RL1N1600F-B [RECTRON]
Rectifier Diode, 1 Element, 0.5A, 1600V V(RRM), Silicon, PLASTIC, A-405, 2 PIN;
| 型号： | RL1N1600F-B |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 0.5A, 1600V V(RRM), Silicon, PLASTIC, A-405, 2 PIN 闪光灯 |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RL1N1000F
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RL1N1800F
PHOTOFLASH RECTIFIER
VOLTAGE RANGE 1000 to 1800 Volts CURRENT 0.5 Ampere
FEATURES
* High reliability
* Low leakage
* Low forward voltage drop
* High current capability
A-405
MECHANICAL DATA
* Case: Molded plastic
(
)
.025 0.6
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
DIA.
(
)
.021 0.5
(
)
1.0 25.4
MIN.
* Weight: 0.20 gram
(
)
.205 5.2
(
)
.166 4.2
(
)
.107 2.7
DIA.
(
)
.080 2.0
(
)
1.0 25.4
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
RL1N1000F RL1N1200F RL1N1400F RL1N1600F RL1N1800F
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
RRM
RMS
1000
700
1200
840
1400
980
1600
1120
1600
1800
1260
1800
Volts
Volts
Volts
V
DC
O
1000
1200
1400
Maximum DC Blocking Voltage
Maximum Average Forward Current
I
500
25
Amps
Amps
at TA
= 55oC
Peak Forward Surge Current IFM (surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
10
pF
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-65 to + 175
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 0.5A DC
Maximum DC Reverse Current
SYMBOL
RL1N1000F RL1N1200F RL1N1400F RL1N1600F RL1N1800F
1.8
UNITS
Volts
V
F
5.0
uAmps
at Rated DC Blocking Voltage T
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
= 55oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I = 0.5A, I = -1.0A, IRR = -0.25A
2. Measured at 1 MH and applied reverse voltage of 4.0 volts
A
= 25oC
I
R
100
300
uAmps
nSec
L
trr
F
R
2001-6
Z
(
)
RATING AND CHARACTERISTIC CURVES RL1N1000F THRU RL1N1800F
FIG. 1 - FORWARD CURRENT
DERATING CURVE
FIG. 2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1.0
.8
.6
.4
.2
.1
600
500
400
300
200
100
.06
.04
Single Phase
Half Wave 60Hz
Resistive or
T =25
J
Pulse Width = 300uS
1% Duty Cycle
.02
.01
Inductive Load
25
50
75 100 125 150 175
.8
.9
1.0
1.1
1.2
1.3
AMBIENT TEMPERATURE (
)
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
FIG. 3 - MAXIMUM NON-REPETITIVE SURGE CURRENT
40
200
100
60
40
30
8.3ms Single Half Sine-Wave
20
(JEDEC Method)
20
10
6
T
= 25
J
10
0
4
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
1
2
4
6
10 20 40 60 100
REVERSE VOLTAGE, ( V )
NUMBER OF CYCLES AT 60Hz
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
trr
NONINDUCTIVE
+0.5A
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
( + )
0
25 Vdc
(approx)
( - )
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
NOTES:
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
RECTRON
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