RM123V [RECTRON]
Small Signal Field-Effect Transistor,;
| 型号： | RM123V |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：689K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RM123
N-Channel Enhancement Mode Power MOSFET
General Features
VDS = 100V,ID = 0.17A
R
4
DS(ON) < 6.0Ω @ VGS=4.5V
=4.5V
RDS(ON) < 5.0Ω @ VGS=10V
Lead free product is acquired
Surface mount package
Schematic diagram
Application
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids, lamps, hammers , display,
memories, transistors, etc.
SA
Battery operated systems
Solid-state relays
Marking and pin assignment
Halogen-free
P/N suffix V means AEC-Q101 qualified, e.g:RM123V
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
-23
Reel Size
Tape width
Quantity
SA
RM123
Ø180mm
8 mm
3000 units
SOT
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Parameter
Symbol
VDS
Limit
100
Unit
V
Drain-Source Voltage
Gate-Source Voltage
20
V
VGS
Drain Current-Continuous
Drain Current-Pulsed(Note 1)
0.17
A
ID
IDM
0.68
A
Maximum Power Dissipation
0.225
-55 To 150
W
PD
TJ,TSTG
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
556
/W
Electrical Characteristics (TA=25 unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
-
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
V
GS=0V I
100
-
D =250ꢀA
-
-
V
μ
A
VDS=100V,VGS=0V
15
2020-03/74
REV:O
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
IGSS
VGS= 20V,V
DS =0V
nA
-
50
-
VGS(th)
RDS(ON)
gFS
VDS=VGS,I =1.0m
A
0.8
-
-
2.0
V
D
VGS=4.5V, ID=0.17A
ꢁ
3.5
3.2
6.0
5.0
-
Drain-Source On-State Resistance
VGS=10V, ID
=0.17A
ꢁ
-
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
VDS=25V,ID=0.1A
80
-
mS
Clss
Coss
Crss
20
9.0
4.0
PF
PF
PF
-
-
-
-
-
-
VDS=25V,VGS=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
20
-
nS
nS
nS
nS
-
-
-
-
-
Turn-on Rise Time
VDD=30V,Ic =0.28A
-
-
-
ꢁ
VGS=10V,RGEN=50
Turn-Off Delay Time
40
-
Turn-Off Fall Time
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=0.34A
-
-
1.3
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ꢂ 10 sec.
3. Pulse Test: Pulse Width ꢂ 300ꢀs, Duty Cycle ꢂ 2%.
4. Guaranteed by design, not subject to production
(RM123)
RATING AND CHARACTERISTICS CURVES
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
V
= 10 V
T = 25°C
DS
A
25°C
-ā55°C
0.8
0.6
0.4
0.2
V
= 10 V
9 V
GS
125°C
8 V
7 V
6 V
5 V
4 V
3 V
0
1.0 2.0 3.0 4.0
5.0
6.0 7.0 8.0
9.0 10
0
1.0 2.0 3.0 4.0
5.0
6.0 7.0 8.0
9.0 10
V , DRAN SOURCE VOLTAGE (VOLTS)
DS
V , GATE SOURCE VOLTAGE (VOLTS)
GS
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
V
= V
DS GS
= 1.0 mA
V
I
= 10 V
GS
= 200 mA
I
D
D
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-ā60
-ā20
+ā20
+ā60
+ā100
+ā140
-ā60
-ā20
+ā20
+ā60
+ā100
+ā140
T, TEMPERATURE (°C)
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
SOT-23 Package Information
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.100
1.050
0.500
c
0.150
D
3.000
E
1.400
E1
e
2.550
0.950TYP
2.000
e1
L
1.800
0.550REF
0.500
L1
ꢃ
0.300
0°
8°
Notes
1. All dimensions are in millimeters.
2. Tolerance 0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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