P6FMBJ24A-T [RECTRON]

Trans Voltage Suppressor Diode,;
P6FMBJ24A-T
型号: P6FMBJ24A-T
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

Trans Voltage Suppressor Diode,

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TVS  
RECTRON  
TECHNICAL SPECIFICATION  
P6FMBJ  
SERIES  
SEMICONDUCTOR  
GPP TRANSIENT VOLTAGE SUPPRESSOR  
600 WATT PEAK POWER 1.0 WATT STEADY STATE  
FEATURES  
* Plastic package has underwriters laboratory  
* Glass passivated chip construction  
* 600 watt surage capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
DO-214AA  
* Fast response time  
Ratings at 25 oC ambient temperature unless otherwise specified.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Dimensions in inches and (millimeters)  
DEVICES FOR BIPOLAR APPLICATIONS  
For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400  
Electrical characteristics apply in both direction  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
SYMBOL  
VALUE  
UNITS  
Watts  
RATINGS  
P
PPM  
Minimum 600  
Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1)  
Peak Pulse Durrent with a 10/1000uS waveform  
( Note 1, Fig.3 )  
I
PPM  
SEE TABLE 1  
Amps  
Amps  
Amps  
Steady State Power Dissipation at T  
L
= 75oC ( Note 2 )  
P
M
(
AV  
)
5.0  
Peak Forward Surge Current, 8.3mS single half sine wave super-  
imposed on rated load (Jedec Method)(Note 3,2) unidirectional only  
I
FSM  
100  
Maximum Instantaneous Forward Voltage at 50A for  
unidirectional only ( Note 3,4 )  
V
F
SEE NOTE 4  
-55 to + 150  
Volts  
0 C  
T
J
, TSTG  
Operating and Storage Temperature Range  
1998-8  
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T  
A
= 25oC per Fig.2.  
2. Mounted on 0.2 X 0.2” ( 5.0 X 5.0mm ) copper pad to each terminal.  
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.  
4. V = 3.5V on P6FMBJ6.8 thru P6FMB90 devices and V = 5.0V on P6FMBJ100 thur P6FMBJ400 devices.  
Back  
F
F
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