RL803S-T [RECTRON]
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3;
| 型号： | RL803S-T |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3 二极管 |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RL801S
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RL806S
GLASS PASSIVATED SILICON RECTIFIER
VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes
FEATURES
* Low Ieakage
* Low forward voltage drop
* High current capability
* High surge capability
* High reliability
D2PAK
MECHANICAL DATA
.185 (4.70)
* Case: D2PAK molded plastic
.177 (4.50)
.051 (1.29)
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
.049 (1.25)
* Weight: 2.2 grams
* Polarity: As marked
.052 (1.32)
.048 (1.22)
.032 (0.81)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.200 (5.08)
.401 (10.19)
.399 (10.13)
.015 (0.381)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
RL801S RL802S RL803S RL804S RL805S RL806S
UNITS
Volts
V
V
RRM
RMS
50
35
100
70
200
140
400
280
600
420
800
560
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Volts
V
DC
50
100
200
400
600
800
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
T
I
O
8.0
Amps
C
= 100oC (Note 1)
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
200
Amps
Typical Thermal Resistance
R θ J C
3.6
40
0C/ W
pF
CJ
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
T
J
, TSTG
-65 to + 150
0 C
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
RL801S RL802S RL803S RL804S RL805S RL8506S
UNITS
Volts
Maximum Instantaneous Forward Voltage at 8.0A DC
Maximum DC Reverse Current
V
F
1.1
10
@T
C
C
= 25oC
= 100oC
uAmps
I
R
at Rated DC Blocking Voltage
@T
1.Case Temperature Measured at Metal Tab.
2.Measured at 1 MH and applied reverse voltage of 4.0 volts.
3.Suffix “ R “ = Common Anode.
100
2002-6
NOTES :
Z
(
)
RATING AND CHARACTERISTIC CURVES RL801S THRU RL806S
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
FIG. 2 - TYPICAL REVERSE
CHARACTERISTICS
10
8
1000
100
T
= 100
C
6
4
2
0
Single Phase Half Wave
60Hz Inductive or
Resistive Load
0
50
100
150
10
CASE TEMPERATURE, (
)
T
= 25
C
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
1.0
300
8.3ms Single Half Sine-Wave
(JEDED Method)
250
200
0.1
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
150
100
50
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
200
40
20
10
100
60
40
4
2
20
10
6
T
= 25
J
1.0
4
.4
.2
.1
TJ=25
Pulse Width = 300uS
1% Duty Cycle
2
1
.6
.7
.8
.9 1.0 1.1 1.2 1.3
.1
.2 .4
1.0
2
4
10
20 40
100
REVERSE VOLTAGE, ( V )
INSTANTANEOUS FORWARD VOLTAGE, (V)
RECTRON
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