RL1N4004G-N [RECTRON]
暂无描述;型号: | RL1N4004G-N |
厂家: | RECTRON SEMICONDUCTOR |
描述: | 暂无描述 整流二极管 |
文件: | 总2页 (文件大小:26K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RL1N4001
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RL1N4007
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* High reliability
* Low leakage
* Low forward voltage drop
* High current capability
A-405
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
(
)
)
.025 0.6
DIA.
(
.021 0.5
(
)
1.0 25.4
MIN.
* Weight: 0.20 gram
(
)
.205 5.2
(
)
.166 4.2
(
)
.107 2.7
DIA.
(
)
.080 2.0
(
)
1.0 25.4
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
RL1N4001 RL1N4002 RL1N4003 RL1N4004 RL1N4005 RL1N4006 RL1N4007 UNITS
V
V
RRM
RMS
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Maximum DC Blocking Voltage
V
DC
O
100
1000
Maximum Average Forward Rectified Current
I
1.0
Amps
Amps
at TA
= 55oC
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
30
15
Typical Junction Capacitance (Note)
Typical Thermal Resistance
CJ
pF
0C/ W
0 C
R θ J A
, TSTG
50
T
J
-65 to + 175
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
SYMBOL
RL1N4001 RL1N4002 RL1N4003 RL1N4004 RL1N4005 RL1N4006 RL1N4007 UNITS
CHARACTERISTICS
1.1
5.0
50
Volts
V
F
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
@T
A
A
= 25oC
= 100oC
uAmps
I
R
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
= 75oC
NOTES : Measured at 1 MH and applied reverse voltage of 4.0 volts
30
uAmps
2001-5
L
Z
(
)
RATING AND CHARACTERISTIC CURVES RL1N4001 THRU RL1N4007
FIG. 2 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
1.0
.8
20
10
4
2
1.0
.6
.4
.2
.1
.4
.2
0
T
= 25
J
Single Phase
Half Wave 60Hz
Resistive or
Pulse Width=300uS
1% Duty Cycle
.04
Inductive Load
.02
.01
.6
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE, (
.8
1.0
1.2
1.4 1.5
)
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
50
10
4
8.3ms Single Half Sine-Wave
(JEDED Method)
40
T
= 100
J
1.0
.4
30
20
10
.1
.04
T
= 25
J
.01
0
6
1
2
4
8 10 20 40 6080100
0
20
40
60
80 100 120 140
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
200
100
60
T
= 25
J
40
20
10
6
4
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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