f= 1.0kHz)
NF
5.0
dB
C
CE
S
SWITCHING CHARACTERISTICS
Delay Time
t
-
-
-
35
35
d
(V
= 3Vdc, V
= 0.5Vdc, I = 10mAdc, I = 1mAdc)
B1
ns
ns
CC
BE
C
Rise Time
t
r
Storage Time
t
200
s
(V
= 3Vdc, I = 10mAdc, I = I = 1mAdc)
B1 B2
CC
C
Fall Time
t
f
-
50
<
<
-
NOTES : 2. Pulse Test: Pulse Width 300µs,Duty Cycle 2.0%
-
RECTRON
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