R2000U02 [RECTRON]

Rectifier Diode, 1 Element, 0.2A, 2000V V(RRM), Silicon, DO-41;
R2000U02
元器件型号: R2000U02
生产厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述和应用:

Rectifier Diode, 1 Element, 0.2A, 2000V V(RRM), Silicon, DO-41

二极管
PDF文件: 总1页 (文件大小:40K)
下载文档:  下载PDF数据表文档文件
型号参数:R2000U02参数

R2000U06

Rectifier Diode, 1 Element, 0.2A, 2000V V(RRM), Silicon, DO-41

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0 RECTRON

R2005200P12

GaAs Reverse, 5 - 200MHz, 20.0dB typ. Gain @ 200MHz, 360mA max. @ 12VDC

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57 PDI

R2005240

Si Reverse, 5 - 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC

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46 PDI

R2005240P12

GaAs Reverse, 5 - 200MHz, 24.2dB typ. Gain @ 200MHz, 360mA max. @ 12VDC

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32 PDI

R2005280L

Si Reverse, low current, 5 - 200MHz, 28.2dB typ. Gain @ 200MHz, 135mA max. @ 24VDC

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50 PDI

R2005300L

Si Reverse, low current, 5 - 200MHz, 30.0dB typ. Gain @ 200MHz, 140mA max. @ 24VDC

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30 PDI

R2005350L

Si Reverse, low current, 5 - 200MHz, 35.2dB typ. Gain @ 200MHz, 140mA max. @ 24VDC

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44 PDI

R200A

Optoelectronic

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67 ETC

R200B

Optoelectronic

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15 ETC

R200CH12C2H5

Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12C2H5

Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12CE5

Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12CE5

Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12D2H9

Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12D2H9

Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200AC

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0 IXYS