PN2222A [RECTRON]
TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN); TO - 92双极晶体管晶体管（ NPN ）
| 型号： | PN2222A |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) |
| 文件： | 总5页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PN2222A
TO - 92BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
0.14 (3.6)
0.18 (4.6)
FEATURES
* Power dissipation
PCM:
625mW(Tamb=25OC)
Collector current
*
*
*
ICM:
0.6
Collector-base voltage
75 V
A
V
:
(BR)CBO
Operating and storage junction temperature range
T ,Tstg: -55OC to+150OC
J
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
max.
0.022 (0.55)
0.098 (2.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches
and (millimeters)
(TO-92)
Bottom
MAXIMUM RATINGES ( @ TA = 25OC unless otherwise noted)
RATINGS
(1)
SYMBOL
PD
VALUE
625
UNITS
mW
oC
o
O
Max. Steady State Power Dissipation
Max. Operating Temperature Range
Storage Temperature Range
@TA=25 C Derate above 25 C
150
TJ
TSTG
oC
-55 to +150
ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted)
CHARACTERISTICS
SYMBOL
MIN.
-
TYP.
-
MAX.
200
UNITS
oC/W
Thermal Resistance Junction to Ambient
R θJA
Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina
2011-2
2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I = 10mAdc, I = 0)
V
40
-
Vdc
C
B
(BR)CEO
Collector-Base Breakdown Voltage (I = 10u Adc, I = 0)
V
V
75
-
Vdc
Vdc
C
E
(BR)CBO
(BR)EBO
Emitter-Base Breakdown Voltage (I = 10u Adc, I = 0)
6.0
-
E
C
I
Collector Cutoff Current (V
Collector Cutoff Current (V
(V
= 60Vdc,V
= 3.0Vdc
EB(off)
-
-
-
-
-
0.01
0.01
10
uAdc
CEX
CE
CB
CB
= 60Vdc, I = 0)
E
I
uAdc
CBO
= 60Vdc, I = 0, TA= 150OC)
E
I
Emitter Cutoff Current (V
= 3.0Vdc, I = 0)
0.01
20
uAdc
nAdc
EBO
EB
C
I
Base Cutoff Current (V
= 60Vdc, V
= 3.0Vdc
BL
CE
EB(off)
ON CHARACTERISTICS
= 10Vdc, TA= -55OC)
= 10Vdc) (1)
CE
35
40
-
DC Current Gain (I = 10mAdc, V
C
CE
hFE
-
(I = 500mAdc, V
-
C
0.3
1.0
1.2
2.0
Collector-Emitter Saturation Voltage (1) (I = 150mAdc, I = 15mAdc)
-
-
C
B
V
Vdc
Vdc
CE(sat)
BE(sat)
(I = 500mAdc, I = 50mAdc)
C
B
Base-Emitter Saturation Voltage (1) (I = 150mAdc, I = 15mAdc)
0.6
-
C
B
V
(I = 500mAdc, I = 50mAdc)
C
B
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (2) (I = 20mAdc, V
C
= 20Vdc, f= 100MHz)
f
300
-
-
MHz
pF
CE
T
Input Capacitance (V
=0.5Vdc, I = 0, f= 1.0MHz)
C
25
EB
C
ibo
Input Impedance (I = 1.0mAdc, V
C
=10Vdc, f=1.0kHz)
2.0
0.25
-
8.0
1.25
8.0
4.0
300
375
35
CE
=10Vdc, f=1.0kHz)
CE
k
ohms
h
ie
(I = 10mAdc, V
C
Voltage Feedback Ratio (I = 1.0mAdc, V
C
= 10Vdc, f= 1.0kHz)
CE
-
X 10
4
h
re
(I = 10mAdc, V
=10Vdc, f= 1.0kHz)
CE
-
C
50
75
5.0
25
-
Small-Signal Current Gain (I = 1.0mAdc, V
C
= 10Vdc, f= 1.0kHz)
CE
h
-
fe
(I = 10mAdc, V
= 10Vdc, f= 1.0kHz)
C
CE
Output Admittance (I = 1.0mAdc, V
C
= 10Vdc, f= 1.0kHz)
CE
h
umhos
oe
(I = 10mAdc, V
= 10Vdc, f= 1.0kHz)
CE
200
150
4.0
C
Collector Base Time Constant (I = 20mAdc, V
= 20Vdc, f= 31.8MHz)
rb,Cc
NF
ps
E
CB
Noise Figure (I = 100u Adc, V
= 10Vdc, R = 1.0kohms
-
dB
, f= 1.0kHz)
C
CE
S
SWITCHING CHARACTERISTICS
Delay Time
t
-
-
-
10
25
d
(V
= 30Vdc, V
= -0.5Vdc, I = 150mAdc, I = 15mAdc)
ns
ns
CC
BE(off)
C
B1
Rise Time
t
r
Storage Time
t
225
s
(V
= 30Vdc, I = 150mAdc, I = I = 15mAdc)
B1 B2
CC
C
Fall Time
t
f
-
60
<
<
-
NOTES : 1. Pulse Test: Pulse Width 300ms,Duty Cycle 2.0%
-
2. f is defined as the frequency at which |h | extrapolates to unity
T
fe
RATING AND CHARACTERISTICS CURVES ( PN2222A )
1000
700
500
300
200
100
70
50
30
20
10
01
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20
30
50 70
100
200 300 500 700
1.0k
I
,CCLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
I
,BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
200
500
IC/IB=10
VCC=30V
IC/IB=10
TJ=25OC
300
100
t' =t -1/8t
s
IB1=IB2
s
f
70
50
200
100
TJ=25OC
tr@VCC=30V
td@VEB(off)=2.0V
td@VEB(off)=0
30
20
t
f
70
50
30
10
20
7.0
5.0
10
3.0
7.0
5.0
2.0
5.0 7.0
10
20 30
50 70 100
200 300
500
5.0 7.0
10
20 30
50 70
100
200 300 500
I
,CLLECTOR CURRENT (mA)
I ,CLLECTOR CURRENT (mA)
C
C
Figure 3.Turn-On Time
Figure 4.Turn-Off Time
RATING AND CHARACTERISTICS CURVES ( PN2222A )
10
10
R
=OPTIMUM
SOURCE
S
f=1.0KHz
RESISTANCE
I
=1.0mA,R =150Ω
S
C
8.0
6.0
8.0
6.0
500uA,R =200Ω
100uA,R =2.0KΩ
50uA,R =4.0KΩ
S
S
S
I
=
50uA
C
100uA
500uA
1.0mA
4.0
2.0
4.0
2.0
0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (KHz)
50 100
50 100 200
500
1.0k 2.0k
5.0k
10k 20k 50k 100k
R
,SOURCE RESISTANCE (OHMS)
S
Figure 5.Frequency Effects
Figure 6.Source Resistance Effects
30
20
500
V
T
=20V
CE
J
=25OC
C
eb
300
200
10
7.0
5.0
100
CC
b
3.0
2.0
70
50
0.1 0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
2.0 3.0
I
5.0 7.0
10
20 30
50
70 100
REVERSE VOLTAGE (VOLTS)
, COLLECTOR CURRENT (mA)
C
Figure 7.Capacitances
Figure 8.Currunt-Gain Bandwidth Product
1.0
0.8
0.6
+0.5
T
V
=25OC
J
0
R
for V
CE(sat)
θVC
(sat)@I /I =10
BE
BE
C B
-0.5
1.0V
-1.0
-1.5
V
(on)@V =10V
CE
0.4
0.2
0
-2.0
-2.5
R
for V
BE
θ
VB
V
(sat)@I /I =10
CE
C B
0.1 0.2 0.5
1.0 2.0 5.0 10 20 50 100 200 500 1.0k
, COLLECTOR CURRENT (mA)
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200 500
I
I
C
, COLLECTOR CURRENT (mA)
C
Figure 9."On" Voltages
Figure 10.Temperature Coefficients
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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