P6FMBJ56V-W [RECTRON]
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| 型号： | P6FMBJ56V-W |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | 暂无描述 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TVS
RECTRON
TECHNICAL SPECIFICATION
P6FMBJ
SERIES
SEMICONDUCTOR
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 600 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
DO-214AA
* Fast response time
Ratings at 25 oC ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400
Electrical characteristics apply in both direction
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
SYMBOL
VALUE
UNITS
Watts
RATINGS
P
PPM
Minimum 600
Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1)
Peak Pulse Durrent with a 10/1000uS waveform
( Note 1, Fig.3 )
I
PPM
SEE TABLE 1
Amps
Amps
Amps
Steady State Power Dissipation at T
L
= 75oC ( Note 2 )
P
M
(
AV
)
5.0
Peak Forward Surge Current, 8.3mS single half sine wave super-
imposed on rated load (Jedec Method)(Note 3,2) unidirectional only
I
FSM
100
Maximum Instantaneous Forward Voltage at 50A for
unidirectional only ( Note 3,4 )
V
F
SEE NOTE 4
-55 to + 150
Volts
0 C
T
J
, TSTG
Operating and Storage Temperature Range
1998-8
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25oC per Fig.2.
2. Mounted on 0.2 X 0.2” ( 5.0 X 5.0mm ) copper pad to each terminal.
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
4. V = 3.5V on P6FMBJ6.8 thru P6FMB90 devices and V = 5.0V on P6FMBJ100 thur P6FMBJ400 devices.
Back
F
F
RECTRON
RECTRON
RECTRON
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